X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=5e74ec43e7a724ad0514d08c8b2e5c73647892c8;hb=2207607feef9e4b4bae716cb431577acf19f5005;hp=793ad39d8ec881cc0df460ebc511cd02b2f15592;hpb=86ab4cc17acb522761e992c818f4ee65a07ae1d4;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 793ad39..5e74ec4 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -705,7 +705,44 @@
   month =        oct,
   doi =          "10.1103/PhysRevB.58.9845",
   publisher =    "American Physical Society",
-  notes =        "carbon pairs in si",
+  notes =        "c_i c_s pair configuration, theoretical results",
+}
+
+@Article{song90_2,
+  title =        "Bistable interstitial-carbon--substitutional-carbon
+                 pair in silicon",
+  author =       "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
+                 Watkins",
+  journal =      "Phys. Rev. B",
+  volume =       "42",
+  number =       "9",
+  pages =        "5765--5783",
+  numpages =     "18",
+  year =         "1990",
+  month =        sep,
+  doi =          "10.1103/PhysRevB.42.5765",
+  publisher =    "American Physical Society",
+  notes =        "c_i c_s pair configuration, experimental results",
+}
+
+@Article{liu02,
+  author =       "Chun-Li Liu and Wolfgang Windl and Len Borucki and
+                 Shifeng Lu and Xiang-Yang Liu",
+  collaboration = "",
+  title =        "Ab initio modeling and experimental study of {C}--{B}
+                 interactions in Si",
+  publisher =    "AIP",
+  year =         "2002",
+  journal =      "Applied Physics Letters",
+  volume =       "80",
+  number =       "1",
+  pages =        "52--54",
+  keywords =     "silicon; boron; carbon; elemental semiconductors;
+                 impurity-defect interactions; ab initio calculations;
+                 secondary ion mass spectra; diffusion; interstitials",
+  URL =          "http://link.aip.org/link/?APL/80/52/1",
+  doi =          "10.1063/1.1430505",
+  notes =        "c-c 100 split, lower as a and b states of capaz",
 }
 
 @Article{dal_pino93,
@@ -917,25 +954,31 @@
   volume =       "",
   number =       "",
   pages =        "675--678",
-  keywords =     "beta;-SiC precipitates;30 s;700 to 1300 C;C
-                 atom/radiation induced defect interaction;C depth
-                 distribution;C precipitation;C-Si defects;C-Si
-                 dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
-                 energy ion implantation;ion implantation;metastable
-                 agglomerates;microdefects;positron annihilation
-                 spectroscopy;rapid thermal annealing;secondary ion mass
-                 spectrometry;vacancy clusters;buried
-                 layers;carbon;elemental semiconductors;impurity-defect
-                 interactions;ion implantation;positron
-                 annihilation;precipitation;rapid thermal
-                 annealing;secondary ion mass
-                 spectra;silicon;transmission electron
-                 microscopy;vacancies (crystal);",
   doi =          "10.1109/IIT.1996.586497",
   ISSN =         "",
   notes =        "c-si agglomerates dumbbells",
 }
 
+@Article{werner98,
+  author =       "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
+                 D. C. Jacobson",
+  collaboration = "",
+  title =        "Carbon diffusion in silicon",
+  publisher =    "AIP",
+  year =         "1998",
+  journal =      "Applied Physics Letters",
+  volume =       "73",
+  number =       "17",
+  pages =        "2465--2467",
+  keywords =     "silicon; carbon; elemental semiconductors; diffusion;
+                 secondary ion mass spectra; semiconductor epitaxial
+                 layers; annealing; impurity-defect interactions;
+                 impurity distribution",
+  URL =          "http://link.aip.org/link/?APL/73/2465/1",
+  doi =          "10.1063/1.122483",
+  notes =        "c diffusion in si, kick out mechnism",
+}
+
 @Article{strane94,
   author =       "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
                  Picraux and J. K. Watanabe and J. W. Mayer",
@@ -1179,8 +1222,8 @@
   ISSN =         "0928-4931",
   doi =          "DOI: 10.1016/j.msec.2005.09.099",
   URL =          "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
-  author =       "J. K. N. Lindner and M. Häberlen and G. Thorwarth and
-                 B. Stritzker",
+  author =       "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
+                 and B. Stritzker",
   notes =        "c int diffusion barrier",
 }
 
@@ -2799,6 +2842,21 @@
                  carbon defect, formation energies",
 }
 
+@Article{besson91,
+  title =        "Electronic structure of interstitial carbon in
+                 silicon",
+  author =       "Morgan Besson and Gary G. DeLeo",
+  journal =      "Phys. Rev. B",
+  volume =       "43",
+  number =       "5",
+  pages =        "4028--4033",
+  numpages =     "5",
+  year =         "1991",
+  month =        feb,
+  doi =          "10.1103/PhysRevB.43.4028",
+  publisher =    "American Physical Society",
+}
+
 @Article{kaxiras96,
   title =        "Review of atomistic simulations of surface diffusion
                  and growth on semiconductors",