X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=2ca9532e2551caef337615a819a511a2f0002051;hb=489cd7fe0c6c2d26b1025f31ec20670867d87259;hp=dc04f4694f3bf6afa3bb497514df7b4fff8b2579;hpb=9971d807e145dce2be91fff25a42b08e062935fe;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index dc04f46..2ca9532 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -92,6 +92,22 @@ carbon, both mechanisms explained + refs", } +@Article{skorupa96, + title = "Carbon-mediated effects in silicon and in + silicon-related materials", + journal = "Materials Chemistry and Physics", + volume = "44", + number = "2", + pages = "101--143", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/0254-0584(95)01673-I", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982", + author = "W. Skorupa and R. A. Yankov", + notes = "review of silicon carbon compound", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -1257,9 +1273,60 @@ URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c", author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase and S. Nishio and K. Yasuda and Y. Ishigami", + notes = "gan on 3c-sic, focus on ibs of 3c-sic", +} + +@Article{yamamoto04, + title = "Organometallic vapor phase epitaxial growth of Ga{N} + on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion + implantation into Si(1 1 1) substrate", + journal = "Journal of Crystal Growth", + volume = "261", + number = "2-3", + pages = "266--270", + year = "2004", + note = "Proceedings of the 11th Biennial (US) Workshop on + Organometallic Vapor Phase Epitaxy (OMVPE)", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2003.11.041", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166", + author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M. + Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito", notes = "gan on 3c-sic", } +@Article{liu_l02, + title = "Substrates for gallium nitride epitaxy", + journal = "Materials Science and Engineering: R: Reports", + volume = "37", + number = "3", + pages = "61--127", + year = "2002", + note = "", + ISSN = "0927-796X", + doi = "DOI: 10.1016/S0927-796X(02)00008-6", + URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401", + author = "L. Liu and J. H. Edgar", + notes = "gan substrates", +} + +@Article{takeuchi91, + title = "Growth of single crystalline Ga{N} film on Si + substrate using 3{C}-Si{C} as an intermediate layer", + journal = "Journal of Crystal Growth", + volume = "115", + number = "1-4", + pages = "634--638", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90817-O", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140", + author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa + Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki", + notes = "gan on 3c-sic (first time?)", +} + @Article{alder57, author = "B. J. Alder and T. E. Wainwright", title = "Phase Transition for a Hard Sphere System", @@ -1424,18 +1491,6 @@ notes = "sic intro, properties", } -@Article{neudeck95, - author = "P. G. Neudeck", - title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} - {ELECTRONICS} {TECHNOLOGY}", - journal = "Journal of Electronic Materials", - year = "1995", - volume = "24", - number = "4", - pages = "283--288", - month = apr, -} - @Article{foo, author = "Noch Unbekannt", title = "How to find references", @@ -1537,6 +1592,69 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{tairov81, + title = "General principles of growing large-size single + crystals of various silicon carbide polytypes", + journal = "Journal of Crystal Growth", + volume = "52", + number = "Part 1", + pages = "146--150", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90184-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529", + author = "Yu.M. Tairov and V. F. Tsvetkov", +} + +@Article{barrett91, + title = "Si{C} boule growth by sublimation vapor transport", + journal = "Journal of Crystal Growth", + volume = "109", + number = "1-4", + pages = "17--23", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90152-U", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1", + author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and + R. H. Hopkins and W. J. Choyke", +} + +@Article{barrett93, + title = "Growth of large Si{C} single crystals", + journal = "Journal of Crystal Growth", + volume = "128", + number = "1-4", + pages = "358--362", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90348-Z", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c", + author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and + R. H. Hopkins and P. G. McMullin