X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=2e0a7f927bf0657beb9562f81b1c236ba354597b;hb=fc1ac9421aa60a0e24733bb2f5873e8c0964b080;hp=f1055a097e8324a80e3574f786819590d2aaee03;hpb=505ccde9c1e1c7c3a0975862ffab3eef0645232a;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index f1055a0..2e0a7f9 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -49,6 +49,17 @@ year = "1997", } +@Article{fischer90, + author = "G. R. Fisher and P. Barnes", + title = "Towards a unified view of polytypism in silicon + carbide", + journal = "Philosophical Magazine Part B", + volume = "61", + pages = "217--236", + year = "1990", + notes = "sic polytypes", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -107,6 +118,16 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{moissan04, + author = "Henri Moissan", + title = "Nouvelles recherches sur la météorité de Cañon + Diablo", + journal = "Comptes rendus de l'Académie des Sciences", + volume = "139", + pages = "773--786", + year = "1904", +} + @Book{park98, author = "Y. S. Park", title = "Si{C} Materials and Devices", @@ -623,6 +644,22 @@ notes = "two-step implantation process", } +@Article{lindner99_2, + title = "Mechanisms in the ion beam synthesis of Si{C} layers + in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "148", + number = "1-4", + pages = "528--533", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00787-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", + author = "J. K. N. Lindner and B. Stritzker", +} + @Article{lindner01, title = "Ion beam synthesis of buried Si{C} layers in silicon: Basic physical processes", @@ -1024,3 +1061,230 @@ doi = "10.1063/1.1730236", notes = "solubility of c in c-si", } + +@Article{cowern96, + author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and + F. W. Saris and W. Vandervorst", + collaboration = "", + title = "Role of {C} and {B} clusters in transient diffusion of + {B} in silicon", + publisher = "AIP", + year = "1996", + journal = "Applied Physics Letters", + volume = "68", + number = "8", + pages = "1150--1152", + keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING; + DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS; + SILICON", + URL = "http://link.aip.org/link/?APL/68/1150/1", + doi = "10.1063/1.115706", + notes = "suppression of transient enhanced diffusion (ted)", +} + +@Article{stolk95, + title = "Implantation and transient boron diffusion: the role + of the silicon self-interstitial", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "96", + number = "1-2", + pages = "187--195", + year = "1995", + note = "Selected Papers of the Tenth International Conference + on Ion Implantation Technology (IIT '94)", + ISSN = "0168-583X", + doi = "DOI: 10.1016/0168-583X(94)00481-1", + URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c", + author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham + and J. M. Poate", +} + +@Article{powell94, + author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", + collaboration = "", + title = "Formation of beta-Si{C} nanocrystals by the relaxation + of Si[sub 1 - y]{C}[sub y] random alloy layers", + publisher = "AIP", + year = "1994", + journal = "Applied Physics Letters", + volume = "64", + number = "3", + pages = "324--326", + keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS; + EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING; + TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS; + SYNTHESIS", + URL = "http://link.aip.org/link/?APL/64/324/1", + doi = "10.1063/1.111195", + notes = "beta sic nano crystals in si, mbe, annealing", +} + +@Article{soref91, + author = "Richard A. Soref", + collaboration = "", + title = "Optical band gap of the ternary semiconductor Si[sub 1 + - x - y]Ge[sub x]{C}[sub y]", + publisher = "AIP", + year = "1991", + journal = "Journal of Applied Physics", + volume = "70", + number = "4", + pages = "2470--2472", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP; + OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS; + TERNARY ALLOYS", + URL = "http://link.aip.org/link/?JAP/70/2470/1", + doi = "10.1063/1.349403", + notes = "band gap of strained si by c", +} + +@Article{kasper91, + author = "E Kasper", + title = "Superlattices