% rt implantation + annealing
Furthermore, C implanted at room temperature was found to be able to migrate towards the surface and form C-rich clusters in contrast to implantations at elevated temperatures, which form stable epitaxially aligned 3C-SiC precipitates \cite{serre95}.
In simulation, low temperatures result in configurations of highly mobile \ci{} \hkl<1 0 0> DBs whereas elevated temperatures show configurations of \cs{}, which constitute an extremely stable configuration that is unlikely to migrate.
% rt implantation + annealing
Furthermore, C implanted at room temperature was found to be able to migrate towards the surface and form C-rich clusters in contrast to implantations at elevated temperatures, which form stable epitaxially aligned 3C-SiC precipitates \cite{serre95}.
In simulation, low temperatures result in configurations of highly mobile \ci{} \hkl<1 0 0> DBs whereas elevated temperatures show configurations of \cs{}, which constitute an extremely stable configuration that is unlikely to migrate.