+Thus, the interface tension, given by the energy of the interface divided by the surface area of the precipitate is \unit[20.15]{eV/nm$^2$} or \unit[$3.23\times 10^{-4}$]{J/cm$^2$}.
+This value perfectly fits within the experimentally estimated range of \unit[2--8$\times10^{-4}$]{J/cm$^2$}~\cite{taylor93}.
+Thus, the EA potential is considered an appropriate choice for the current study concerning the accurate description of the energetics of interfaces.
+Furthermore, since the calculated interfacial energy is located in the lower part of the experimental range, the obtained interface structure might resemble an authentic configuration of an energetically favorable interface structure of a 3C-SiC precipitate in c-Si.
+
+\subsubsection{Stability of the precipitate}
+
+To investigate the stability of the precipitate, which is assumed to be stable even at temperatures above the Si melting temperature, the configuration is heated up beyond the critical point, at which the Si melting transition occurs.
+For this, the transition point of c-Si needs to be evaluated first.
+According to the authors of the potential, the Si melting point is \degk{2450}.
+However, melting is not predicted to occur instantly after exceeding the melting point due to the additionally required transition enthalpy and hysteresis behavior.
+To determine the transition point, c-Si is heated up using a heating rate of \unit[1]{$^{\circ}$C/ps}.
+\begin{figure}[tp]
+\begin{center}
+\includegraphics[width=0.7\textwidth]{fe_and_t.ps}
+\end{center}
+\caption{Total energy and temperature evolution of c-Si at temperatures in the region around the melting transition.}
+\label{fig:simulation:fe_and_t}
+\end{figure}
+Fig.~\ref{fig:simulation:fe_and_t} shows the total energy and temperature evolution in the region around the transition temperature.
+Indeed, a transition and the accompanied critical behavior of the total energy is first observed at approximately \degk{3125}, which corresponds to \unit[128]{\%} of the Si melting temperature.
+The difference in total energy is \unit[0.58]{eV} per atom corresponding to \unit[55.7]{kJ/mole}, which compares quite well to the Si enthalpy of melting of \unit[50.2]{kJ/mole}.
+
+The precipitate structure is heated up using the same heating rate.
+As can be seen in Fig.~\ref{fig:simulation:sic_melt}, which shows a cross-sectional image of the configuration at different temperatures, the precipitate is stable whereas melting of the surrounding Si host matrix starting at the interface region is observed.
+\begin{figure}[tp]
+\begin{center}
+\subfigure[]{\label{fig:simulation:sic_melt1}\includegraphics[width=7cm]{sic_prec/melt_01.eps}}
+\subfigure[]{\label{fig:simulation:sic_melt2}\includegraphics[width=7cm]{sic_prec/melt_02.eps}}
+\subfigure[]{\label{fig:simulation:sic_melt3}\includegraphics[width=7cm]{sic_prec/melt_03.eps}}
+\end{center}
+\caption{Cross section image of the 3C-SiC precipitate in c-Si at temperatures before (a), at the onset of (b) and after (c) the Si melting transition.}
+\label{fig:simulation:sic_melt}
+\end{figure}
+This is verified by the radial distribution function shown in Fig.~\ref{fig:simulation:pc_500-fin}, which displays configurations before and after the Si transition occurs.
+\begin{figure}[tp]
+\begin{center}
+\includegraphics[width=0.7\textwidth]{pc_500-fin.ps}
+\end{center}
+\caption{Radial distribution of a 3C-SiC precipitate embedded in c-Si at temperatures below and above the Si melting transition point.}
+\label{fig:simulation:pc_500-fin}
+\end{figure}
+The precipitate itself is not involved in the transition, as indicated by the Si-C and C-C distribution, which essentially stays the same.
+It is only the c-Si surrounding undergoing a structural phase transition, which is very well reflected by the difference observed for the respective Si-Si distributions.
+The temperature of transition is determined to be around \degk{2840}.
+This is surprising since the melting transition of c-Si for the same heating conditions is expected at temperatures around \degk{3125} as discussed above.
+Obviously, the precipitate lowers the transition point of the surrounding c-Si matrix.
+This is indeed verified by the cross-sectional images of the configurations shown in Fig.~\ref{fig:simulation:sic_melt}.
+Melting of the Si surrounding in fact starts in the defective interface region of the 3C-SiC precipitate and the c-Si surrounding propagating outwards until the whole Si matrix is affected.