X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=4828a7b58d5ef1abd6b769c9df0a7fe3f8ade32d;hb=5a0bd5c3262f68a13c779d098b8dfa4ff171384a;hp=6b11b005a2ad5dc92972489ff17e63b5b0507921;hpb=08a1e425ff504bc3e50bcff0e5771bb7186f13d3;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 6b11b00..4828a7b 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -41,12 +41,17 @@ } @Article{bean71, - author = "A. R. Bean and R. C. Newman", - title = "", - journal = "J. Phys. Chem. Solids", + title = "The solubility of carbon in pulled silicon crystals", + journal = "Journal of Physics and Chemistry of Solids", volume = "32", - pages = "1211", + number = "6", + pages = "1211--1219", year = "1971", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/S0022-3697(71)80179-8", + URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5", + author = "A. R. Bean and R. C. Newman", notes = "experimental solubility data of carbon in silicon", } @@ -70,6 +75,21 @@ notes = "sic polytypes", } +@Article{koegler03, + author = "R. Kögler and F. Eichhorn and J. R. Kaschny and A. + Mücklich and H. Reuther and W. Skorupa and C. Serre and + A. Perez-Rodriguez", + title = "Synthesis of nano-sized Si{C} precipitates in Si by + simultaneous dual-beam implantation of {C}+ and Si+ + ions", + journal = "Applied Physics A: Materials Science \& Processing", + volume = "76", + pages = "827--835", + month = mar, + year = "2003", + notes = "dual implantation, sic prec enhanced by vacancies", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -399,7 +419,7 @@ doi = "10.1103/PhysRevB.68.235205", publisher = "American Physical Society", notes = "formation energies of intrinisc point defects in - silicon, si self interstitials", + silicon, si self interstitials, free energy", } @Article{ma10, @@ -2277,3 +2297,167 @@ publisher = "American Physical Society", notes = "gga pw91 (as in vasp)", } + +@Article{baldereschi73, + title = "Mean-Value Point in the Brillouin Zone", + author = "A. Baldereschi", + journal = "Phys. Rev. B", + volume = "7", + number = "12", + pages = "5212--5215", + numpages = "3", + year = "1973", + month = jun, + doi = "10.1103/PhysRevB.7.5212", + publisher = "American Physical Society", + notes = "mean value k point", +} + +@Article{zhu98, + title = "Ab initio pseudopotential calculations of dopant + diffusion in Si", + journal = "Computational Materials Science", + volume = "12", + number = "4", + pages = "309--318", + year = "1998", + note = "", + ISSN = "0927-0256", + doi = "DOI: 10.1016/S0927-0256(98)00023-8", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b", + author = "Jing Zhu", + keywords = "TED (transient enhanced diffusion)", + keywords = "Boron dopant", + keywords = "Carbon dopant", + keywords = "Defect", + keywords = "ab initio pseudopotential method", + keywords = "Impurity cluster", + notes = "binding of c to si interstitial, c in si defects", +} + +@Article{nejim95, + author = "A. Nejim and P. L. F. Hemment and J. Stoemenos", + collaboration = "", + title = "Si{C} buried layer formation by ion beam synthesis at + 950 [degree]{C}", + publisher = "AIP", + year = "1995", + journal = "Applied Physics Letters", + volume = "66", + number = "20", + pages = "2646--2648", + keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON + CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 -- + 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION + ELECTRON MICROSCOPY", + URL = "http://link.aip.org/link/?APL/66/2646/1", + doi = "10.1063/1.113112", + notes = "precipitation mechanism by substitutional carbon, si + self interstitials react with further implanted c", +} + +@Article{guedj98, + author = "C. Guedj and M. W. Dashiell and L. Kulik and J. + Kolodzey and A. Hairie", + collaboration = "", + title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y] + alloys", + publisher = "AIP", + year = "1998", + journal = "Journal of Applied Physics", + volume = "84", + number = "8", + pages = "4631--4633", + keywords = "silicon compounds; precipitation; localised modes; + semiconductor epitaxial layers; infrared spectra; + Fourier transform spectra; thermal stability; + annealing", + URL = "http://link.aip.org/link/?JAP/84/4631/1", + doi = "10.1063/1.368703", + notes = "coherent 3C-SiC, topotactic", +} + +@Article{jones04, + author = "R Jones and B J Coomer and P R Briddon", + title = "Quantum mechanical modelling of defects in + semiconductors", + journal = "Journal of Physics: Condensed Matter", + volume = "16", + number = "27", + pages = "S2643", + URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004", + year = "2004", + notes = "ab inito init, vibrational modes, c defect in si", +} + +@Article{park02, + author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. + T Soares and Y.-W. Kim and H. Kim and P. Desjardins and + J. E. Greene and S. G. Bishop", + collaboration = "", + title = "Carbon incorporation pathways and lattice sites in + Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by + molecular-beam epitaxy", + publisher = "AIP", + year = "2002", + journal = "Journal of Applied Physics", + volume = "91", + number = "9", + pages = "5716--5727", + URL = "http://link.aip.org/link/?JAP/91/5716/1", + doi = "10.1063/1.1465122", + notes = "c substitutional incorporation pathway, dft and expt", +} + +@Article{leary97, + title = "Dynamic properties of interstitial carbon and + carbon-carbon pair defects in silicon", + author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B. + Torres", + journal = "Phys. Rev. B", + volume = "55", + number = "4", + pages = "2188--2194", + numpages = "6", + year = "1997", + month = jan, + doi = "10.1103/PhysRevB.55.2188", + publisher = "American Physical Society", + notes = "ab initio c in si and di-carbon defect, no formation + energies", +} + +@Article{burnard93, + title = "Interstitial carbon and the carbon-carbon pair in + silicon: Semiempirical electronic-structure + calculations", + author = "Matthew J. Burnard and Gary G. DeLeo", + journal = "Phys. Rev. B", + volume = "47", + number = "16", + pages = "10217--10225", + numpages = "8", + year = "1993", + month = apr, + doi = "10.1103/PhysRevB.47.10217", + publisher = "American Physical Society", + notes = "semi empirical mndo, pm3 and mindo3 c in si and di + carbon defect, formation energies", +} + +@Article{kaxiras96, + title = "Review of atomistic simulations of surface diffusion + and growth on semiconductors", + journal = "Computational Materials Science", + volume = "6", + number = "2", + pages = "158--172", + year = "1996", + note = "Proceedings of the Workshop on Virtual Molecular Beam + Epitaxy", + ISSN = "0927-0256", + doi = "DOI: 10.1016/0927-0256(96)00030-4", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6", + author = "Efthimios Kaxiras", + notes = "might contain c 100 db formation energy", +}