X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=4828a7b58d5ef1abd6b769c9df0a7fe3f8ade32d;hb=5a0bd5c3262f68a13c779d098b8dfa4ff171384a;hp=40948ff308d98f0705e0fb32859dc870474f215c;hpb=0b1a742b3bc099091302913f9b6898ea6b1666aa;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 40948ff..4828a7b 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -41,12 +41,17 @@ } @Article{bean71, - author = "A. R. Bean and R. C. Newman", - title = "", - journal = "J. Phys. Chem. Solids", + title = "The solubility of carbon in pulled silicon crystals", + journal = "Journal of Physics and Chemistry of Solids", volume = "32", - pages = "1211", + number = "6", + pages = "1211--1219", year = "1971", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/S0022-3697(71)80179-8", + URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5", + author = "A. R. Bean and R. C. Newman", notes = "experimental solubility data of carbon in silicon", } @@ -70,6 +75,21 @@ notes = "sic polytypes", } +@Article{koegler03, + author = "R. Kögler and F. Eichhorn and J. R. Kaschny and A. + Mücklich and H. Reuther and W. Skorupa and C. Serre and + A. Perez-Rodriguez", + title = "Synthesis of nano-sized Si{C} precipitates in Si by + simultaneous dual-beam implantation of {C}+ and Si+ + ions", + journal = "Applied Physics A: Materials Science \& Processing", + volume = "76", + pages = "827--835", + month = mar, + year = "2003", + notes = "dual implantation, sic prec enhanced by vacancies", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -224,7 +244,7 @@ year = "1995", } -@Article{tersoff89, +@Article{brenner89, title = "Relationship between the embedded-atom method and Tersoff potentials", author = "Donald W. Brenner", @@ -325,7 +345,7 @@ tersoff", } -@Article{batra87, +@Article{kitabatake00, title = "Si{C}/Si heteroepitaxial growth", author = "M. Kitabatake", journal = "Thin Solid Films", @@ -355,7 +375,23 @@ notes = "si self interstitial, diffusion, tbmd", } -@Article{tang97, +@Article{bar-yam84, + title = "Barrier to Migration of the Silicon + Self-Interstitial", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. Lett.", + volume = "52", + number = "13", + pages = "1129--1132", + numpages = "3", + year = "1984", + month = mar, + doi = "10.1103/PhysRevLett.52.1129", + publisher = "American Physical Society", + notes = "si self-interstitial migration barrier", +} + +@Article{colombo02, title = "Tight-binding theory of native point defects in silicon", author = "L. Colombo", @@ -369,6 +405,58 @@ notes = "si self interstitial, tbmd, virial stress", } +@Article{al-mushadani03, + title = "Free-energy calculations of intrinsic point defects in + silicon", + author = "O. K. Al-Mushadani and R. J. Needs", + journal = "Phys. Rev. B", + volume = "68", + number = "23", + pages = "235205", + numpages = "8", + year = "2003", + month = dec, + doi = "10.1103/PhysRevB.68.235205", + publisher = "American Physical Society", + notes = "formation energies of intrinisc point defects in + silicon, si self interstitials, free energy", +} + +@Article{ma10, + title = "Ab initio study of self-diffusion in silicon over a + wide temperature range: Point defect states and + migration mechanisms", + author = "Shangyi Ma and Shaoqing Wang", + journal = "Phys. Rev. B", + volume = "81", + number = "19", + pages = "193203", + numpages = "4", + year = "2010", + month = may, + doi = "10.1103/PhysRevB.81.193203", + publisher = "American Physical Society", + notes = "si self interstitial diffusion + refs", +} + +@Article{posselt08, + title = "Correlation between self-diffusion in Si and the + migration mechanisms of vacancies and + self-interstitials: An atomistic study", + author = "M. Posselt and F. Gao and H. Bracht", + journal = "Phys. Rev. B", + volume = "78", + number = "3", + pages = "035208", + numpages = "9", + year = "2008", + month = jul, + doi = "10.1103/PhysRevB.78.035208", + publisher = "American Physical Society", + notes = "si self-interstitial and vacancy diffusion, stillinger + weber and tersoff", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", @@ -400,8 +488,8 @@ doi = "10.1103/PhysRevB.66.195214", publisher = "American Physical Society", notes = "c in c-si, diffusion, interstitial configuration + - links, interaction of carbon