+The classical potential MD method is much less computationally costly compared to the highly accurate quantum-mechanical method.
+Thus, the method is capable of performing structural optimizations on large systems and MD calculations may be used to model a system over long time scales.
+Defect structures are modeled in a cubic supercell (type 3) of nine Si lattice constants in each direction containing 5832 Si atoms.
+Reproducing the SiC precipitation was attempted in cubic c-Si supercells, which have a size up to 31 Si unit cells in each direction consisting of 238328 Si atoms.
+A Tersoff-like bond order potential by Erhart and Albe (EA) \cite{albe_sic_pot} is used to describe the atomic interaction.
+Constant pressure simulations are realized by the Berendsen barostat \cite{berendsen84} using a time constant of \unit[100]{fs} and a bulk modulus of \unit[100]{GPa} for Si.
+The temperature is controlled by the Berendsen thermostat \cite{berendsen84} with a time constant of \unit[100]{fs}.
+Integration of the equations of motion is realized by the velocity Verlet algorithm \cite{verlet67} using a fixed time step of \unit[1]{fs}.
+For structural relaxation of defect structures the same algorithm is utilized with the temperature set to zero Kelvin.
+This also applies for the relaxation of structures within the CRT calculations to find migration pathways.
+In the latter case the time constant of the Berendsen thermostat is set to \unit[1]{fs} in order to achieve direct velocity scaling, which corresponds to a steepest descent minimization driving the system into a local minimum, if the temperature is set to zero Kelvin.
+However, in some cases a time constant of \unit[100]{fs} turned out to result in lower barriers.
+Defect structures as well as the simulations modeling the SiC precipitation are performed in the isothermal-isobaric $NpT$ ensemble.
+
+In addition to the bond order formalism the EA potential provides a set of parameters to describe the interaction in the C/Si system, as discussed in section \ref{subsection:interact_pot}.
+There are basically no free parameters, which could be set by the user and the properties of the potential and its parameters are well known and have been extensively tested by the authors \cite{albe_sic_pot}.
+Therefore, test calculations are restricted to the time step used in the Verlet algorithm to integrate the equations of motion.
+Nevertheless, a further and rather uncommon test is carried out to roughly estimate the capabilities of the EA potential regarding the description of 3C-SiC precipitation in c-Si.
+
+\subsection{Time step}
+
+The quality of the integration algorithm and the occupied time step is determined by the ability to conserve the total energy.
+Therefore, simulations of a $9\times9\times9$ 3C-SiC unit cell containing 5832 atoms in total are carried out in the $NVE$ ensemble.
+The calculations are performed for \unit[100]{ps} corresponding to $10^5$ integration steps and two different initial temperatures are considered, i.e.\ \unit[0]{$^{\circ}$C} and \unit[1000]{$^{\circ}$C}.
+\begin{figure}[t]
+\begin{center}
+\includegraphics[width=0.7\textwidth]{verlet_e.ps}
+\end{center}
+\caption{Evolution of the total energy of 3C-SiC in the $NVE$ ensemble for two different initial temperatures.}
+\label{fig:simulation:verlet_e}
+\end{figure}
+The evolution of the total energy is displayed in Fig.~\ref{fig:simulation:verlet_e}.
+Almost no shift in energy is observable for the simulation at \unit[0]{$^{\circ}$C}.
+Even for \unit[1000]{$^{\circ}$C} the shift is as small as \unit[0.04]{eV}, which is a quite acceptable error for $10^5$ integration steps.
+Thus, using a time step of \unit[100]{ps} is considered small enough.
+
+\subsection{3C-SiC precipitate in c-Si}
+\label{section:simulation:prec}
+
+Below, a spherical 3C-SiC precipitate enclosed in a c-Si surrounding is investigated by means of MD.
+On the one hand, these investigations are meant to draw conclusions on the capabilities of the potential for modeling the respective tasks in the C/Si system.
+Since, on the other hand, properties of the 3C-SiC precipitate, its surrounding as well as the interface can be obtained, the calculations could be considered to constitute a first investigation rather than a test of the capabilities of the potential.
+
+\subsubsection{Interfacial energy}
+
+To construct a spherical and topotactically aligned 3C-SiC precipitate in c-Si, the approach illustrated in the following is applied.
+A total simulation volume $V$ consisting of 21 unit cells of c-Si in each direction is created.
+To obtain a minimal and stable precipitate 5500 carbon atoms are considered necessary according to experimental results as discussed in section \ref{subsection:ibs} and \ref{section:assumed_prec}.
