X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=5c711f6bd4382c7a9f5c93161d08708e3c3e012a;hb=cf7d6d5774df6c983b95e7fe919980d9d5c16c4a;hp=327f4c0decf80ba10209ffb32b824110c9ef5d42;hpb=fbf04a7729cd69c3416caa748f53453d860f165f;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 327f4c0..5c711f6 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -369,6 +369,40 @@ notes = "si self interstitial, tbmd, virial stress", } +@Article{al-mushadani03, + title = "Free-energy calculations of intrinsic point defects in + silicon", + author = "O. K. Al-Mushadani and R. J. Needs", + journal = "Phys. Rev. B", + volume = "68", + number = "23", + pages = "235205", + numpages = "8", + year = "2003", + month = dec, + doi = "10.1103/PhysRevB.68.235205", + publisher = "American Physical Society", + notes = "formation energies of intrinisc point defects in + silicon, si self interstitials", +} + +@Article{ma10, + title = "Ab initio study of self-diffusion in silicon over a + wide temperature range: Point defect states and + migration mechanisms", + author = "Shangyi Ma and Shaoqing Wang", + journal = "Phys. Rev. B", + volume = "81", + number = "19", + pages = "193203", + numpages = "4", + year = "2010", + month = may, + doi = "10.1103/PhysRevB.81.193203", + publisher = "American Physical Society", + notes = "si self interstitial diffusion + refs", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", @@ -1027,6 +1061,26 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{nishino83, + author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. + Will", + collaboration = "", + title = "Production of large-area single-crystal wafers of + cubic Si{C} for semiconductor devices", + publisher = "AIP", + year = "1983", + journal = "Applied Physics Letters", + volume = "42", + number = "5", + pages = "460--462", + keywords = "silicon carbides; layers; chemical vapor deposition; + monocrystals", + URL = "http://link.aip.org/link/?APL/42/460/1", + doi = "10.1063/1.93970", + notes = "cvd of 3c-sic on si, first time carbonization, sic + buffer layer", +} + @Article{powell87, author = "J. Anthony Powell and Lawrence G. Matus and Maria A. Kuczmarski", @@ -1061,6 +1115,7 @@ VAPOR DEPOSITION", URL = "http://link.aip.org/link/?JAP/73/726/1", doi = "10.1063/1.353329", + notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } @Article{powell90, @@ -1082,6 +1137,28 @@ PHASE EPITAXY", URL = "http://link.aip.org/link/?APL/56/1353/1", doi = "10.1063/1.102512", + notes = "cvd of 3c-sic on 6h-sic", +} + +@Article{yuan95, + author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. + Thokala and M. J. Loboda", + collaboration = "", + title = "Reduced temperature growth of crystalline 3{C}-Si{C} + films on 6{H}-Si{C} by chemical vapor deposition from + silacyclobutane", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "2", + pages = "1271--1273", + keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION + EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD; + SPECTROPHOTOMETRY", + URL = "http://link.aip.org/link/?JAP/78/1271/1", + doi = "10.1063/1.360368", + notes = "3c-sic on 6h-sic, cvd, reduced temperature", } @Article{fissel95, @@ -1365,7 +1442,7 @@ notes = "charge transport in strained si", } -@Article{PhysRevB.69.155214, +@Article{kapur04, title = "Carbon-mediated aggregation of self-interstitials in silicon: {A} large-scale molecular dynamics study", author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", @@ -1624,3 +1701,73 @@ doi = "10.1063/1.109063", notes = "interfacial energy of cubic sic and si", } + +@Article{chaussende08, + title = "Prospects for 3{C}-Si{C} bulk crystal growth", + journal = "Journal of Crystal Growth", + volume = "310", + number = "5", + pages = "976--981", + year = "2008", + note = "Proceedings of the E-MRS Conference, Symposium G - + Substrates of Wide Bandgap Materials", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2007.11.140", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082", + author = "D. Chaussende and F. Mercier and A. Boulle and F. + Conchon and M. Soueidan and G. Ferro and A. Mantzari + and A. Andreadou and E. K. Polychroniadis and C. + Balloud and S. Juillaguet and J. Camassel and M. Pons", + notes = "3c-sic crystal growth, sic fabrication + links, + metastable", +} + +@Article{feynman39, + title = "Forces in Molecules", + author = "R. P. Feynman", + journal = "Phys. Rev.", + volume = "56", + number = "4", + pages = "340--343", + numpages = "3", + year = "1939", + month = aug, + doi = "10.1103/PhysRev.56.340", + publisher = "American Physical Society", + notes = "hellmann feynman forces", +} + +@Article{buczko00, + title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and + $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of + their Contrasting Properties", + author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates + T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "84", + number = "5", + pages = "943--946", + numpages = "3", + year = "2000", + month = jan, + doi = "10.1103/PhysRevLett.84.943", + publisher = "American Physical Society", + notes = "si sio2 and sic sio2 interface", +} + +@Article{djurabekova08, + title = "Atomistic simulation of the interface structure of Si + nanocrystals embedded in amorphous silica", + author = "Flyura Djurabekova and Kai Nordlund", + journal = "Phys. Rev. B", + volume = "77", + number = "11", + pages = "115325", + numpages = "7", + year = "2008", + month = mar, + doi = "10.1103/PhysRevB.77.115325", + publisher = "American Physical Society", + notes = "nc-si in sio2, interface energy, nc construction, + angular distribution, coordination", +}