X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=1d44eb2a43ef82ce05d4dd078e348898e0e25332;hb=a0798487dcdcfa5bcb019a03daa57c8afc298edc;hp=bd00b0f12f1f003c251ca2d8fcb8e2afb7af7cdb;hpb=5aca50e47a686f19f92f88aa7dfff05ab34175b1;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index bd00b0f..1d44eb2 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,16 @@ notes = "derivation of albe bond order formalism", } +@Article{bean71, + author = "A. R. Bean and R. C. Newman", + title = "", + journal = "J. Phys. Chem. Solids", + volume = "32", + pages = "1211", + year = "1971", + notes = "experimental solubility data of carbon in silicon", +} + @Article{capano97, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", @@ -49,6 +59,17 @@ year = "1997", } +@Article{fischer90, + author = "G. R. Fisher and P. Barnes", + title = "Towards a unified view of polytypism in silicon + carbide", + journal = "Philosophical Magazine Part B", + volume = "61", + pages = "217--236", + year = "1990", + notes = "sic polytypes", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -75,6 +96,22 @@ relation (uer), minimum range model (mrm)", } +@Article{balamane92, + title = "Comparative study of silicon empirical interatomic + potentials", + author = "H. Balamane and T. Halicioglu and W. A. Tiller", + journal = "Phys. Rev. B", + volume = "46", + number = "4", + pages = "2250--2279", + numpages = "29", + year = "1992", + month = jul, + doi = "10.1103/PhysRevB.46.2250", + publisher = "American Physical Society", + notes = "comparison of classical potentials for si", +} + @Article{koster2002, title = "Stress relaxation in $a-Si$ induced by ion bombardment", @@ -107,6 +144,16 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{moissan04, + author = "Henri Moissan", + title = "Nouvelles recherches sur la météorité de Cañon + Diablo", + journal = "Comptes rendus de l'Académie des Sciences", + volume = "139", + pages = "773--786", + year = "1904", +} + @Book{park98, author = "Y. S. Park", title = "Si{C} Materials and Devices", @@ -353,7 +400,8 @@ doi = "10.1103/PhysRevB.66.195214", publisher = "American Physical Society", notes = "c in c-si, diffusion, interstitial configuration + - links", + links, interaction of carbon and silicon + interstitials", } @Article{leung99, @@ -369,13 +417,14 @@ month = sep, doi = "10.1103/PhysRevLett.83.2351", publisher = "American Physical Society", - notes = "nice images of the defects", + notes = "nice images of the defects, si defect overview + + refs", } -@Article{capazd94, +@Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos", + author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -389,6 +438,23 @@ dumbbell", } +@Article{dal_pino93, + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. Dal Pino and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", +} + @Article{car84, title = "Microscopic Theory of Atomic Diffusion Mechanisms in Silicon", @@ -440,6 +506,21 @@ notes = "mc md, strain compensation in si ge by c insertion", } +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Communications", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -470,6 +551,21 @@ month = sep, doi = "10.1103/PhysRevB.42.5759", publisher = "American Physical Society", + notes = "carbon diffusion in silicon", +} + +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semiconductor Science and Technology", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", } @Article{strane96, @@ -768,6 +864,20 @@ publisher = "American Physical Society", } +@Article{tersoff90, + title = "Carbon defects and defect reactions in silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "64", + number = "15", + pages = "1757--1760", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevLett.64.1757", + publisher = "American Physical Society", +} + @Article{fahey89, title = "Point defects and dopant diffusion in silicon", author = "P. M. Fahey and P. B. Griffin and J. D. Plummer", @@ -1079,6 +1189,25 @@ and J. M. Poate", } +@Article{stolk97, + author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and + D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and + M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T. + E. Haynes", + collaboration = "", + title = "Physical mechanisms of transient enhanced dopant + diffusion in ion-implanted silicon", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "81", + number = "9", + pages = "6031--6050", + URL = "http://link.aip.org/link/?JAP/81/6031/1", + doi = "10.1063/1.364452", + notes = "ted, transient enhanced diffusion, c silicon trap", +} + @Article{powell94, author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", collaboration = "", @@ -1235,3 +1364,260 @@ doi = "10.1063/1.366364", notes = "charge transport in strained si", } + +@Article{PhysRevB.69.155214, + title = "Carbon-mediated aggregation of self-interstitials in + silicon: {A} large-scale molecular dynamics study", + author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", + journal = "Phys. Rev. B", + volume = "69", + number = "15", + pages = "155214", + numpages = "8", + year = "2004", + month = apr, + doi = "10.1103/PhysRevB.69.155214", + publisher = "American Physical Society", + notes = "simulation using promising tersoff reparametrization", +} + +@Article{tang95, + title = "Atomistic simulation of thermomechanical properties of + \beta{}-Si{C}", + author = "Meijie Tang and Sidney Yip", + journal = "Phys. Rev. B", + volume = "52", + number = "21", + pages = "15150--15159", + numpages = "9", + year = "1995", + month = dec, + doi = "10.1103/PhysRevB.52.15150", + publisher = "American Physical Society", + notes = "promising tersoff reparametrization", +} + +@Article{barkema96, + title = "Event-Based Relaxation of Continuous Disordered + Systems", + author = "G. T. Barkema and Normand Mousseau", + journal = "Phys. Rev. 