+This corresponds to a spherical 3C-SiC precipitate with a radius of approximately \unit[3]{nm}.
+The initial precipitate configuration is constructed in two steps.
+In the first step the surrounding Si matrix is created.
+This is realized by just skipping the generation of Si atoms inside a sphere of radius $x$, which is the first unknown variable.
+The Si lattice constant $a_{\text{Si}}$ of the surrounding c-Si matrix is assumed to not alter dramatically and, thus, is used for the initial lattice creation.
+In a second step 3C-SiC is created inside the empty sphere of radius $x$.
+The lattice constant $y$, the second unknown variable, is chosen in such a way, that the necessary amount of carbon is generated and that the total amount of silicon atoms corresponds to the usual amount contained in the simulation volume.
+This is entirely described by the equation
+\begin{equation}
+\frac{8}{a_{\text{Si}}^3}(
+V
+-\frac{4}{3}\pi x^3)+
+\frac{4}{y^3}\frac{4}{3}\pi x^3
+=21^3\cdot 8
+\text{ ,}
+\label{eq:simulation:constr_sic_01}
+\end{equation}
+where the volume is given by $V=21^3 a_{\text{Si}}^3$ and the the additional condition $\frac{4}{y^3}\frac{4}{3}\pi x^3=5500$.
+This can be simplified to read
+\begin{equation}
+\frac{8}{a_{\text{Si}}^3}\frac{4}{3}\pi x^3=5500
+\Rightarrow x = \left(\frac{5500 \cdot 3}{32 \pi} \right)^{1/3}a_{\text{Si}}
+\label{eq:simulation:constr_sic_02}
+\end{equation}
+and
+\begin{equation}
+%x^3=\frac{16\pi}{5500 \cdot 3}y^3=
+%\frac{16\pi}{5500 \cdot 3}\frac{5500 \cdot 3}{32 \pi}a_{\text{Si}}^3
+%\Rightarrow
+y=\left(\frac{1}{2} \right)^{1/3}a_{\text{Si}}
+\text{ .}
+\label{eq:simulation:constr_sic_03}
+\end{equation}
+By this means values of \unit[2.973]{nm} and \unit[4.309]{\AA} are obtained for the initial precipitate radius and lattice constant of 3C-SiC.
+Since the generation of atoms is a discrete process with regard to the size of the volume the expected amounts of atoms are not obtained.
+However, by applying these values the final configuration varies only slightly from the expected one by five carbon and eleven silicon atoms, as can be seen in Table \ref{table:simulation:sic_prec}.
+\begin{table}[t]
+\begin{center}
+\begin{tabular}{l c c c c}
+\hline
+\hline
+ & C in 3C-SiC & Si in 3C-SiC & Si in c-Si surrounding & total amount of Si\\
+\hline
+Obtained & 5495 & 5486 & 68591 & 74077\\
+Expected & 5500 & 5500 & 68588 & 74088\\
+Difference & -5 & -14 & 3 & -11\\
+Notation & $N^{\text{3C-SiC}}_{\text{C}}$ & $N^{\text{3C-SiC}}_{\text{Si}}$
+ & $N^{\text{c-Si}}_{\text{Si}}$ & $N^{\text{total}}_{\text{Si}}$ \\
+\hline
+\hline
+\end{tabular}
+\caption{Comparison of the expected and obtained amounts of Si and C atoms by applying the values from equations \eqref{eq:simulation:constr_sic_02} and \eqref{eq:simulation:constr_sic_03} in the 3C-SiC precipitate construction approach.}
+\label{table:simulation:sic_prec}
+\end{center}
+\end{table}
+
+After the initial configuration is constructed some of the atoms located at the 3C-SiC/c-Si interface show small distances, which results in high repulsive forces acting on the atoms.
+Thus, the system is equilibrated using strong coupling to the heat bath, which is set to be \unit[20]{$^{\circ}$C}.
+Once the main part of the excess energy is carried out previous settings for the Berendsen thermostat are restored and the system is relaxed for another \unit[10]{ps}.
+
+\begin{figure}[t]
+\begin{center}
+\includegraphics[width=0.7\textwidth]{pc_0.ps}
+\end{center}
+\caption[Radial distribution of a 3C-SiC precipitate embedded in c-Si at $20\,^{\circ}\mathrm{C}$.]{Radial distribution of a 3C-SiC precipitate embedded in c-Si at \unit[20]{$^{\circ}$C}. The Si-Si radial distribution of plain c-Si is plotted for comparison. Green arrows mark bumps in the Si-Si distribution of the precipitate configuration, which do not exist in plain c-Si.}
+\label{fig:simulation:pc_sic-prec}
+\end{figure}
+Fig.~\ref{fig:simulation:pc_sic-prec} shows the radial distribution of the obtained precipitate configuration.