and silicon - interstitials", + links, interaction of carbon and silicon interstitials, + tersoff suitability", } @Article{leung99, @@ -473,6 +561,22 @@ path formation", } +@Article{car85, + title = "Unified Approach for Molecular Dynamics and + Density-Functional Theory", + author = "R. Car and M. Parrinello", + journal = "Phys. Rev. Lett.", + volume = "55", + number = "22", + pages = "2471--2474", + numpages = "3", + year = "1985", + month = nov, + doi = "10.1103/PhysRevLett.55.2471", + publisher = "American Physical Society", + notes = "car parrinello method, dft and md", +} + @Article{kelires97, title = "Short-range order, bulk moduli, and physical trends in c-$Si1-x$$Cx$ alloys", @@ -616,6 +720,37 @@ precipitate", } +@InProceedings{werner96, + author = "P. Werner and R. Koegler and W. Skorupa and D. + Eichler", + booktitle = "Ion Implantation Technology. Proceedings of the 11th + International Conference on", + title = "{TEM} investigation of {C}-Si defects in carbon + implanted silicon", + year = "1996", + month = jun, + volume = "", + number = "", + pages = "675--678", + keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C + atom/radiation induced defect interaction;C depth + distribution;C precipitation;C-Si defects;C-Si + dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high + energy ion implantation;ion implantation;metastable + agglomerates;microdefects;positron annihilation + spectroscopy;rapid thermal annealing;secondary ion mass + spectrometry;vacancy clusters;buried + layers;carbon;elemental semiconductors;impurity-defect + interactions;ion implantation;positron + annihilation;precipitation;rapid thermal + annealing;secondary ion mass + spectra;silicon;transmission electron + microscopy;vacancies (crystal);", + doi = "10.1109/IIT.1996.586497", + ISSN = "", + notes = "c-si agglomerates dumbbells", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -728,11 +863,11 @@ number = "1-4", pages = "528--533", year = "1999", - note = "", ISSN = "0168-583X", doi = "DOI: 10.1016/S0168-583X(98)00787-3", URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", author = "J. K. N. Lindner and B. Stritzker", + notes = "3c-sic precipitation model, c-si dimers (dumbbells)", } @Article{lindner01, @@ -763,6 +898,24 @@ notes = "ibs, burried sic layers", } +@Article{ito04, + title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its + application in buffer layer for Ga{N} epitaxial + growth", + journal = "Applied Surface Science", + volume = "238", + number = "1-4", + pages = "159--164", + year = "2004", + note = "APHYS'03 Special Issue", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2004.05.199", + URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c", + author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase + and S. Nishio and K. Yasuda and Y. Ishigami", + notes = "gan on 3c-sic", +} + @Article{alder57, author = "B. J. Alder and T. E. Wainwright", title = "Phase Transition for a Hard Sphere System", @@ -1027,6 +1180,43 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{nishino83, + author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. + Will", + collaboration = "", + title = "Production of large-area single-crystal wafers of + cubic Si{C} for semiconductor devices", + publisher = "AIP", + year = "1983", + journal = "Applied Physics Letters", + volume = "42", + number = "5", + pages = "460--462", + keywords = "silicon carbides; layers; chemical vapor deposition; + monocrystals", + URL = "http://link.aip.org/link/?APL/42/460/1", + doi = "10.1063/1.93970", + notes = "cvd of 3c-sic on si, sic buffer layer", +} + +@Article{nishino87, + author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono + and Hiroyuki Matsunami", + collaboration = "", + title = "Epitaxial growth and electric characteristics of cubic + Si{C} on silicon", + publisher = "AIP", + year = "1987", + journal = "Journal of Applied Physics", + volume = "61", + number = "10", + pages = "4889--4893", + URL = "http://link.aip.org/link/?JAP/61/4889/1", + doi = "10.1063/1.338355", + notes = "cvd of 3c-sic on si, sic buffer layer, first time + carbonization", +} + @Article{powell87, author = "J. Anthony Powell and Lawrence G. Matus and Maria A. Kuczmarski", @@ -1061,6 +1251,7 @@ VAPOR