However, these layers show an extremely poor interface to the Si top layer governed by a high density of SiC precipitates, which are not affected in the C redistribution during annealing and, thus, responsible for the rough interface.
Hence, to obtain sharp interfaces and single-crystalline SiC layers temperatures between \unit[400]{$^{\circ}$C} and \unit[600]{$^{\circ}$C} have to be used.
Indeed, reasonable results were obtained at \unit[500]{$^{\circ}$C}~\cite{lindner98} and even better interfaces were observed for \unit[450]{$^{\circ}$C}~\cite{lindner99_2}.
However, these layers show an extremely poor interface to the Si top layer governed by a high density of SiC precipitates, which are not affected in the C redistribution during annealing and, thus, responsible for the rough interface.
Hence, to obtain sharp interfaces and single-crystalline SiC layers temperatures between \unit[400]{$^{\circ}$C} and \unit[600]{$^{\circ}$C} have to be used.
Indeed, reasonable results were obtained at \unit[500]{$^{\circ}$C}~\cite{lindner98} and even better interfaces were observed for \unit[450]{$^{\circ}$C}~\cite{lindner99_2}.