Since high temperatures used in the solid-phase epitaxial regrowth method promotes SiC precipitation, other groups realized substitutional C incorporation for strained Si$_{1-y}$C$_y$/Si heterostructures~\cite{iyer92,fischer95,powell93,osten96,osten99,laveant2002} or partially to fully strain-compensated (even inversely distorted~\cite{osten94_2}) Si$_{1-x-y}$Ge$_x$C${_y}$ layers on Si~\cite{eberl92,powell93_2,osten94,dietrich94} by MBE.
Investigations reveal a strong temperature-dependence of the amount of substitutionally incorporated C, which is increased for decreasing temperature accompanied by deterioration of the crystal quality~\cite{osten96,osten99}.
While not being compatible to very-large-scale integration technology, C concentrations of \unit[2]{\%} and more have been realized~\cite{laveant2002}.
Since high temperatures used in the solid-phase epitaxial regrowth method promotes SiC precipitation, other groups realized substitutional C incorporation for strained Si$_{1-y}$C$_y$/Si heterostructures~\cite{iyer92,fischer95,powell93,osten96,osten99,laveant2002} or partially to fully strain-compensated (even inversely distorted~\cite{osten94_2}) Si$_{1-x-y}$Ge$_x$C${_y}$ layers on Si~\cite{eberl92,powell93_2,osten94,dietrich94} by MBE.
Investigations reveal a strong temperature-dependence of the amount of substitutionally incorporated C, which is increased for decreasing temperature accompanied by deterioration of the crystal quality~\cite{osten96,osten99}.
While not being compatible to very-large-scale integration technology, C concentrations of \unit[2]{\%} and more have been realized~\cite{laveant2002}.