-In chapter \ref{chapter:sic_rev} a review of the Si/C compound is given including the very central discussion on two controversial precipitation mechanisms present in literature in section \ref{section:assumed_prec}.
-Chapter \ref{chapter:basics} introduces some basics and internals of the utilized atomistic simulations as well as special methods of application.
-Details of the simulation and associated test calculations are presented in chapter \ref{chapter:simulation}.
-In chapter \ref{chapter:defects} results of investigations of single defect configurations, structures of combinations of two individual defects as well as some selected diffusion pathways in silicon are shown.
+In chapter~\ref{chapter:sic_rev}, a review of the Si/C compound is given, including the very central discussion on two controversial precipitation mechanisms present in literature in section~\ref{section:assumed_prec}.
+Chapter~\ref{chapter:basics} introduces some basics and internals of the utilized atomistic simulations as well as special methods of application.
+Details of the simulation and associated test calculations are presented in chapter~\ref{chapter:simulation}.
+In chapter~\ref{chapter:defects}, results of investigations of single defect configurations, structures of combinations of two individual defects as well as some selected diffusion pathways in silicon are shown.