-Indeed, in the optimized recipe to form 3C-SiC by IBS \cite{lindner99}, elevated temperatures are used to improve the epitaxial orientation together with a low temperature implant to destroy stable SiC nanocrystals at the interface, which are unable to migrate during thermal annealing resulting in a rough surface.
-Furtermore, the improvement of the epitaxial orientation of the precipitate with increasing temperature in experiment perfectly conforms to the increasing occurrence of \cs{} in simulation.
-At elevated temperatures, implanted C is therefore expected to occupy substitutionally usual Si lattice sites right from the start.
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+This likewise agrees to results of IBS experiments utilizing implantation temperatures of \degc{550}, which require annealing temperatures as high as \degc{1405} for C segregation due to the stability of \cs{}~\cite{reeson87}.
+%
+Indeed, in the optimized recipe to form 3C-SiC by IBS~\cite{lindner99}, elevated temperatures are used to improve the epitaxial orientation together with a low temperature implant to destroy stable SiC nanocrystals at the interface, which are unable to migrate during thermal annealing resulting in a rough surface.
+Furthermore, the improvement of the epitaxial orientation of the precipitate with increasing temperature in experiment perfectly conforms to the increasing occurrence of \cs{} in simulation.
+%
+% todo add sync here starting from strane93, werner96 ...
+Moreover, implantations of an understoichiometric dose into preamorphized Si followed by an annealing step at \degc{700} result in Si$_{1-x}$C$_x$ layers with C residing on substitutional Si lattice sites~\cite{strane93}.
+For implantations of an understoichiometric dose into c-Si at room temperature followed by thermal annealing below and above \degc{700}, the formation of small C$_{\text{i}}$ agglomerates and SiC precipitates was observed respectively~\cite{werner96}.
+However, increased implantation temperatures were found to be more efficient than postannealing methods resulting in the formation of SiC precipitates for implantations at \unit[450]{$^{\circ}$C}~\cite{lindner99,lindner01}.
+%
+Thus, at elevated temperatures, implanted C is expected to occupy substitutionally usual Si lattice sites right from the start.
+These findings, which are outlined in more detail within the comprehensive description in chapter~\ref{chapter:summary}, are in perfect agreement with previous results of the quantum-mechanical investigations.