DEPOSITION", URL = "http://link.aip.org/link/?JAP/73/726/1", doi = "10.1063/1.353329", + notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } @Article{powell90, @@ -1082,6 +1273,28 @@ PHASE EPITAXY", URL = "http://link.aip.org/link/?APL/56/1353/1", doi = "10.1063/1.102512", + notes = "cvd of 3c-sic on 6h-sic", +} + +@Article{yuan95, + author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. + Thokala and M. J. Loboda", + collaboration = "", + title = "Reduced temperature growth of crystalline 3{C}-Si{C} + films on 6{H}-Si{C} by chemical vapor deposition from + silacyclobutane", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "2", + pages = "1271--1273", + keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION + EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD; + SPECTROPHOTOMETRY", + URL = "http://link.aip.org/link/?JAP/78/1271/1", + doi = "10.1063/1.360368", + notes = "3c-sic on 6h-sic, cvd, reduced temperature", } @Article{fissel95, @@ -1093,12 +1306,30 @@ number = "1-2", pages = "72--80", year = "1995", - notes = "solid source mbe", ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(95)00170-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter and W. Richter", + notes = "solid source mbe of 3c-sic on si and 6h-sic", +} + +@Article{fissel95_apl, + author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter", + collaboration = "", + title = "Low-temperature growth of Si{C} thin films on Si and + 6{H}--Si{C} by solid-source molecular beam epitaxy", + publisher = "AIP", + year = "1995", + journal = "Applied Physics Letters", + volume = "66", + number = "23", + pages = "3182--3184", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; + RHEED; NUCLEATION", + URL = "http://link.aip.org/link/?APL/66/3182/1", + doi = "10.1063/1.113716", + notes = "mbe 3c-sic on si and 6h-sic", } @Article{borders71, @@ -1113,8 +1344,9 @@ number = "11", pages = "509--511", URL = "http://link.aip.org/link/?APL/18/509/1", - notes = "first time sic by ibs", doi = "10.1063/1.1653516", + notes = "first time sic by ibs, follow cites for precipitation + ideas", } @Article{reeson87, @@ -1365,7 +1597,7 @@ notes = "charge transport in strained si", } -@Article{PhysRevB.69.155214, +@Article{kapur04, title = "Carbon-mediated aggregation of self-interstitials in silicon: {A} large-scale molecular dynamics study", author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", @@ -1457,6 +1689,39 @@ publisher = "American Physical Society", } +@Article{brenner90, + title = "Empirical potential for hydrocarbons for use in + simulating the chemical vapor deposition of diamond + films", + author = "Donald W. Brenner", + journal = "Phys. Rev. B", + volume = "42", + number = "15", + pages = "9458--9471", + numpages = "13", + year = "1990", + month = nov, + doi = "10.1103/PhysRevB.42.9458", + publisher = "American Physical Society", + notes = "brenner hydro carbons", +} + +@Article{bazant96, + title = "Modeling of Covalent Bonding in Solids by Inversion of + Cohesive Energy Curves", + author = "Martin Z. Bazant and Efthimios Kaxiras", + journal = "Phys. Rev. Lett.", + volume = "77", + number = "21", + pages = "4370--4373", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4370", + publisher = "American Physical Society", + notes = "first si edip", +} + @Article{bazant97, title = "Environment-dependent interatomic potential for bulk silicon", @@ -1471,6 +1736,7 @@ month = oct, doi = "10.1103/PhysRevB.56.8542", publisher = "American Physical Society", + notes = "second si edip", } @Article{justo98, @@ -1487,6 +1753,7 @@ month = aug, doi = "10.1103/PhysRevB.58.2539", publisher = "American Physical Society", + notes = "latest si edip, good dislocation explanation", } @Article{parcas_md, @@ -1605,3 +1872,592 @@ notes = "explanation of sgmd and hyper md, applied to amorphous silicon", } + +@Article{taylor93, + author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele", + collaboration = "", + title = "Carbon precipitation in silicon: Why is it so + difficult?", + publisher = "AIP", + year = "1993", + journal = "Applied Physics Letters", + volume = "62", + number = "25", + pages = "3336--3338", + keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED + MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE + ENERGY", + URL = "http://link.aip.org/link/?APL/62/3336/1", + doi = "10.1063/1.109063", + notes = "interfacial energy of cubic sic and si", +} + +@Article{chaussende08, + title = "Prospects for 3{C}-Si{C} bulk crystal growth", + journal = "Journal of Crystal Growth", + volume = "310", + number = "5", + pages = "976--981", + year = "2008", + note = "Proceedings of the E-MRS Conference, Symposium G - + Substrates of Wide Bandgap Materials", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2007.11.140", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082", + author = "D. Chaussende and F. Mercier and A. Boulle and F. + Conchon and M. Soueidan and G. Ferro and A. Mantzari + and A. Andreadou and E. K. Polychroniadis and C. + Balloud and S. Juillaguet and J. Camassel and M. Pons", + notes = "3c-sic crystal growth, sic fabrication + links, + metastable", +} + +@Article{feynman39, + title = "Forces in Molecules", + author = "R. P. Feynman", + journal = "Phys. Rev.", + volume = "56", + number = "4", + pages = "340--343", + numpages = "3", + year = "1939", + month = aug, + doi = "10.1103/PhysRev.56.340", + publisher = "American Physical Society", + notes = "hellmann feynman forces", +} + +@Article{buczko00, + title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and + $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of + their Contrasting Properties", + author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates + T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "84", + number = "5", + pages = "943--946", + numpages = "3", + year = "2000", + month = jan, + doi = "10.1103/PhysRevLett.84.943", + publisher = "American Physical Society", + notes = "si sio2 and sic sio2 interface", +} + +@Article{djurabekova08, + title = "Atomistic simulation of the interface structure of Si + nanocrystals embedded in amorphous silica", + author = "Flyura Djurabekova and Kai Nordlund", + journal = "Phys. Rev. B", + volume = "77", + number = "11", + pages = "115325", + numpages = "7", + year = "2008", + month = mar, + doi = "10.1103/PhysRevB.77.115325", + publisher = "American Physical Society", + notes = "nc-si in sio2, interface energy, nc construction, + angular distribution, coordination", +} + +@Article{wen09, + author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J. + W. Liang and J. Zou", + collaboration = "", + title = "Nature of interfacial defects and their roles in + strain relaxation at highly lattice mismatched + 3{C}-Si{C}/Si (001) interface", + publisher = "AIP", + year = "2009", + journal = "Journal of Applied Physics", + volume = "106", + number = "7", + eid = "073522", + numpages = "8", + pages = "073522", + keywords = "anelastic relaxation; crystal structure; dislocations; + elemental semiconductors; semiconductor growth; + semiconductor thin films; silicon; silicon compounds; + stacking faults; wide band gap semiconductors", + URL = "http://link.aip.org/link/?JAP/106/073522/1", + doi = "10.1063/1.3234380", + notes = "sic/si interface, follow refs, tem image + deconvolution, dislocation defects", +} + +@Article{kitabatake93, + author = "Makoto Kitabatake and Masahiro Deguchi and Takashi + Hirao", + collaboration = "", + title = "Simulations and experiments of Si{C} heteroepitaxial + growth on Si(001) surface", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "7", + pages = "4438--4445", + keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR + BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON; + MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION", + URL = "http://link.aip.org/link/?JAP/74/4438/1", + doi = "10.1063/1.354385", + notes = "mbe and md of sic growth on si, 4 to 5 shrinkage + model, interface", +} + +@Article{pizzagalli03, + title = "Theoretical investigations of a highly mismatched + interface: Si{C}/Si(001)", + author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra + Catellani", + journal = "Phys. Rev. B", + volume = "68", + number = "19", + pages = "195302", + numpages = "10", + year = "2003", + month = nov, + doi = "10.1103/PhysRevB.68.195302", + publisher = "American Physical Society", + notes = "tersoff md and ab initio sic/si interface study", +} + +@Article{tang07, + title = "Atomic configurations of dislocation