and R. C. Clarke and + W. J. Choyke", +} + +@Article{stein93, + title = "Control of polytype formation by surface energy + effects during the growth of Si{C} monocrystals by the + sublimation method", + journal = "Journal of Crystal Growth", + volume = "131", + number = "1-2", + pages = "71--74", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90397-F", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d", + author = "R. A. Stein and P. Lanig", + notes = "6h and 4h, sublimation technique", +} + @Article{nishino83, author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. Will", @@ -1913,7 +2031,7 @@ month = may, doi = "10.1103/PhysRevLett.72.3578", publisher = "American Physical Society", - notes = "high c concentration in si, heterostructure, starined + notes = "high c concentration in si, heterostructure, strained si, dft", } @@ -2156,7 +2274,7 @@ } @Article{sorensen2000, - author = "Mads R. S\o rensen and Arthur F. Voter", + author = "Mads R. S{\o }rensen and Arthur F. Voter", collaboration = "", title = "Temperature-accelerated dynamics for simulation of infrequent events", @@ -2453,6 +2571,24 @@ notes = "dislocations in diamond lattice", } +@Article{deguchi92, + title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon + Ion `Hot' Implantation", + author = "Masahiro Deguchi and Makoto Kitabatake and Takashi + Hirao and Naoki Arai and Tomio Izumi", + journal = "Japanese Journal of Applied Physics", + volume = "31", + number = "Part 1, No. 2A", + pages = "343--347", + numpages = "4", + year = "1992", + URL = "http://jjap.ipap.jp/link?JJAP/31/343/", + doi = "10.1143/JJAP.31.343", + publisher = "The Japan Society of Applied Physics", + notes = "c-c bonds in c implanted si, hot implantation + efficiency, c-c hard to break by thermal annealing", +} + @Article{eichhorn99, author = "F. Eichhorn and N. Schell and W. Matz and R. K{\"{o}}gler", @@ -2493,7 +2629,7 @@ URL = "http://link.aip.org/link/?JAP/91/1287/1", doi = "10.1063/1.1428105", notes = "3c-sic alignement to si host in ibs depending on - temperature, might explain c int to c sub trafo", + temperature, might explain c into c sub trafo", } @Article{lucas10, @@ -2953,10 +3089,6 @@ doi = "DOI: 10.1016/S0168-583X(00)00542-5", URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577", author = "W. J. Weber and W. Jiang and S. Thevuthasan", - keywords = "Amorphization", - keywords = "Irradiation effects", - keywords = "Thermal recovery", - keywords = "Silicon carbide", } @Article{bockstedte03, @@ -2991,3 +3123,234 @@ doi = "10.1103/PhysRevB.68.155208", publisher = "American Physical Society", } + +@Article{losev27, + journal = "Telegrafiya i Telefoniya bez Provodov", + volume = "44", + pages = "485--494", + year = "1927", + author = "O. V. Lossev", +} + +@Article{losev28, + title = "Luminous carborundum detector and detection effect and + oscillations with crystals", + journal = "Philosophical Magazine Series 7", + volume = "6", + number = "39", + pages = "1024--1044", + year = "1928", + URL = "http://www.informaworld.com/10.1080/14786441108564683", + author = "O. V. Lossev", +} + +@Article{losev29, + journal = "Physik. Zeitschr.", + volume = "30", + pages = "920--923", + year = "1929", + author = "O. V. Lossev", +} + +@Article{losev31, + journal = "Physik. Zeitschr.", + volume = "32", + pages = "692--696", + year = "1931", + author = "O. V. Lossev", +} + +@Article{losev33, + journal = "Physik. Zeitschr.", + volume = "34", + pages = "397--403", + year = "1933", + author = "O. V. Lossev", +} + +@Article{round07, + title = "A note on carborundum", + journal = "Electrical World", + volume = "49", + pages = "308", + year = "1907", + author = "H. J. Round", +} + +@Article{vashishath08, + title = "Recent trends in silicon carbide device research", + journal = "Mj. Int. J. Sci. Tech.", + volume = "2", + number = "03", + pages = "444--470", + year = "2008", + author = "Munish Vashishath and Ashoke K. Chatterjee", + URL = "http://www.doaj.org/doaj?func=abstract&id=286746", + notes = "sic polytype electronic properties", +} + +@Article{nelson69, + author = "W. E. Nelson and F. A. Halden and A. Rosengreen", + collaboration = "", + title = "Growth and Properties of beta-Si{C} Single Crystals", + publisher = "AIP", + year = "1966", + journal = "Journal of Applied Physics", + volume = "37", + number = "1", + pages = "333--336", + URL = "http://link.aip.org/link/?JAP/37/333/1", + doi = "10.1063/1.1707837", + notes = "sic melt growth", +} + +@Article{arkel25, + author = "A. E. van Arkel and J. H. de