-Implanted carbon is known to suppress transient enhanced diffusion of dopant species like boron or phosphorus in the annealing step \cite{cowern96} which can be exploited to create shallow p-n junctions in submicron technologies.
-Si self-interstitials (Si$_{\text{i}}$), known as the transport vehicles for dopants \cite{fahey89,stolk95}, get trapped by reacting with the carbon atoms \cite{stolk97}.
-Furthermore, carbon incorporated in silicon is being used to fabricate strained silicon \cite{strane94,strane96,osten99} utilized in semiconductor industry for increased charge carrier mobilities in silicon \cite{chang05,osten97} as well as to adjust its band gap \cite{soref91,kasper91}.
+Implanted carbon is known to suppress transient enhanced diffusion of dopant species like boron or phosphorus in the annealing step~\cite{cowern96}, which can be exploited to create shallow p-n junctions in submicron technologies.
+Si self-interstitials (Si$_{\text{i}}$), known as the transport vehicles for dopants~\cite{fahey89,stolk95}, get trapped by reacting with the carbon atoms~\cite{stolk97}.
+Furthermore, carbon incorporated in silicon is being used to fabricate strained silicon~\cite{strane94,strane96,osten99} utilized in semiconductor industry for increased charge carrier mobilities in silicon~\cite{chang05,osten97} as well as to adjust its band gap~\cite{soref91,kasper91}.