core and twin + boundaries in $ 3{C}-Si{C} $ studied by high-resolution + electron microscopy", + author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X. + H. Zheng and J. W. Liang", + journal = "Phys. Rev. B", + volume = "75", + number = "18", + pages = "184103", + numpages = "7", + year = "2007", + month = may, + doi = "10.1103/PhysRevB.75.184103", + publisher = "American Physical Society", + notes = "hrem image deconvolution on 3c-sic on si, distinguish + si and c", +} + +@Article{hornstra58, + title = "Dislocations in the diamond lattice", + journal = "Journal of Physics and Chemistry of Solids", + volume = "5", + number = "1-2", + pages = "129--141", + year = "1958", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(58)90138-0", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5", + author = "J. Hornstra", + notes = "dislocations in diamond lattice", +} + +@Article{eichhorn99, + author = "F. Eichhorn and N. Schell and W. Matz and R. + K{\"{o}}gler", + collaboration = "", + title = "Strain and Si{C} particle formation in silicon + implanted with carbon ions of medium fluence studied by + synchrotron x-ray diffraction", + publisher = "AIP", + year = "1999", + journal = "Journal of Applied Physics", + volume = "86", + number = "8", + pages = "4184--4187", + keywords = "silicon; carbon; elemental semiconductors; chemical + interdiffusion; ion implantation; X-ray diffraction; + precipitation; semiconductor doping", + URL = "http://link.aip.org/link/?JAP/86/4184/1", + doi = "10.1063/1.371344", + notes = "sic conversion by ibs, detected substitutional + carbon", +} + +@Article{eichhorn02, + author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H. + Metzger and W. Matz and R. K{\"{o}}gler", + collaboration = "", + title = "Structural relation between Si and Si{C} formed by + carbon ion implantation", + publisher = "AIP", + year = "2002", + journal = "Journal of Applied Physics", + volume = "91", + number = "3", + pages = "1287--1292", + keywords = "silicon compounds; wide band gap semiconductors; ion + implantation; annealing; X-ray scattering; transmission + electron microscopy", + URL = "http://link.aip.org/link/?JAP/91/1287/1", + doi = "10.1063/1.1428105", + notes = "3c-sic alignement to si host in ibs depending on + temperature, might explain c int to c sub trafo", +} + +@Article{lucas10, + author = "G Lucas and M Bertolus and L Pizzagalli", + title = "An environment-dependent interatomic potential for + silicon carbide: calculation of bulk properties, + high-pressure phases, point and extended defects, and + amorphous structures", + journal = "Journal of Physics: Condensed Matter", + volume = "22", + number = "3", + pages = "035802", + URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802", + year = "2010", + notes = "edip sic", +} + +@Article{godet03, + author = "J Godet and L Pizzagalli and S Brochard and P + Beauchamp", + title = "Comparison between classical potentials and ab initio + methods for silicon under large shear", + journal = "Journal of Physics: Condensed Matter", + volume = "15", + number = "41", + pages = "6943", + URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004", + year = "2003", + notes = "comparison of empirical potentials, stillinger weber, + edip, tersoff, ab initio", +} + +@Article{moriguchi98, + title = "Verification of Tersoff's Potential for Static + Structural Analysis of Solids of Group-{IV} Elements", + author = "Koji Moriguchi and Akira Shintani", + journal = "Japanese Journal of Applied Physics", + volume = "37", + number = "Part 1, No. 2", + pages = "414--422", + numpages = "8", + year = "1998", + URL = "http://jjap.ipap.jp/link?JJAP/37/414/", + doi = "10.1143/JJAP.37.414", + publisher = "The Japan Society of Applied Physics", + notes = "tersoff stringent test", +} + +@Article{holmstroem08, + title = "Threshold defect production in silicon determined by + density functional theory molecular dynamics + simulations", + author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund", + journal = "Phys. Rev. B", + volume = "78", + number = "4", + pages = "045202", + numpages = "6", + year = "2008", + month = jul, + doi = "10.1103/PhysRevB.78.045202", + publisher = "American Physical Society", + notes = "threshold