X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=18a2e3994ca81618cf0e2f5690aa0052f960c628;hb=633db250e42a5724c851597ee938cfa93df0665b;hp=4588c0843ccb0c9cb7dc60693ef9412eea3d8256;hpb=ce62aafc76466fa8f4245b95a0cef60021558f65;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 4588c08..18a2e39 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -85,13 +85,21 @@
   notes = {velocity verlet integration algorithm equation of motion}
 }
 
-@Article{berendsen84,
+@article{berendsen:3684,
+  author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren
+            and A. DiNola and J. R. Haak},
+  collaboration = {},
   title = {Molecular dynamics with coupling to an external bath},
-  author = {H. J. C. Berendsen},
+  publisher = {AIP},
   year = {1984},
-  journal = {J. Chem. Phys.},
+  journal = {The Journal of Chemical Physics},
   volume = {81},
-  pages = {3684},
+  number = {8},
+  pages = {3684-3690},
+  keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
+              COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS},
+  url = {http://link.aip.org/link/?JCP/81/3684/1},
+  doi = {10.1063/1.448118},
   notes = {berendsen thermostat barostat}
 }
 
@@ -146,6 +154,17 @@
           pair correlation of amorphous sic, md result analyze}
 }
 
+@Article{batra87,
+  title = {SiC/Si heteroepitaxial growth},
+  author = {M. Kitabatake},
+  journal = {Thin Solid Films},
+  volume = {369},
+  pages = {257--264},
+  numpages = {8},
+  year = {2000},
+  notes = {md simulation, sic si heteroepitaxy, mbe}
+}
+
 % tight binding
 
 @Article{tang97,
@@ -266,8 +285,8 @@
 @Article{strane96,
   title = {Carbon incorporation into Si at high concentrations
            by ion implantation and solid phase epitaxy},
-  author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
-            J.K. Watanabe, J. W. Mayer},
+  author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
+            J. K. Watanabe and J. W. Mayer},
   journal = {J. Appl. Phys.},
   volume = {79},
   pages = {637},
@@ -277,12 +296,50 @@
   notes = {strained silicon, carbon supersaturation}
 }
 
+% sic formation mechanism
+
+@article{werner97,
+  author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
+  title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
+  publisher = {AIP},
+  year = {1997},
+  journal = {Applied Physics Letters},
+  volume = {70},
+  number = {2},
+  pages = {252-254},
+  keywords = {silicon; ion implantation; carbon; crystal defects;
+              transmission electron microscopy; annealing;
+	      positron annihilation; secondary ion mass spectroscopy;
+	      buried layers; precipitation},
+  url = {http://link.aip.org/link/?APL/70/252/1},
+  doi = {10.1063/1.118381},
+  notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
+}
+
+@article{strane94,
+  author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
+            J. K. Watanabe and J. W. Mayer},
+  collaboration = {},
+  title = {Precipitation and relaxation in strained
+           Si[sub 1 - y]C[sub y]/Si heterostructures},
+  publisher = {AIP},
+  year = {1994},
+  journal = {Journal of Applied Physics},
+  volume = {76},
+  number = {6},
+  pages = {3656-3668},
+  keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
+  url = {http://link.aip.org/link/?JAP/76/3656/1},
+  doi = {10.1063/1.357429},
+  notes = {strained si-c to 3c-sic, carbon nucleation + refs}
+}
+
 % properties sic
 
 @Article{edgar92,
   title = {Prospects for device implementation of wide band gap semiconductors},
   author = {J. H. Edgar},
-  journal = {J. Matter. Res.},
+  journal = {J. Mater. Res.},
   volume = {7},
   pages = {235},
   year = {1992},