+The Si-Si radial distribution for both, plain c-Si and the precipitate configuration show a maximum at a distance of \unit[0.235]{nm}, which is the distance of next neighbored Si atoms in c-Si.
+Although no significant change of the lattice constant of the surrounding c-Si matrix was assumed, surprisingly, there is no change at all within observational accuracy.
+Looking closer at higher order Si-Si peaks might even allow the guess of a slight increase of the lattice constant compared to the plain c-Si structure.
+A new Si-Si peak arises at \unit[0.307]{nm}, which is identical to the peak of the C-C distribution around that value.
+It corresponds to second next neighbors in 3C-SiC, which applies for Si as well as C pairs.
+The bumps of the Si-Si distribution at higher distances marked by the green arrows can be explained in the same manner.
+They correspond to the fourth and sixth next neighbor distance in 3C-SiC.
+It is easily identifiable how these C-C peaks, which imply Si pairs at same distances inside the precipitate, contribute to the bumps observed in the Si-Si distribution.
+The Si-Si and C-C peak at \unit[0.307]{nm} enables the determination of the lattice constant of the embedded 3C-SiC precipitate.
+A lattice constant of \unit[4.34]{\AA} compared to \unit[4.36]{\AA} for bulk 3C-SiC is obtained.
+This is in accordance with the peak of Si-C pairs at a distance of \unit[0.188]{nm}.
+Thus, the precipitate structure is slightly compressed compared to the bulk phase.
+This is a quite surprising result since due to the finite size of the c-Si surrounding a non-negligible impact of the precipitate on the materializing c-Si lattice constant especially near the precipitate could be assumed.
+However, it seems that the size of the c-Si host matrix is chosen large enough to even find the precipitate in a compressed state.
+
+The absence of a compression of the c-Si surrounding is due to the possibility of the system to change its volume.
+Otherwise the increase of the lattice constant of the precipitate of roughly \unit[4.31]{\AA} in the beginning up to \unit[4.34]{\AA} in the relaxed precipitate configuration could not take place without an accompanying reduction of the lattice constant of the c-Si surrounding.
+If the total volume is assumed to be the sum of the volumes that are composed of Si atoms forming the c-Si surrounding and Si atoms involved forming the precipitate, the expected increase can be calculated by
+\begin{equation}
+ \frac{V}{V_0}=
+ \frac{\frac{N^{\text{c-Si}}_{\text{Si}}}{8/a_{\text{c-Si prec}}}+
+ \frac{N^{\text{3C-SiC}}_{\text{Si}}}{4/a_{\text{3C-SiC prec}}}}
+ {\frac{N^{\text{total}}_{\text{Si}}}{8/a_{\text{plain c-Si}}}}
+\end{equation}
+with the notation used in Table \ref{table:simulation:sic_prec}.
+Here, $a_{\text{c-Si prec}}$ denotes the lattice constant of the surrounding crystalline Si and $a_{\text{3C-SiC prec}}$ is the lattice constant of the precipitate.
+The lattice constant of plain c-Si at \unit[20]{$^{\circ}$C} can be determined more accurately by the side lengths of the simulation box of an equilibrated structure instead of using the radial distribution data.
+By this, a value of $a_{\text{plain c-Si}}=5.439\,\text{\AA}$ is obtained.
+The same lattice constant is assumed for the c-Si surrounding in the precipitate configuration $a_{\text{c-Si prec}}$ since peaks in the radial distribution match the ones of plain c-Si.
+Using $a_{\text{3C-SiC prec}}=4.34\,\text{\AA}$ as observed from the radial distribution finally results in an increase of the initial volume by \unit[0.12]{\%}.
+However, each side length and the total volume of the simulation box is increased by \unit[0.20]{\%} and \unit[0.61]{\%} respectively compared to plain c-Si at \unit[20]{$^{\circ}$C}.
+Since the c-Si surrounding resides in an uncompressed state the excess increase must be attributed to relaxation of strain with the strain resulting from either the compressed precipitate or the 3C-SiC/c-Si interface region.
+This also explains the possibly identified slight increase of the c-Si lattice constant in the surrounding as mentioned earlier.
+As the pressure is set to zero the free energy is minimized with respect to the volume enabled by the Berendsen barostat algorithm.
