+The short time, which is not sufficient for structural evolution of the strongly damaged region, can be mapped to a system of low temperature, which lacks the kinetic energy required for the restructuring process.
+
+% experimental findings
+These findings as well as the derived conclusion on the precipitation mechanism involving an increased participation of \cs{} agree well with experimental results.
+% low t high mobility
+% high t stable config, no redistr
+C implanted at room temperature was found to be able to migrate towards the surface in contrast to implantations at \degc{500}, which do not show redistribution of the C atoms \cite{serre95}.
+This excellently conforms to the results of the MD simulations at different temperatures, which show the formation of highly mobile \ci{} \hkl<1 0 0> DBs for low and much more stable \cs{} defects for high temperatures.
+This is likewise suggested by IBS experiments utilizing implantation temperatures of \degc{550} followed by incoherent lamp annealing at temperatures as high as \degc{1405} required for the C segregation due to the stability of \cs{} \cite{reeson87}.
+% high imp temps more effective to achieve ?!? ...
+Furthermore, increased implantation temperatures were found to be more efficient than high temperatures in the postannealing step concerning the formation of topotactically aligned 3C-SiC precipitates \cite{kimura82,eichhorn02}.
+%
+Particularly strong C-C bonds, which are hard to break by thermal annealing, were found to effectively aggravate the restructuring process of such configurations \cite{deguchi92}.
+These bonds preferentially arise if additional kinetic energy provided by an increase of the implantation temperature is missing to accelerate or even enable atomic rearrangements in regions exhibiting a large amount of C atoms.
+This is assumed to be related to the problem of slow structural evolution encountered in the high C concentration simulations.
+%
+%Considering the efficiency of high implantation temperatures, experimental arguments exist, which point to the precipitation mechanism based on the agglomeration of \cs.
+More substantially, understoichiometric implantations at room temperature into preamorphized Si followed by a solid-phase epitaxial regrowth step at \degc{700} result in Si$_{1-x}$C$_x$ layers in the diamond cubic phase with C residing on substitutional Si lattice sites \cite{strane93}.
+The strained structure is found to be stable up to \degc{810}.
+Coherent clustering followed by precipitation is suggested if these structures are annealed at higher temperatures.
+%
+Similar, implantations of an understoichiometric dose into c-Si at room temperature followed by thermal annealing result in small spherical sized C$_{\text{i}}$ agglomerates below \unit[700]{$^{\circ}$C} and SiC precipitates of the same size above \unit[700]{$^{\circ}$C} \cite{werner96} annealing temperature.
+Since, however, the implantation temperature is considered more efficient than the postannealing temperature, SiC precipitates are expected and indeed observed for as-implanted samples \cite{lindner99,lindner01} in implantations performed at \unit[450]{$^{\circ}$C}.
+According to this, implanted C is likewise expected to occupy substitutionally regular Si lattice sites right from the start for implantations into c-Si at elevated temperatures.
+%
+%
+% low t - randomly ...
+% high t - epitaxial relation ...
+Moreover, implantations below the optimum temperature for the IBS of SiC show regions of randomly oriented SiC crystallites whereas epitaxial crystallites are found for increased temperatures \cite{lindner99}.
+The results of the MD simulations can be interpreted in terms of these experimental findings.
+The successive occupation of regular Si lattice sites by \cs{} atoms as observed in the high temperature MD simulations and assumed from results of the quantum-mechanical investigations perfectly satisfies the epitaxial relation of substrate and precipitate.
+In contrast, there is no obvious reason for a topotactic transition of \ci{} \hkl<1 0 0> DB agglomerates, as observed in the low temperature MD simulations, into epitaxially aligned precipitates.
+The latter transition would necessarily involve a much more profound change in structure.
+% amorphous region for low temperatures
+Experimentally, randomly oriented precipitates might also be due to SiC nucleation within the arising amorphous matrix \cite{lindner99}.
+In simulation, an amorphous SiC phase is formed for high C concentrations.
+This is due to high amounts of introduced damage within a short period of time resulting in essentially no time for structural evolution, which is comparable to the low temperature experiments, which lack the kinetic energy necessary for recrystallization of the highly damaged region.
+Indeed, the complex transformation of agglomerated \ci{} DBs as suggested by results of the low C concentration simulations could involve an intermediate amorphous phase probably accompanied by the loss of alignment with respect to the Si host matrix.
+%
+% perfectly explainable by Cs obvious hkl match but not for DBs
+In any case, the precipitation mechanism by accumulation of \cs{} obviously satisfies the experimental finding of identical \hkl(h k l) planes of substrate and precipitate.
+
+% no contradictions, something in interstitial lattice, projected potential ...
+Finally, it is worth to point out that the precipitation mechanism based on \cs{} does not necessarily contradict to results of the HREM studies \cite{werner96,werner97,lindner99_2}, which propose precipitation by agglomeration of \ci.
+In these studies, regions of dark contrasts are attributed to C atoms that reside in the interstitial lattice in an otherwise undisturbed Si lattice.
+The \ci{} atoms lead to a local increase of the crystal potential, which is responsible for the dark contrast.
+However, there is no particular reason for the C species to reside in the interstitial lattice.
+Contrasts are also assumed for Si$_{\text{i}}$.
+Once precipitation occurs, regions of dark contrasts disappear in favor of Moir\'e patterns indicating 3C-SiC in c-Si due to the mismatch in the lattice constant.
+Until then, however, these may likewise be composed of stretched SiC structures coherently aligned to the Si host together with \si{} in the surrounding or of already contracted incoherent SiC surrounded by Si on regular lattice sites as well as in the interstitial lattice, where the latter is too small to be detected in HREM.
+%In both cases Si$_{\text{i}}$ might be attributed a third role, which is the partial compensation of tensile strain that is present either in the stretched SiC or at the interface of the contracted SiC and the Si host.