X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=37dc288bab5bef124a2350c32759ea4f94348743;hb=2b030e78f7f74881964d0883c4c2c25bf62b33f7;hp=6a053fc4b70a4dfd3f8713309e34ba12e94e30a5;hpb=aa2944a32f7ec0d35baf1f60ebc60700eb877f28;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 6a053fc..37dc288 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1491,18 +1491,6 @@ notes = "sic intro, properties", } -@Article{neudeck95, - author = "P. G. Neudeck", - title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} - {ELECTRONICS} {TECHNOLOGY}", - journal = "Journal of Electronic Materials", - year = "1995", - volume = "24", - number = "4", - pages = "283--288", - month = apr, -} - @Article{foo, author = "Noch Unbekannt", title = "How to find references", @@ -1604,6 +1592,69 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{tairov81, + title = "General principles of growing large-size single + crystals of various silicon carbide polytypes", + journal = "Journal of Crystal Growth", + volume = "52", + number = "Part 1", + pages = "146--150", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90184-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529", + author = "Yu.M. Tairov and V. F. Tsvetkov", +} + +@Article{barrett91, + title = "Si{C} boule growth by sublimation vapor transport", + journal = "Journal of Crystal Growth", + volume = "109", + number = "1-4", + pages = "17--23", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90152-U", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1", + author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and + R. H. Hopkins and W. J. Choyke", +} + +@Article{barrett93, + title = "Growth of large Si{C} single crystals", + journal = "Journal of Crystal Growth", + volume = "128", + number = "1-4", + pages = "358--362", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90348-Z", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c", + author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and + R. H. Hopkins and P. G. McMullin and R. C. Clarke and + W. J. Choyke", +} + +@Article{stein93, + title = "Control of polytype formation by surface energy + effects during the growth of Si{C} monocrystals by the + sublimation method", + journal = "Journal of Crystal Growth", + volume = "131", + number = "1-2", + pages = "71--74", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90397-F", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d", + author = "R. A. Stein and P. Lanig", + notes = "6h and 4h, sublimation technique", +} + @Article{nishino83, author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. Will", @@ -2335,6 +2386,19 @@ metastable", } +@Article{chaussende07, + author = "D. Chaussende and P. J. Wellmann and M. Pons", + title = "Status of Si{C} bulk growth processes", + journal = "Journal of Physics D: Applied Physics", + volume = "40", + number = "20", + pages = "6150", + URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02", + year = "2007", + notes = "review of sic single crystal growth methods, process + modelling", +} + @Article{feynman39, title = "Forces in Molecules", author = "R. P. Feynman", @@ -3200,3 +3264,125 @@ notes = "lely sublimation growth process", } +@Article{knippenberg63, + author = "W. F. Knippenberg", + year = "1963", + journal = "Philips Res. Repts.", + volume = "18", + pages = "161", + notes = "acheson process", +} + +@Article{hoffmann82, + author = "L. Hoffmann and G. Ziegler and D. Theis and C. + Weyrich", + collaboration = "", + title = "Silicon carbide blue light emitting diodes with + improved external quantum efficiency", + publisher = "AIP", + year = "1982", + journal = "Journal of Applied Physics", + volume = "53", + number = "10", + pages = "6962--6967", + keywords = "light emitting diodes; silicon carbides; quantum + efficiency; visible radiation; experimental data; + epitaxy; fabrication; medium temperature; layers; + aluminium; nitrogen; substrates; pn junctions; + electroluminescence; spectra; current density; + optimization", + URL = "http://link.aip.org/link/?JAP/53/6962/1", + doi = "10.1063/1.330041", + notes = "blue led, sublimation process", +} + +@Article{neudeck95, + author = "Philip Neudeck", + affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark + Road 44135 Cleveland OH", + title = "Progress in silicon carbide semiconductor electronics + technology", + journal = "Journal of Electronic Materials", + publisher = "Springer Boston", + ISSN = "0361-5235", + keyword = "Chemistry and Materials Science", + pages = "283--288", + volume = "24", + issue = "4", + URL = "http://dx.doi.org/10.1007/BF02659688", + note = "10.1007/BF02659688", + year = "1995", + notes = "sic data, advantages of 3c sic", +} + +@Article{bhatnagar93, + author = "M. Bhatnagar and B. J. Baliga", + journal = "Electron Devices, IEEE Transactions on", + title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power + devices", + year = "1993", + month = mar, + volume = "40", + number = "3", + pages = "645--655", + keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky + rectifiers;Si;SiC;breakdown voltages;drift region + properties;output characteristics;power MOSFETs;power + semiconductor devices;switching characteristics;thermal + analysis;Schottky-barrier diodes;electric breakdown of + solids;insulated gate field effect transistors;power + transistors;semiconductor materials;silicon;silicon + compounds;solid-state rectifiers;thermal analysis;", + doi = "10.1109/16.199372", + ISSN = "0018-9383", + notes = "comparison 3c 6h sic and si devices", +} + +@Article{neudeck94, + author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. + A. Powell and C. S. Salupo and L. G. Matus", + journal = "Electron Devices, IEEE Transactions on", + title = "Electrical properties of epitaxial 3{C}- and + 6{H}-Si{C} p-n junction diodes produced side-by-side on + 6{H}-Si{C} substrates", + year = "1994", + month = may, + volume = "41", + number = "5", + pages = "826--835", + keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400 + C;6H-SiC layers;6H-SiC substrates;CVD + process;SiC;chemical vapor deposition;doping;electrical + properties;epitaxial layers;light + emission;low-tilt-angle 6H-SiC substrates;p-n junction + diodes;polytype;rectification characteristics;reverse + leakage current;reverse voltages;temperature;leakage + currents;power electronics;semiconductor + diodes;semiconductor epitaxial layers;semiconductor + growth;semiconductor materials;silicon + compounds;solid-state rectifiers;substrates;vapour + phase epitaxial growth;", + doi = "10.1109/16.285038", + ISSN = "0018-9383", + notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h + substrate", +} + +@Article{schulze98, + author = "N. Schulze and D. L. Barrett and G. Pensl", + collaboration = "", + title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C} + single crystals by physical vapor transport", + publisher = "AIP", + year = "1998", + journal = "Applied Physics Letters", + volume = "72", + number = "13", + pages = "1632--1634", + keywords = "silicon compounds; semiconductor materials; + semiconductor growth; crystal growth from vapour; + photoluminescence; Hall mobility", + URL = "http://link.aip.org/link/?APL/72/1632/1", + doi = "10.1063/1.121136", + notes = "micropipe free 6h-sic pvt growth", +}