+Apparently the minimized structure with respect to the volume is a configuration of a small compressively stressed precipitate and a large amount of slightly stretched c-Si in the surrounding.
+
+To finally draw some conclusions concerning the capabilities of the potential, the 3C-SiC/c-Si interface is now addressed.
+One important size analyzing the interface is the interfacial energy.
+A good estimate of the interfacial energy should be obtained by utilizing the formula for determining the defect formation energy as described in equation \eqref{eq:basics:ef2}.
+Using the notation of Table \ref{table:simulation:sic_prec} and assuming that the system is composed out of $N^{\text{3C-SiC}}_{\text{C}}$ C atoms forming the SiC compound plus the remaining Si atoms, the energy is given by
+\begin{equation}
+ E_{\text{f}}=E-
+ N^{\text{3C-SiC}}_{\text{C}} E_{\text{coh}}^{\text{SiC}}-
+ \left(N^{\text{total}}_{\text{Si}}-N^{\text{3C-SiC}}_{\text{C}}\right)
+ \mu_{\text{coh}}^{\text{Si}} \text{ ,}
+\label{eq:simulation:ife}
+\end{equation}
+where $E$ is the total energy of the precipitate configuration at zero temperature.
+An interfacial energy of \unit[2267.28]{eV} is obtained.
+The amount of C atoms together with the observed lattice constant of the precipitate leads to a precipitate radius of \unit[29.93]{\AA}.
+Thus, the interface tension, given by the energy of the interface divided by the surface area of the precipitate is \unit[20.15]{eV/nm$^2$} or \unit[$3.23\times 10^{-4}$]{J/cm$^2$}.
+This value perfectly fits within the experimentally estimated range of \unit[2--8$\times10^{-4}$]{J/cm$^2$} \cite{taylor93}.
+Thus, the EA potential is considered an appropriate choice for the current study concerning the accurate description of the energetics of interfaces.
+Furthermore, since the calculated interfacial energy is located in the lower part of the experimental range, the obtained interface structure might resemble an authentic configuration of an energetically favorable interface structure of a 3C-SiC precipitate in c-Si.
+
+\subsubsection{Stability of the precipitate}
+
+To investigate the stability of the precipitate, which is assumed to be stable even at temperatures above the Si melting temperature, the configuration is heated up beyond the critical point, at which the Si melting transition occurs.
+For this, the transition point of c-Si needs to be evaluated first.
+According to the authors of the potential, the Si melting point is \degk{2450}.
+However, melting is not predicted to occur instantly after exceeding the melting point due to the additionally required transition enthalpy and hysteresis behavior.
+To determine the transition point, c-Si is heated up using a heating rate of \unit[1]{$^{\circ}$C/ps}.
+\begin{figure}[tp]
+\begin{center}
+\includegraphics[width=0.7\textwidth]{fe_and_t.ps}
+\end{center}
+\caption{Total energy and temperature evolution of c-Si at temperatures in the region around the melting transition.}
+\label{fig:simulation:fe_and_t}
+\end{figure}
+Fig.~\ref{fig:simulation:fe_and_t} shows the total energy and temperature evolution in the region around the transition temperature.
+Indeed, a transition and the accompanied critical behavior of the total energy is first observed at approximately \degk{3125}, which corresponds to \unit[128]{\%} of the Si melting temperature.
+The difference in total energy is \unit[0.58]{eV} per atom corresponding to \unit[55.7]{kJ/mole}, which compares quite well to the Si enthalpy of melting of \unit[50.2]{kJ/mole}.
+
+The precipitate structure is heated up using the same heating rate.
+As can be seen in Fig.~\ref{fig:simulation:sic_melt}, which shows a cross-sectional image of the configuration at different temperatures, the precipitate is stable whereas melting of the surrounding Si host matrix starting at the interface region is observed.
+\begin{figure}[tp]
+\begin{center}
+\subfigure[]{\label{fig:simulation:sic_melt1}\includegraphics[width=7cm]{sic_prec/melt_01.eps}}
+\subfigure[]{\label{fig:simulation:sic_melt2}\includegraphics[width=7cm]{sic_prec/melt_02.eps}}
+\subfigure[]{\label{fig:simulation:sic_melt3}\includegraphics[width=7cm]{sic_prec/melt_03.eps}}
+\end{center}
+\caption{Cross section image of the 3C-SiC precipitate in c-Si at temperatures before (a), at the onset of (b) and after (c) the Si melting transition.}
+\label{fig:simulation:sic_melt}