-\si{}, which is likewise existent, serves several needs: as a vehicle to rearrange the \cs{} atoms, as a building block for the surrounding Si host or further SiC and for strain compensation, either in the stretched SiC structure or at the interface of the SiC precipitate and the Si matrix.
-% todo \si reduced interfacial energy
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-Results of the atomistic simulation study indicating the respective precipitation mechanism conform well with other experimental findings.
+Elevated temperatures result in increased entropic contributions to structural formation.
+Moreover, conditions prevalent in IBS deviate the system from thermodynamic equilibrium.
+Thereby, C$_{\text{i}}$ is enabled to turn into C$_{\text{s}}$ accompanied by the emission of Si$_{\text{i}}$.
+\si{}, which is likewise existent, serves several needs: as a vehicle to rearrange the \cs{} atoms, as a building block for the surrounding Si host or further SiC and for strain compensation.
+The \si{} vehicle turns \cs{} into highly mobile \ci.
+This way, C can be easily rearranged in order to end up in a configuration of C atoms that occupy substitutionally the lattice sites of one of the fcc lattices of the diamond structure.
+Stretched SiC structures arise, which are coherently aligned to the Si matrix.
+\si{} is believed to likewise compensate the tensile strain within these structures.
+This is followed by the precipitation into incoherent 3C-SiC once the strain energy of the coherent structure surpasses the interfacial energy of the incoherent precipitate and the c-Si substrate.
+The associated volume reduction is compensated by \si{} that may serve as a supply for further SiC or as a building block for the surrounding Si host and likewise reduce existing strain in the interface region.