-Furtermore, the improvement of the epitaxial orientation of the precipitate with increasing temperature in experiment perfectly conforms to the increasing occurrence of \cs{} in simulation.
-At elevated temperatures, implanted C is therefore expected to occupy substitutionally usual Si lattice sites right from the start.
+Furthermore, the improvement of the epitaxial orientation of the precipitate with increasing temperature in experiment perfectly conforms to the increasing occurrence of \cs{} in simulation.
+%
+% todo add sync here starting from strane93, werner96 ...
+Moreover, implantations of an understoichiometric dose into preamorphized Si followed by an annealing step at \degc{700} result in Si$_{1-x}$C$_x$ layers with C residing on substitutional Si lattice sites \cite{strane93}.
+For implantations of an understoichiometric dose into c-Si at room temperature followed by thermal annealing below and above \degc{700}, the formation of small C$_{\text{i}}$ agglomerates and SiC precipitates was observed respectively \cite{werner96}.
+However, increased implantation temperatures were found to be more efficient than postannealing methods resulting in the formation of SiC precipitates for implantations at \unit[450]{$^{\circ}$C} \cite{lindner99,lindner01}.
+%
+Thus, at elevated temperatures, implanted C is expected to occupy substitutionally usual Si lattice sites right from the start.
+These findings, which are outlined in more detail within the comprehensive description in chapter~\ref{chapter:summary}, are in perfect agreement with previous results of the quantum-mechanical investigations.