X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=4828a7b58d5ef1abd6b769c9df0a7fe3f8ade32d;hb=5a0bd5c3262f68a13c779d098b8dfa4ff171384a;hp=d7b604d74d037b2489b664b9bea36fededf2b199;hpb=2576f7279446ee41c999edc47bab6320101bb860;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index d7b604d..4828a7b 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -41,12 +41,17 @@ } @Article{bean71, - author = "A. R. Bean and R. C. Newman", - title = "", - journal = "J. Phys. Chem. Solids", + title = "The solubility of carbon in pulled silicon crystals", + journal = "Journal of Physics and Chemistry of Solids", volume = "32", - pages = "1211", + number = "6", + pages = "1211--1219", year = "1971", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/S0022-3697(71)80179-8", + URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5", + author = "A. R. Bean and R. C. Newman", notes = "experimental solubility data of carbon in silicon", } @@ -70,6 +75,21 @@ notes = "sic polytypes", } +@Article{koegler03, + author = "R. Kögler and F. Eichhorn and J. R. Kaschny and A. + Mücklich and H. Reuther and W. Skorupa and C. Serre and + A. Perez-Rodriguez", + title = "Synthesis of nano-sized Si{C} precipitates in Si by + simultaneous dual-beam implantation of {C}+ and Si+ + ions", + journal = "Applied Physics A: Materials Science \& Processing", + volume = "76", + pages = "827--835", + month = mar, + year = "2003", + notes = "dual implantation, sic prec enhanced by vacancies", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -325,7 +345,7 @@ tersoff", } -@Article{batra87, +@Article{kitabatake00, title = "Si{C}/Si heteroepitaxial growth", author = "M. Kitabatake", journal = "Thin Solid Films", @@ -355,7 +375,23 @@ notes = "si self interstitial, diffusion, tbmd", } -@Article{tang97, +@Article{bar-yam84, + title = "Barrier to Migration of the Silicon + Self-Interstitial", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. Lett.", + volume = "52", + number = "13", + pages = "1129--1132", + numpages = "3", + year = "1984", + month = mar, + doi = "10.1103/PhysRevLett.52.1129", + publisher = "American Physical Society", + notes = "si self-interstitial migration barrier", +} + +@Article{colombo02, title = "Tight-binding theory of native point defects in silicon", author = "L. Colombo", @@ -383,7 +419,7 @@ doi = "10.1103/PhysRevB.68.235205", publisher = "American Physical Society", notes = "formation energies of intrinisc point defects in - silicon, si self interstitials", + silicon, si self interstitials, free energy", } @Article{ma10, @@ -403,6 +439,24 @@ notes = "si self interstitial diffusion + refs", } +@Article{posselt08, + title = "Correlation between self-diffusion in Si and the + migration mechanisms of vacancies and + self-interstitials: An atomistic study", + author = "M. Posselt and F. Gao and H. Bracht", + journal = "Phys. Rev. B", + volume = "78", + number = "3", + pages = "035208", + numpages = "9", + year = "2008", + month = jul, + doi = "10.1103/PhysRevB.78.035208", + publisher = "American Physical Society", + notes = "si self-interstitial and vacancy diffusion, stillinger + weber and tersoff", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", @@ -434,8 +488,8 @@ doi = "10.1103/PhysRevB.66.195214", publisher = "American Physical Society", notes = "c in c-si, diffusion, interstitial configuration + - links, interaction of carbon and silicon - interstitials", + links, interaction of carbon and silicon interstitials, + tersoff suitability", } @Article{leung99, @@ -507,6 +561,22 @@ path formation", } +@Article{car85, + title = "Unified Approach for Molecular Dynamics and + Density-Functional Theory", + author = "R. Car and M. Parrinello", + journal = "Phys. Rev. Lett.", + volume = "55", + number = "22", + pages = "2471--2474", + numpages = "3", + year = "1985", + month = nov, + doi = "10.1103/PhysRevLett.55.2471", + publisher = "American Physical Society", + notes = "car parrinello method, dft and md", +} + @Article{kelires97, title = "Short-range order, bulk moduli, and physical trends in c-$Si1-x$$Cx$ alloys", @@ -2077,3 +2147,317 @@ publisher = "The Japan Society of Applied Physics", notes = "tersoff stringent test", } + +@Article{holmstroem08, + title = "Threshold defect production in silicon determined by + density functional theory molecular dynamics + simulations", + author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund", + journal = "Phys. Rev. B", + volume = "78", + number = "4", + pages = "045202", + numpages = "6", + year = "2008", + month = jul, + doi = "10.1103/PhysRevB.78.045202", + publisher = "American Physical Society", + notes = "threshold displacement comparison empirical and ab + initio", +} + +@Article{nordlund97, + title = "Repulsive interatomic potentials calculated using + Hartree-Fock and density-functional theory methods", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "132", + number = "1", + pages = "45--54", + year = "1997", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(97)00447-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1", + author = "K. Nordlund and N. Runeberg and D. Sundholm", + notes = "repulsive ab initio potential", +} + +@Article{kresse96, + title = "Efficiency of ab-initio total energy calculations for + metals and semiconductors using a plane-wave basis + set", + journal = "Computational Materials Science", + volume = "6", + number = "1", + pages = "15--50", + year = "1996", + note = "", + ISSN = "0927-0256", + doi = "DOI: 10.1016/0927-0256(96)00008-0", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74", + author = "G. Kresse and J. Furthmüller", + notes = "vasp ref", +} + +@Article{bloechl94, + title = "Projector augmented-wave method", + author = "P. E. Bl{\"o}chl", + journal = "Phys. Rev. B", + volume = "50", + number = "24", + pages = "17953--17979", + numpages = "26", + year = "1994", + month = dec, + doi = "10.1103/PhysRevB.50.17953", + publisher = "American Physical Society", + notes = "paw method", +} + +@Article{hamann79, + title = "Norm-Conserving Pseudopotentials", + author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang", + journal = "Phys. Rev. Lett.", + volume = "43", + number = "20", + pages = "1494--1497", + numpages = "3", + year = "1979", + month = nov, + doi = "10.1103/PhysRevLett.43.1494", + publisher = "American Physical Society", + notes = "norm-conserving pseudopotentials", +} + +@Article{vanderbilt90, + title = "Soft self-consistent pseudopotentials in a generalized + eigenvalue formalism", + author = "David Vanderbilt", + journal = "Phys. Rev. B", + volume = "41", + number = "11", + pages = "7892--7895", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevB.41.7892", + publisher = "American Physical Society", + notes = "vasp pseudopotentials", +} + +@Article{perdew86, + title = "Accurate and simple density functional for the + electronic exchange energy: Generalized gradient + approximation", + author = "John P. Perdew and Wang Yue", + journal = "Phys. Rev. B", + volume = "33", + number = "12", + pages = "8800--8802", + numpages = "2", + year = "1986", + month = jun, + doi = "10.1103/PhysRevB.33.8800", + publisher = "American Physical Society", + notes = "rapid communication gga", +} + +@Article{perdew02, + title = "Generalized gradient approximations for exchange and + correlation: {A} look backward and forward", + journal = "Physica B: Condensed Matter", + volume = "172", + number = "1-2", + pages = "1--6", + year = "1991", + note = "", + ISSN = "0921-4526", + doi = "DOI: 10.1016/0921-4526(91)90409-8", + URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7", + author = "John P. Perdew", + notes = "gga overview", +} + +@Article{perdew92, + title = "Atoms, molecules, solids, and surfaces: Applications + of the generalized gradient approximation for exchange + and correlation", + author = "John P. Perdew and J. A. Chevary and S. H. Vosko and + Koblar A. Jackson and Mark R. Pederson and D. J. Singh + and Carlos Fiolhais", + journal = "Phys. Rev. B", + volume = "46", + number = "11", + pages = "6671--6687", + numpages = "16", + year = "1992", + month = sep, + doi = "10.1103/PhysRevB.46.6671", + publisher = "American Physical Society", + notes = "gga pw91 (as in vasp)", +} + +@Article{baldereschi73, + title = "Mean-Value Point in the Brillouin Zone", + author = "A. Baldereschi", + journal = "Phys. Rev. B", + volume = "7", + number = "12", + pages = "5212--5215", + numpages = "3", + year = "1973", + month = jun, + doi = "10.1103/PhysRevB.7.5212", + publisher = "American Physical Society", + notes = "mean value k point", +} + +@Article{zhu98, + title = "Ab initio pseudopotential calculations of dopant + diffusion in Si", + journal = "Computational Materials Science", + volume = "12", + number = "4", + pages = "309--318", + year = "1998", + note = "", + ISSN = "0927-0256", + doi = "DOI: 10.1016/S0927-0256(98)00023-8", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b", + author = "Jing Zhu", + keywords = "TED (transient enhanced diffusion)", + keywords = "Boron dopant", + keywords = "Carbon dopant", + keywords = "Defect", + keywords = "ab initio pseudopotential method", + keywords = "Impurity cluster", + notes = "binding of c to si interstitial, c in si defects", +} + +@Article{nejim95, + author = "A. Nejim and P. L. F. Hemment and J. Stoemenos", + collaboration = "", + title = "Si{C} buried layer formation by ion beam synthesis at + 950 [degree]{C}", + publisher = "AIP", + year = "1995", + journal = "Applied Physics Letters", + volume = "66", + number = "20", + pages = "2646--2648", + keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON + CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 -- + 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION + ELECTRON MICROSCOPY", + URL = "http://link.aip.org/link/?APL/66/2646/1", + doi = "10.1063/1.113112", + notes = "precipitation mechanism by substitutional carbon, si + self interstitials react with further implanted c", +} + +@Article{guedj98, + author = "C. Guedj and M. W. Dashiell and L. Kulik and J. + Kolodzey and A. Hairie", + collaboration = "", + title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y] + alloys", + publisher = "AIP", + year = "1998", + journal = "Journal of Applied Physics", + volume = "84", + number = "8", + pages = "4631--4633", + keywords = "silicon compounds; precipitation; localised modes; + semiconductor epitaxial layers; infrared spectra; + Fourier transform spectra; thermal stability; + annealing", + URL = "http://link.aip.org/link/?JAP/84/4631/1", + doi = "10.1063/1.368703", + notes = "coherent 3C-SiC, topotactic", +} + +@Article{jones04, + author = "R Jones and B J Coomer and P R Briddon", + title = "Quantum mechanical modelling of defects in + semiconductors", + journal = "Journal of Physics: Condensed Matter", + volume = "16", + number = "27", + pages = "S2643", + URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004", + year = "2004", + notes = "ab inito init, vibrational modes, c defect in si", +} + +@Article{park02, + author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. + T Soares and Y.-W. Kim and H. Kim and P. Desjardins and + J. E. Greene and S. G. Bishop", + collaboration = "", + title = "Carbon incorporation pathways and lattice sites in + Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by + molecular-beam epitaxy", + publisher = "AIP", + year = "2002", + journal = "Journal of Applied Physics", + volume = "91", + number = "9", + pages = "5716--5727", + URL = "http://link.aip.org/link/?JAP/91/5716/1", + doi = "10.1063/1.1465122", + notes = "c substitutional incorporation pathway, dft and expt", +} + +@Article{leary97, + title = "Dynamic properties of interstitial carbon and + carbon-carbon pair defects in silicon", + author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B. + Torres", + journal = "Phys. Rev. B", + volume = "55", + number = "4", + pages = "2188--2194", + numpages = "6", + year = "1997", + month = jan, + doi = "10.1103/PhysRevB.55.2188", + publisher = "American Physical Society", + notes = "ab initio c in si and di-carbon defect, no formation + energies", +} + +@Article{burnard93, + title = "Interstitial carbon and the carbon-carbon pair in + silicon: Semiempirical electronic-structure + calculations", + author = "Matthew J. Burnard and Gary G. DeLeo", + journal = "Phys. Rev. B", + volume = "47", + number = "16", + pages = "10217--10225", + numpages = "8", + year = "1993", + month = apr, + doi = "10.1103/PhysRevB.47.10217", + publisher = "American Physical Society", + notes = "semi empirical mndo, pm3 and mindo3 c in si and di + carbon defect, formation energies", +} + +@Article{kaxiras96, + title = "Review of atomistic simulations of surface diffusion + and growth on semiconductors", + journal = "Computational Materials Science", + volume = "6", + number = "2", + pages = "158--172", + year = "1996", + note = "Proceedings of the Workshop on Virtual Molecular Beam + Epitaxy", + ISSN = "0927-0256", + doi = "DOI: 10.1016/0927-0256(96)00030-4", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6", + author = "Efthimios Kaxiras", + notes = "might contain c 100 db formation energy", +}