-However, in another IBS study Nejim et~al.\cite{nejim95} propose a topotactic transformation that is likewise based on the formation of substitutional C.
-The formation of substitutional C, however, is accompanied by Si self-interstitial atoms that previously occupied the lattice sites and a concurrent reduction of volume due to the lower lattice constant of SiC compared to Si.
-Both processes are believed to compensate one another.
-Additionally IBS studies on \cite{martin90,...} ...
-The fact that the cubic phase instead of the thermodynamically favorable $\alpha$-SiC structure is formed supports the latter mechanism ...
-
-%cites:
-
-% continue with strane94 and werner96
-
-%ibs, c-si agglom: werner96,werner97,eichhorn99,lindner99_2,koegler03
-%hetero, coherent sic by sub c: strane94,guedj98
-%ibs, c sub: nejim95
-%ibs, indicated c sub: martin90 + conclusions reeson8x, eichhorn02
-%more: taylor93, kitabatake contraction along 110, koegler03
-%taylor93: sic prec only/more_easy if self interstitials are present
-
-% -> skorupa 3.2: c sub vs sic prec
-
-% remember!
+However, in another IBS study Nejim et~al. \cite{nejim95} propose a topotactic transformation that is likewise based on substitutional C, which replaces four of the eight Si atoms in the Si unit cell accompanied by the generation of four Si interstitials.
+Since the emerging strain due to the expected volume reduction of \unit[48]{\%} would result in the formation of dislocations, which, however, are not observed, the interstitial Si is assumed to react with further implanted C atoms in the released volume.
+The resulting strain due to the slightly lower Si density of SiC compared to Si of about \unit[3]{\%} is sufficiently small to legitimate the absence of dislocations.
+Furthermore, IBS studies of Reeson~et~al. \cite{reeson87}, in which implantation temperatures of \unit[500]{$^{\circ}$C} were employed, revealed the necessity of extreme annealing temperatures for C redistribution, which is assumed to result from the stability of substitutional C and consequently high activation energies required for precipitate dissolution.
+The results support a mechanism of an initial coherent precipitation based on substitutional C that is likewise valid for the IBS of 3C-SiC by C implantation into Si at elevated temperatures.
+The fact that the metastable cubic phase instead of the thermodynamically more favorable hexagonal $\alpha$-SiC structure is formed and the alignment of these cubic precipitates within the Si matrix, which can be explained by considering a topotactic transformation by C atoms occupying substitutionally Si lattice sites of one of the two fcc lattices that make up the Si crystal, reinforce the proposed mechanism.
+
+To conclude, a controversy with respect to the precipitation of SiC in Si exists in literature.
+Next to the pure scientific interest, solving this controversy and gaining new insight in the SiC conversion mechanism might enable significant progress in the heteroepitaxial growth of thin films featuring non-coherent interfaces in the C/Si system.
+On the other hand, processes relying upon prevention of precipitation in order to produce strained heterostructures will likewise benefit.
+
+% remember