Boer", + title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium- + und Thoriummetall", + publisher = "WILEY-VCH Verlag GmbH", + year = "1925", + journal = "Z. Anorg. Chem.", + volume = "148", + pages = "345--350", + URL = "http://dx.doi.org/10.1002/zaac.19251480133", + doi = "10.1002/zaac.19251480133", + notes = "van arkel apparatus", +} + +@Article{moers31, + author = "K. Moers", + year = "1931", + journal = "Z. Anorg. Chem.", + volume = "198", + pages = "293", + notes = "sic by van arkel apparatus, pyrolitical vapor growth + process", +} + +@Article{kendall53, + author = "J. T. Kendall", + title = "Electronic Conduction in Silicon Carbide", + publisher = "AIP", + year = "1953", + journal = "The Journal of Chemical Physics", + volume = "21", + number = "5", + pages = "821--827", + URL = "http://link.aip.org/link/?JCP/21/821/1", + notes = "sic by van arkel apparatus, pyrolitical vapor growth + process", +} + +@Article{lely55, + author = "J. A. Lely", + year = "1955", + journal = "Ber. Deut. Keram. Ges.", + volume = "32", + pages = "229", + notes = "lely sublimation growth process", +} + +@Article{knippenberg63, + author = "W. F. Knippenberg", + year = "1963", + journal = "Philips Res. Repts.", + volume = "18", + pages = "161", + notes = "acheson process", +} + +@Article{hoffmann82, + author = "L. Hoffmann and G. Ziegler and D. Theis and C. + Weyrich", + collaboration = "", + title = "Silicon carbide blue light emitting diodes with + improved external quantum efficiency", + publisher = "AIP", + year = "1982", + journal = "Journal of Applied Physics", + volume = "53", + number = "10", + pages = "6962--6967", + keywords = "light emitting diodes; silicon carbides; quantum + efficiency; visible radiation; experimental data; + epitaxy; fabrication; medium temperature; layers; + aluminium; nitrogen; substrates; pn junctions; + electroluminescence; spectra; current density; + optimization", + URL = "http://link.aip.org/link/?JAP/53/6962/1", + doi = "10.1063/1.330041", + notes = "blue led, sublimation process", +} + +@Article{neudeck95, + author = "Philip Neudeck", + affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark + Road 44135 Cleveland OH", + title = "Progress in silicon carbide semiconductor electronics + technology", + journal = "Journal of Electronic Materials", + publisher = "Springer Boston", + ISSN = "0361-5235", + keyword = "Chemistry and Materials Science", + pages = "283--288", + volume = "24", + issue = "4", + URL = "http://dx.doi.org/10.1007/BF02659688", + note = "10.1007/BF02659688", + year = "1995", + notes = "sic data, advantages of 3c sic", +} + +@Article{bhatnagar93, + author = "M. Bhatnagar and B. J. Baliga", + journal = "Electron Devices, IEEE Transactions on", + title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power + devices", + year = "1993", + month = mar, + volume = "40", + number = "3", + pages = "645--655", + keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky + rectifiers;Si;SiC;breakdown voltages;drift region + properties;output characteristics;power MOSFETs;power + semiconductor devices;switching characteristics;thermal + analysis;Schottky-barrier diodes;electric breakdown of + solids;insulated gate field effect transistors;power + transistors;semiconductor materials;silicon;silicon + compounds;solid-state rectifiers;thermal analysis;", + doi = "10.1109/16.199372", + ISSN = "0018-9383", + notes = "comparison 3c 6h sic and si devices", +} + +@Article{neudeck94, + author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. + A. Powell and C. S. Salupo and L. G. Matus", + journal = "Electron Devices, IEEE Transactions on", + title = "Electrical properties of epitaxial 3{C}- and + 6{H}-Si{C} p-n junction diodes produced side-by-side on + 6{H}-Si{C} substrates", + year = "1994", + month = may, + volume = "41", + number = "5", + pages = "826--835", + keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400 + C;6H-SiC layers;6H-SiC substrates;CVD + process;SiC;chemical vapor deposition;doping;electrical + properties;epitaxial layers;light + emission;low-tilt-angle 6H-SiC substrates;p-n junction + diodes;polytype;rectification characteristics;reverse + leakage current;reverse voltages;temperature;leakage + currents;power electronics;semiconductor + diodes;semiconductor epitaxial layers;semiconductor + growth;semiconductor materials;silicon + compounds;solid-state rectifiers;substrates;vapour + phase epitaxial growth;", + doi = "10.1109/16.285038", + ISSN = "0018-9383", + notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h + substrate", +}