X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=034ff304f45f64c5168ed03215957177aaf4c3bb;hb=f0848be6587f18f2cbfb91d9e91480118e4f0345;hp=aa0d739f28163ff67ff6963cd7d63ed28754c140;hpb=79c478c936e275b0da4934004cb4748cf36f123f;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index aa0d739..034ff30 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -430,6 +430,24 @@ publisher = "American Physical Society", } +@Article{bloechl93, + title = "First-principles calculations of self-diffusion + constants in silicon", + author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car + and D. B. Laks and W. Andreoni and S. T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "70", + number = "16", + pages = "2435--2438", + numpages = "3", + year = "1993", + month = apr, + doi = "10.1103/PhysRevLett.70.2435", + publisher = "American Physical Society", + notes = "si self int diffusion by ab initio md, formation + entropy calculations", +} + @Article{colombo02, title = "Tight-binding theory of native point defects in silicon", @@ -461,6 +479,57 @@ silicon, si self interstitials, free energy", } +@Article{goedecker02, + title = "A Fourfold Coordinated Point Defect in Silicon", + author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", + journal = "Phys. Rev. Lett.", + volume = "88", + number = "23", + pages = "235501", + numpages = "4", + year = "2002", + month = may, + doi = "10.1103/PhysRevLett.88.235501", + publisher = "American Physical Society", + notes = "first time ffcd, fourfold coordinated point defect in + silicon", +} + +@Article{sahli05, + title = "Ab initio molecular dynamics simulation of + self-interstitial diffusion in silicon", + author = "Beat Sahli and Wolfgang Fichtner", + journal = "Phys. Rev. B", + volume = "72", + number = "24", + pages = "245210", + numpages = "6", + year = "2005", + month = dec, + doi = "10.1103/PhysRevB.72.245210", + publisher = "American Physical Society", + notes = "si self int, diffusion, barrier height, voronoi + mapping applied", +} + +@Article{hobler05, + title = "Ab initio calculations of the interaction between + native point defects in silicon", + journal = "Materials Science and Engineering: B", + volume = "124-125", + number = "", + pages = "368--371", + year = "2005", + note = "EMRS 2005, Symposium D - Materials Science and Device + Issues for Future Technologies", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2005.08.072", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4", + author = "G. Hobler and G. Kresse", + notes = "vasp intrinsic si defect interaction study, capture + radius", +} + @Article{ma10, title = "Ab initio study of self-diffusion in silicon over a wide temperature range: Point defect states and @@ -535,7 +604,7 @@ Section B: Beam Interactions with Materials and Atoms", volume = "191", number = "1-4", - pages = "504--508", + pages = "487--496", year = "2002", note = "", ISSN = "0168-583X", @@ -653,7 +722,44 @@ month = oct, doi = "10.1103/PhysRevB.58.9845", publisher = "American Physical Society", - notes = "carbon pairs in si", + notes = "c_i c_s pair configuration, theoretical results", +} + +@Article{song90_2, + title = "Bistable interstitial-carbon--substitutional-carbon + pair in silicon", + author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D. + Watkins", + journal = "Phys. Rev. B", + volume = "42", + number = "9", + pages = "5765--5783", + numpages = "18", + year = "1990", + month = sep, + doi = "10.1103/PhysRevB.42.5765", + publisher = "American Physical Society", + notes = "c_i c_s pair configuration, experimental results", +} + +@Article{liu02, + author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and + Shifeng Lu and Xiang-Yang Liu", + collaboration = "", + title = "Ab initio modeling and experimental study of {C}--{B} + interactions in Si", + publisher = "AIP", + year = "2002", + journal = "Applied Physics Letters", + volume = "80", + number = "1", + pages = "52--54", + keywords = "silicon; boron; carbon; elemental semiconductors; + impurity-defect interactions; ab initio calculations; + secondary ion mass spectra; diffusion; interstitials", + URL = "http://link.aip.org/link/?APL/80/52/1", + doi = "10.1063/1.1430505", + notes = "c-c 100 split, lower as a and b states of capaz", } @Article{dal_pino93, @@ -865,25 +971,31 @@ volume = "", number = "", pages = "675--678", - keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C - atom/radiation induced defect interaction;C depth - distribution;C precipitation;C-Si defects;C-Si - dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high - energy ion implantation;ion implantation;metastable - agglomerates;microdefects;positron annihilation - spectroscopy;rapid thermal annealing;secondary ion mass - spectrometry;vacancy clusters;buried - layers;carbon;elemental semiconductors;impurity-defect - interactions;ion implantation;positron - annihilation;precipitation;rapid thermal - annealing;secondary ion mass - spectra;silicon;transmission electron - microscopy;vacancies (crystal);", doi = "10.1109/IIT.1996.586497", ISSN = "", notes = "c-si agglomerates dumbbells", } +@Article{werner98, + author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and + D. C. Jacobson", + collaboration = "", + title = "Carbon diffusion in silicon", + publisher = "AIP", + year = "1998", + journal = "Applied Physics Letters", + volume = "73", + number = "17", + pages = "2465--2467", + keywords = "silicon; carbon; elemental semiconductors; diffusion; + secondary ion mass spectra; semiconductor epitaxial + layers; annealing; impurity-defect interactions; + impurity distribution", + URL = "http://link.aip.org/link/?APL/73/2465/1", + doi = "10.1063/1.122483", + notes = "c diffusion in si, kick out mechnism", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -992,6 +1104,65 @@ NETHERLANDS", } +@Article{zirkelbach09, + title = "Molecular dynamics simulation of defect formation and + precipitation in heavily carbon doped silicon", + journal = "Materials Science and Engineering: B", + volume = "159-160", + number = "", + pages = "149--152", + year = "2009", + note = "EMRS 2008 Spring Conference Symposium K: Advanced + Silicon Materials Research for Electronic and + Photovoltaic Applications", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2008.10.010", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39", + author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and + B. Stritzker", + keywords = "Silicon", + keywords = "Carbon", + keywords = "Silicon carbide", + keywords = "Nucleation", + keywords = "Defect formation", + keywords = "Molecular dynamics simulations", +} + +@Article{zirkelbach10a, + title = "Defects in carbon implanted silicon calculated by + classical potentials and first-principles methods", + journal = "Phys. Rev. B", + volume = "82", + number = "9", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", +} + +@Article{zirkelbach10b, + title = "First principles study of defects in carbon implanted + silicon", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", +} + +@Article{zirkelbach10c, + title = "...", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", +} + @Article{lindner99, title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} @@ -1054,6 +1225,25 @@ notes = "ibs, burried sic layers", } +@Article{lindner06, + title = "On the balance between ion beam induced nanoparticle + formation and displacive precipitate resolution in the + {C}-Si system", + journal = "Materials Science and Engineering: C", + volume = "26", + number = "5-7", + pages = "857--861", + year = "2006", + note = "Current Trends in Nanoscience - from Materials to + Applications", + ISSN = "0928-4931", + doi = "DOI: 10.1016/j.msec.2005.09.099", + URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a", + author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth + and B. Stritzker", + notes = "c int diffusion barrier", +} + @Article{ito04, title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial @@ -2474,7 +2664,7 @@ title = "Accurate and simple density functional for the electronic exchange energy: Generalized gradient approximation", - author = "John P. Perdew and Wang Yue", + author = "John P. Perdew and Yue Wang", journal = "Phys. Rev. B", volume = "33", number = "12", @@ -2669,6 +2859,21 @@ carbon defect, formation energies", } +@Article{besson91, + title = "Electronic structure of interstitial carbon in + silicon", + author = "Morgan Besson and Gary G. DeLeo", + journal = "Phys. Rev. B", + volume = "43", + number = "5", + pages = "4028--4033", + numpages = "5", + year = "1991", + month = feb, + doi = "10.1103/PhysRevB.43.4028", + publisher = "American Physical Society", +} + @Article{kaxiras96, title = "Review of atomistic simulations of surface diffusion and growth on semiconductors",