of group {IV} elements, a new + possibility to produce direct band gap material", + journal = "Physica Scripta", + volume = "T35", + pages = "232--236", + URL = "http://stacks.iop.org/1402-4896/T35/232", + year = "1991", + notes = "superlattices, convert indirect band gap into a + quasi-direct one", +} + +@Article{osten99, + author = "H. J. Osten and J. Griesche and S. Scalese", + collaboration = "", + title = "Substitutional carbon incorporation in epitaxial + Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by + molecular beam epitaxy", + publisher = "AIP", + year = "1999", + journal = "Applied Physics Letters", + volume = "74", + number = "6", + pages = "836--838", + keywords = "molecular beam epitaxial growth; semiconductor growth; + wide band gap semiconductors; interstitials; silicon + compounds", + URL = "http://link.aip.org/link/?APL/74/836/1", + doi = "10.1063/1.123384", + notes = "substitutional c in si", +} + +@Article{hohenberg64, + title = "Inhomogeneous Electron Gas", + author = "P. Hohenberg and W. Kohn", + journal = "Phys. Rev.", + volume = "136", + number = "3B", + pages = "B864--B871", + numpages = "7", + year = "1964", + month = nov, + doi = "10.1103/PhysRev.136.B864", + publisher = "American Physical Society", + notes = "density functional theory, dft", +} + +@Article{kohn65, + title = "Self-Consistent Equations Including Exchange and + Correlation Effects", + author = "W. Kohn and L. J. Sham", + journal = "Phys. Rev.", + volume = "140", + number = "4A", + pages = "A1133--A1138", + numpages = "5", + year = "1965", + month = nov, + doi = "10.1103/PhysRev.140.A1133", + publisher = "American Physical Society", + notes = "dft, exchange and correlation", +} + +@Article{ruecker94, + title = "Strain-stabilized highly concentrated pseudomorphic + $Si1-x$$Cx$ layers in Si", + author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H. + J. Osten", + journal = "Phys. Rev. Lett.", + volume = "72", + number = "22", + pages = "3578--3581", + numpages = "3", + year = "1994", + month = may, + doi = "10.1103/PhysRevLett.72.3578", + publisher = "American Physical Society", + notes = "high c concentration in si, heterostructure, starined + si, dft", +} + +@Article{chang05, + title = "Electron Transport Model for Strained Silicon-Carbon + Alloy", + author = "Shu-Tong Chang and Chung-Yi Lin", + journal = "Japanese Journal of Applied Physics", + volume = "44", + number = "4B", + pages = "2257--2262", + numpages = "5", + year = "2005", + URL = "http://jjap.ipap.jp/link?JJAP/44/2257/", + doi = "10.1143/JJAP.44.2257", + publisher = "The Japan Society of Applied Physics", + notes = "enhance of electron mobility in starined si", +} + +@Article{osten97, + author = "H. J. Osten and P. Gaworzewski", + collaboration = "", + title = "Charge transport in strained Si[sub 1 - y]{C}[sub y] + and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on + Si(001)", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "82", + number = "10", + pages = "4977--4981", + keywords = "silicon compounds; Ge-Si alloys; wide band gap + semiconductors; semiconductor epitaxial layers; carrier + density; Hall mobility; interstitials; defect states", + URL = "http://link.aip.org/link/?JAP/82/4977/1", + doi = "10.1063/1.366364", + notes = "charge transport in strained si", +} + +@Article{PhysRevB.69.155214, + title = "Carbon-mediated aggregation of self-interstitials in + silicon: {A} large-scale molecular dynamics study", + author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", + journal = "Phys. Rev. B", + volume = "69", + number = "15", + pages = "155214", + numpages = "8", + year = "2004", + month = apr, + doi = "10.1103/PhysRevB.69.155214", + publisher = "American Physical Society", + notes = "simulation using promising tersoff reparametrization", +} + +@Article{PhysRevB.52.15150, + title = "Atomistic simulation of thermomechanical properties of + \beta{}-Si{C}", + author = "Meijie Tang and Sidney Yip", + journal = "Phys. Rev. B", + volume = "52", + number = "21", + pages = "15150--15159", + numpages = "9", + year = "1995", + month = dec, + doi = "10.1103/PhysRevB.52.15150", + publisher = "American Physical Society", + notes = "promising tersoff reparametrization", +}