displacement comparison empirical and ab + initio", +} + +@Article{nordlund97, + title = "Repulsive interatomic potentials calculated using + Hartree-Fock and density-functional theory methods", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "132", + number = "1", + pages = "45--54", + year = "1997", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(97)00447-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1", + author = "K. Nordlund and N. Runeberg and D. Sundholm", + notes = "repulsive ab initio potential", +} + +@Article{kresse96, + title = "Efficiency of ab-initio total energy calculations for + metals and semiconductors using a plane-wave basis + set", + journal = "Computational Materials Science", + volume = "6", + number = "1", + pages = "15--50", + year = "1996", + note = "", + ISSN = "0927-0256", + doi = "DOI: 10.1016/0927-0256(96)00008-0", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74", + author = "G. Kresse and J. Furthmüller", + notes = "vasp ref", +} + +@Article{bloechl94, + title = "Projector augmented-wave method", + author = "P. E. Bl{\"o}chl", + journal = "Phys. Rev. B", + volume = "50", + number = "24", + pages = "17953--17979", + numpages = "26", + year = "1994", + month = dec, + doi = "10.1103/PhysRevB.50.17953", + publisher = "American Physical Society", + notes = "paw method", +} + +@Article{hamann79, + title = "Norm-Conserving Pseudopotentials", + author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang", + journal = "Phys. Rev. Lett.", + volume = "43", + number = "20", + pages = "1494--1497", + numpages = "3", + year = "1979", + month = nov, + doi = "10.1103/PhysRevLett.43.1494", + publisher = "American Physical Society", + notes = "norm-conserving pseudopotentials", +} + +@Article{vanderbilt90, + title = "Soft self-consistent pseudopotentials in a generalized + eigenvalue formalism", + author = "David Vanderbilt", + journal = "Phys. Rev. B", + volume = "41", + number = "11", + pages = "7892--7895", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevB.41.7892", + publisher = "American Physical Society", + notes = "vasp pseudopotentials", +} + +@Article{perdew86, + title = "Accurate and simple density functional for the + electronic exchange energy: Generalized gradient + approximation", + author = "John P. Perdew and Wang Yue", + journal = "Phys. Rev. B", + volume = "33", + number = "12", + pages = "8800--8802", + numpages = "2", + year = "1986", + month = jun, + doi = "10.1103/PhysRevB.33.8800", + publisher = "American Physical Society", + notes = "rapid communication gga", +} + +@Article{perdew02, + title = "Generalized gradient approximations for exchange and + correlation: {A} look backward and forward", + journal = "Physica B: Condensed Matter", + volume = "172", + number = "1-2", + pages = "1--6", + year = "1991", + note = "", + ISSN = "0921-4526", + doi = "DOI: 10.1016/0921-4526(91)90409-8", + URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7", + author = "John P. Perdew", + notes = "gga overview", +} + +@Article{perdew92, + title = "Atoms, molecules, solids, and surfaces: Applications + of the generalized gradient approximation for exchange + and correlation", + author = "John P. Perdew and J. A. Chevary and S. H. Vosko and + Koblar A. Jackson and Mark R. Pederson and D. J. Singh + and Carlos Fiolhais", + journal = "Phys. Rev. B", + volume = "46", + number = "11", + pages = "6671--6687", + numpages = "16", + year = "1992", + month = sep, + doi = "10.1103/PhysRevB.46.6671", + publisher = "American Physical Society", + notes = "gga pw91 (as in vasp)", +} + +@Article{baldereschi73, + title = "Mean-Value Point in the Brillouin Zone", + author = "A. Baldereschi", + journal = "Phys. Rev. B", + volume = "7", + number = "12", + pages = "5212--5215", + numpages = "3", + year = "1973", + month = jun, + doi = "10.1103/PhysRevB.7.5212", + publisher = "American Physical Society", + notes = "mean value k point", +} + +@Article{zhu98, + title = "Ab initio pseudopotential calculations of dopant + diffusion in Si", + journal = "Computational Materials Science", + volume = "12", + number = "4", + pages = "309--318", + year = "1998", + note = "", + ISSN = "0927-0256", + doi = "DOI: 10.1016/S0927-0256(98)00023-8", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b", + author = "Jing Zhu", + keywords = "TED (transient enhanced diffusion)", + keywords = "Boron dopant", + keywords = "Carbon dopant", + keywords = "Defect", + keywords = "ab initio pseudopotential method", + keywords = "Impurity cluster", + notes = "binding of c to si interstitial, c in si defects", +} + +@Article{nejim95, + author = "A. Nejim and P. L. F. Hemment and J. Stoemenos", + collaboration = "", + title = "Si{C} buried layer formation by ion beam synthesis at + 950 [degree]{C}", + publisher = "AIP", + year = "1995", + journal = "Applied Physics Letters", + volume = "66", + number = "20", + pages = "2646--2648", + keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON + CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 -- + 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION + ELECTRON MICROSCOPY", + URL = "http://link.aip.org/link/?APL/66/2646/1", + doi = "10.1063/1.113112", + notes = "precipitation mechanism by substitutional carbon, si + self interstitials react with further implanted c", +} + +@Article{guedj98, + author = "C. Guedj and M. W. Dashiell and L. Kulik and J. + Kolodzey and A. Hairie", + collaboration = "", + title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y] + alloys", + publisher = "AIP", + year = "1998", + journal = "Journal of Applied Physics", + volume = "84", + number = "8", + pages = "4631--4633", + keywords = "silicon compounds; precipitation; localised modes; + semiconductor epitaxial layers; infrared spectra; + Fourier transform spectra; thermal stability; + annealing", + URL = "http://link.aip.org/link/?JAP/84/4631/1", + doi = "10.1063/1.368703", + notes = "coherent 3C-SiC, topotactic", +} + +@Article{jones04, + author = "R Jones and B J Coomer and P R Briddon", + title = "Quantum mechanical modelling of defects in + semiconductors", + journal = "Journal of Physics: Condensed Matter", + volume = "16", + number = "27", + pages = "S2643", + URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004", + year = "2004", + notes = "ab inito init, vibrational modes, c defect in si", +} + +@Article{park02, + author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. + T Soares and Y.-W. Kim and H. Kim and P. Desjardins and + J. E. Greene and S. G. Bishop", + collaboration = "", + title = "Carbon incorporation pathways and lattice sites in + Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by + molecular-beam epitaxy", + publisher = "AIP", + year = "2002", + journal = "Journal of Applied Physics", + volume = "91", + number = "9", + pages = "5716--5727", + URL = "http://link.aip.org/link/?JAP/91/5716/1", + doi = "10.1063/1.1465122", + notes = "c substitutional incorporation pathway, dft and expt", +} + +@Article{leary97, + title = "Dynamic properties of interstitial carbon and + carbon-carbon pair defects in silicon", + author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B. + Torres", + journal = "Phys. Rev. B", + volume = "55", + number = "4", + pages = "2188--2194", + numpages = "6", + year = "1997", + month = jan, + doi = "10.1103/PhysRevB.55.2188", + publisher = "American Physical Society", + notes = "ab initio c in si and di-carbon defect, no formation + energies", +} + +@Article{burnard93, + title = "Interstitial carbon and the carbon-carbon pair in + silicon: Semiempirical electronic-structure + calculations", + author = "Matthew J. Burnard and Gary G. DeLeo", + journal = "Phys. Rev. B", + volume = "47", + number = "16", + pages = "10217--10225", + numpages = "8", + year = "1993", + month = apr, + doi = "10.1103/PhysRevB.47.10217", + publisher = "American Physical Society", + notes = "semi empirical mndo, pm3 and mindo3 c in si and di + carbon defect, formation energies", +} + +@Article{kaxiras96, + title = "Review of atomistic simulations of surface diffusion + and growth on semiconductors", + journal = "Computational Materials Science", + volume = "6", + number = "2", + pages = "158--172", + year = "1996", + note = "Proceedings of the Workshop on Virtual Molecular Beam + Epitaxy", + ISSN = "0927-0256", + doi = "DOI: 10.1016/0927-0256(96)00030-4", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6", + author = "Efthimios Kaxiras", + notes = "might contain c 100 db formation energy", +}