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Willaime", + collaboration = "", + title = "Some improvements of the activation-relaxation + technique method for finding transition pathways on + potential energy surfaces", + publisher = "AIP", + year = "2009", + journal = "The Journal of Chemical Physics", + volume = "130", + number = "11", + eid = "114711", + numpages = "6", + pages = "114711", + keywords = "eigenvalues and eigenfunctions; iron; potential energy + surfaces; vacancies (crystal)", + URL = "http://link.aip.org/link/?JCP/130/114711/1", + doi = "10.1063/1.3088532", + notes = "improvements to art, refs for methods to find + transition pathways", +} + +@Article{parrinello81, + author = "M. Parrinello and A. 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B", + volume = "58", + number = "5", + pages = "2539--2550", + numpages = "11", + year = "1998", + month = aug, + doi = "10.1103/PhysRevB.58.2539", + publisher = "American Physical Society", +} + +@Article{parcas_md, + title = "{PARCAS} molecular dynamics code", + author = "K. Nordlund", + year = "2008", +} + +@Article{voter97, + title = "Hyperdynamics: Accelerated Molecular Dynamics of + Infrequent Events", + author = "Arthur F. Voter", + journal = "Phys. Rev. Lett.", + volume = "78", + number = "20", + pages = "3908--3911", + numpages = "3", + year = "1997", + month = may, + doi = "10.1103/PhysRevLett.78.3908", + publisher = "American Physical Society", + notes = "hyperdynamics, accelerated md", +} + +@Article{voter97_2, + author = "Arthur F. Voter", + collaboration = "", + title = "A method for accelerating the molecular dynamics + simulation of infrequent events", + publisher = "AIP", + year = "1997", + journal = "The Journal of Chemical Physics", + volume = "106", + number = "11", + pages = "4665--4677", + keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM + TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY; + SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential + energy functions; surface diffusion; reaction kinetics + theory; potential energy surfaces", + URL = "http://link.aip.org/link/?JCP/106/4665/1", + doi = "10.1063/1.473503", + notes = "improved hyperdynamics md", +} + +@Article{sorensen2000, + author = "Mads R. S\o rensen and Arthur F. Voter", + collaboration = "", + title = "Temperature-accelerated dynamics for simulation of + infrequent events", + publisher = "AIP", + year = "2000", + journal = "The Journal of Chemical Physics", + volume = "112", + number = "21", + pages = "9599--9606", + keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES; + MOLECULAR DYNAMICS METHOD; surface diffusion", + URL = "http://link.aip.org/link/?JCP/112/9599/1", + doi = "10.1063/1.481576", + notes = "temperature accelerated dynamics, tad", +} + +@Article{voter98, + title = "Parallel replica method for dynamics of infrequent + events", + author = "Arthur F. Voter", + journal = "Phys. Rev. B", + volume = "57", + number = "22", + pages = "R13985--R13988", + numpages = "3", + year = "1998", + month = jun, + doi = "10.1103/PhysRevB.57.R13985", + publisher = "American Physical Society", + notes = "parallel replica method, accelerated md", +} + +@Article{wu99, + author = "Xiongwu Wu and Shaomeng Wang", + collaboration = "", + title = "Enhancing systematic motion in molecular dynamics + simulation", + publisher = "AIP", + year = "1999", + journal = "The Journal of Chemical Physics", + volume = "110", + number = "19", + pages = "9401--9410", + keywords = "molecular dynamics method; argon; Lennard-Jones + potential; crystallisation; liquid theory", + URL = "http://link.aip.org/link/?JCP/110/9401/1", + doi = "10.1063/1.478948", + notes = "self guided md, sgmd, accelerated md, enhancing + systematic motion", +} + +@Article{choudhary05, + author = "Devashish Choudhary and Paulette Clancy", + collaboration = "", + title = "Application of accelerated molecular dynamics schemes + to the production of amorphous silicon", + publisher = "AIP", + year = "2005", + journal = "The Journal of Chemical Physics", + volume = "122", + number = "15", + eid = "154509", + numpages = "8", + pages = "154509", + keywords = "molecular dynamics method; silicon; glass structure; + amorphous semiconductors", + URL = "http://link.aip.org/link/?JCP/122/154509/1", + doi = "10.1063/1.1878733", + notes = "explanation of sgmd and hyper md, applied to amorphous + silicon", +}