X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=6b398401b1cf1f0c45e55430e411b490fd68653b;hb=25f85067d364e4b1616090994779e76e3954570b;hp=6971d1906de3274ee552f4f34b9617ee200cd7fb;hpb=86071f30dc5c7c3ee4a5e70aef0e0c122f1c380e;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 6971d19..6b39840 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -68,7 +68,7 @@ author = "G. R. Fisher and P. Barnes", title = "Towards a unified view of polytypism in silicon carbide", - journal = "Philosophical Magazine Part B", + journal = "Philos. Mag. B", volume = "61", pages = "217--236", year = "1990", @@ -82,7 +82,7 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A: Mater. Sci. Process.", volume = "76", pages = "827--835", month = mar, @@ -218,7 +218,7 @@ title = "Molecular dynamics with coupling to an external bath", publisher = "AIP", year = "1984", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "81", number = "8", pages = "3684--3690", @@ -235,8 +235,7 @@ title = "Molecular dynamics determination of defect energetics in beta -Si{C} using three representative empirical potentials", - journal = "Modelling and Simulation in Materials Science and - Engineering", + journal = "Modell. Simul. Mater. Sci. Eng.", volume = "3", number = "5", pages = "615--627", @@ -318,8 +317,7 @@ @Article{devanathan98, title = "Computer simulation of a 10 ke{V} Si displacement cascade in Si{C}", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "141", number = "1-4", pages = "118--122", @@ -334,7 +332,7 @@ @Article{devanathan98_2, title = "Displacement threshold energies in [beta]-Si{C}", - journal = "Journal of Nuclear Materials", + journal = "J. Nucl. Mater.", volume = "253", number = "1-3", pages = "47--52", @@ -386,7 +384,7 @@ presence of carbon and boron", publisher = "AIP", year = "1998", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "84", number = "4", pages = "1963--1967", @@ -515,7 +513,7 @@ @Article{hobler05, title = "Ab initio calculations of the interaction between native point defects in silicon", - journal = "Materials Science and Engineering: B", + journal = "Mater. Sci. Eng., B", volume = "124-125", number = "", pages = "368--371", @@ -600,11 +598,10 @@ @Article{gao02, title = "Empirical potential approach for defect properties in 3{C}-Si{C}", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "191", number = "1-4", - pages = "504--508", + pages = "487--496", year = "2002", note = "", ISSN = "0168-583X", @@ -643,7 +640,7 @@ in cubic silicon carbide", publisher = "AIP", year = "2007", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "90", number = "22", eid = "221915", @@ -750,7 +747,7 @@ interactions in Si", publisher = "AIP", year = "2002", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "80", number = "1", pages = "52--54", @@ -898,7 +895,7 @@ author = "A K Tipping and R C Newman", title = "The diffusion coefficient of interstitial carbon in silicon", - journal = "Semiconductor Science and Technology", + journal = "Semicond. Sci. Technol.", volume = "2", number = "5", pages = "315--317", @@ -924,7 +921,7 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - journal = "Materials Science and Engineering B", + journal = "Mater. Sci. Eng., B", volume = "89", number = "1-3", pages = "241--245", @@ -945,7 +942,7 @@ silicon by transmission electron microscopy", publisher = "AIP", year = "1997", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "70", number = "2", pages = "252--254", @@ -983,7 +980,7 @@ title = "Carbon diffusion in silicon", publisher = "AIP", year = "1998", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "73", number = "17", pages = "2465--2467", @@ -1004,7 +1001,7 @@ y]{C}[sub y]/Si heterostructures", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "6", pages = "3656--3668", @@ -1025,7 +1022,7 @@ strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "77", number = "5", pages = "1934--1937", @@ -1107,7 +1104,7 @@ @Article{zirkelbach09, title = "Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon", - journal = "Materials Science and Engineering: B", + journal = "Mater. Sci. Eng., B", volume = "159-160", number = "", pages = "149--152", @@ -1131,13 +1128,17 @@ @Article{zirkelbach10a, title = "Defects in carbon implanted silicon calculated by classical potentials and first-principles methods", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", journal = "Phys. Rev. B", volume = "82", number = "9", - pages = "", + pages = "094110", + numpages = "6", year = "2010", - author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. - K. N. Lindner and W. G. Schmidt and E. Rauls", + month = sep, + doi = "10.1103/PhysRevB.82.094110", + publisher = "American Physical Society", } @Article{zirkelbach10b, @@ -1167,8 +1168,7 @@ title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "147", number = "1-4", pages = "249--255", @@ -1184,8 +1184,7 @@ @Article{lindner99_2, title = "Mechanisms in the ion beam synthesis of Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "148", number = "1-4", pages = "528--533", @@ -1200,8 +1199,7 @@ @Article{lindner01, title = "Ion beam synthesis of buried Si{C} layers in silicon: Basic physical processes", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "178", number = "1-4", pages = "44--54", @@ -1229,7 +1227,7 @@ title = "On the balance between ion beam induced nanoparticle formation and displacive precipitate resolution in the {C}-Si system", - journal = "Materials Science and Engineering: C", + journal = "Mater. Sci. Eng., C", volume = "26", number = "5-7", pages = "857--861", @@ -1267,7 +1265,7 @@ title = "Phase Transition for a Hard Sphere System", publisher = "AIP", year = "1957", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "27", number = "5", pages = "1208--1209", @@ -1280,7 +1278,7 @@ title = "Studies in Molecular Dynamics. {I}. General Method", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "31", number = "2", pages = "459--466", @@ -1393,8 +1391,7 @@ @Article{wesch96, title = "Silicon carbide: synthesis and processing", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "116", number = "1-4", pages = "305--321", @@ -1414,7 +1411,7 @@ ZnSe-based semiconductor device technologies", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "3", pages = "1363--1398", @@ -1528,7 +1525,7 @@ @Article{tairov78, title = "Investigation of growth processes of ingots of silicon carbide single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "43", number = "2", pages = "209--212", @@ -1548,7 +1545,7 @@ cubic Si{C} for semiconductor devices", publisher = "AIP", year = "1983", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "42", number = "5", pages = "460--462", @@ -1567,7 +1564,7 @@ Si{C} on silicon", publisher = "AIP", year = "1987", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "61", number = "10", pages = "4889--4893", @@ -1602,7 +1599,7 @@ epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "73", number = "2", pages = "726--732", @@ -1623,7 +1620,7 @@ 6{H}-Si{C} substrates", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "14", pages = "1353--1355", @@ -1645,7 +1642,7 @@ silacyclobutane", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "2", pages = "1271--1273", @@ -1661,7 +1658,7 @@ title = "Epitaxial growth of Si{C} thin films on Si-stabilized [alpha]-Si{C}(0001) at low temperatures by solid-source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "154", number = "1-2", pages = "72--80", @@ -1681,7 +1678,7 @@ 6{H}--Si{C} by solid-source molecular beam epitaxy", publisher = "AIP", year = "1995", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "66", number = "23", pages = "3182--3184", @@ -1699,7 +1696,7 @@ {IMPLANTATION}", publisher = "AIP", year = "1971", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "18", number = "11", pages = "509--511", @@ -1717,7 +1714,7 @@ beam synthesis and incoherent lamp annealing", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "26", pages = "2242--2244", @@ -1734,7 +1731,7 @@ title = "Solubility of Carbon in Silicon and Germanium", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "30", number = "6", pages = "1551--1555", @@ -1751,7 +1748,7 @@ {B} in silicon", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "8", pages = "1150--1152", @@ -1766,8 +1763,7 @@ @Article{stolk95, title = "Implantation and transient boron diffusion: the role of the silicon self-interstitial", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "96", number = "1-2", pages = "187--195", @@ -1791,7 +1787,7 @@ diffusion in ion-implanted silicon", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "81", number = "9", pages = "6031--6050", @@ -1807,7 +1803,7 @@ of Si[sub 1 - y]{C}[sub y] random alloy layers", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "64", number = "3", pages = "324--326", @@ -1827,7 +1823,7 @@ - x - y]Ge[sub x]{C}[sub y]", publisher = "AIP", year = "1991", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "70", number = "4", pages = "2470--2472", @@ -1860,7 +1856,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1999", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "74", number = "6", pages = "836--838", @@ -1917,7 +1913,7 @@ month = may, doi = "10.1103/PhysRevLett.72.3578", publisher = "American Physical Society", - notes = "high c concentration in si, heterostructure, starined + notes = "high c concentration in si, heterostructure, strained si, dft", } @@ -1925,7 +1921,7 @@ title = "Electron Transport Model for Strained Silicon-Carbon Alloy", author = "Shu-Tong Chang and Chung-Yi Lin", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "44", number = "4B", pages = "2257--2262", @@ -1945,7 +1941,7 @@ Si(001)", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "82", number = "10", pages = "4977--4981", @@ -1999,7 +1995,7 @@ potential energy surfaces", publisher = "AIP", year = "2009", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "130", number = "11", eid = "114711", @@ -2020,7 +2016,7 @@ molecular dynamics method", publisher = "AIP", year = "1981", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "52", number = "12", pages = "7182--7190", @@ -2145,7 +2141,7 @@ simulation of infrequent events", publisher = "AIP", year = "1997", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "106", number = "11", pages = "4665--4677", @@ -2166,7 +2162,7 @@ infrequent events", publisher = "AIP", year = "2000", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "112", number = "21", pages = "9599--9606", @@ -2200,7 +2196,7 @@ simulation", publisher = "AIP", year = "1999", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "110", number = "19", pages = "9401--9410", @@ -2219,7 +2215,7 @@ to the production of amorphous silicon", publisher = "AIP", year = "2005", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "122", number = "15", eid = "154509", @@ -2240,7 +2236,7 @@ difficult?", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "62", number = "25", pages = "3336--3338", @@ -2254,7 +2250,7 @@ @Article{chaussende08, title = "Prospects for 3{C}-Si{C} bulk crystal growth", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "310", number = "5", pages = "976--981", @@ -2331,7 +2327,7 @@ 3{C}-Si{C}/Si (001) interface", publisher = "AIP", year = "2009", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "106", number = "7", eid = "073522", @@ -2355,7 +2351,7 @@ growth on Si(001) surface", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "7", pages = "4438--4445", @@ -2457,6 +2453,24 @@ notes = "dislocations in diamond lattice", } +@Article{deguchi92, + title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon + Ion `Hot' Implantation", + author = "Masahiro Deguchi and Makoto Kitabatake and Takashi + Hirao and Naoki Arai and Tomio Izumi", + journal = "Japanese Journal of Applied Physics", + volume = "31", + number = "Part 1, No. 2A", + pages = "343--347", + numpages = "4", + year = "1992", + URL = "http://jjap.ipap.jp/link?JJAP/31/343/", + doi = "10.1143/JJAP.31.343", + publisher = "The Japan Society of Applied Physics", + notes = "c-c bonds in c implanted si, hot implantation + efficiency, c-c hard to break by thermal annealing", +} + @Article{eichhorn99, author = "F. Eichhorn and N. Schell and W. Matz and R. K{\"{o}}gler", @@ -2466,7 +2480,7 @@ synchrotron x-ray diffraction", publisher = "AIP", year = "1999", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "86", number = "8", pages = "4184--4187", @@ -2487,7 +2501,7 @@ carbon ion implantation", publisher = "AIP", year = "2002", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "91", number = "3", pages = "1287--1292", @@ -2497,7 +2511,7 @@ URL = "http://link.aip.org/link/?JAP/91/1287/1", doi = "10.1063/1.1428105", notes = "3c-sic alignement to si host in ibs depending on - temperature, might explain c int to c sub trafo", + temperature, might explain c into c sub trafo", } @Article{lucas10, @@ -2506,7 +2520,7 @@ silicon carbide: calculation of bulk properties, high-pressure phases, point and extended defects, and amorphous structures", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "22", number = "3", pages = "035802", @@ -2520,7 +2534,7 @@ Beauchamp", title = "Comparison between classical potentials and ab initio methods for silicon under large shear", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "15", number = "41", pages = "6943", @@ -2534,7 +2548,7 @@ title = "Verification of Tersoff's Potential for Static Structural Analysis of Solids of Group-{IV} Elements", author = "Koji Moriguchi and Akira Shintani", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "37", number = "Part 1, No. 2", pages = "414--422", @@ -2583,8 +2597,7 @@ @Article{nordlund97, title = "Repulsive interatomic potentials calculated using Hartree-Fock and density-functional theory methods", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "132", number = "1", pages = "45--54", @@ -2601,7 +2614,7 @@ title = "Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "6", number = "1", pages = "15--50", @@ -2664,7 +2677,7 @@ title = "Accurate and simple density functional for the electronic exchange energy: Generalized gradient approximation", - author = "John P. Perdew and Wang Yue", + author = "John P. Perdew and Yue Wang", journal = "Phys. Rev. B", volume = "33", number = "12", @@ -2730,7 +2743,7 @@ @Article{zhu98, title = "Ab initio pseudopotential calculations of dopant diffusion in Si", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "12", number = "4", pages = "309--318", @@ -2756,7 +2769,7 @@ 950 [degree]{C}", publisher = "AIP", year = "1995", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "66", number = "20", pages = "2646--2648", @@ -2778,7 +2791,7 @@ alloys", publisher = "AIP", year = "1998", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "84", number = "8", pages = "4631--4633", @@ -2795,7 +2808,7 @@ author = "R Jones and B J Coomer and P R Briddon", title = "Quantum mechanical modelling of defects in semiconductors", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "16", number = "27", pages = "S2643", @@ -2814,7 +2827,7 @@ molecular-beam epitaxy", publisher = "AIP", year = "2002", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "91", number = "9", pages = "5716--5727", @@ -2877,7 +2890,7 @@ @Article{kaxiras96, title = "Review of atomistic simulations of surface diffusion and growth on semiconductors", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "6", number = "2", pages = "158--172", @@ -2933,7 +2946,7 @@ @Article{chen98, title = "Production and recovery of defects in Si{C} after irradiation and deformation", - journal = "Journal of Nuclear Materials", + journal = "J. Nucl. Mater.", volume = "258-263", number = "Part 2", pages = "1803--1808", @@ -2948,8 +2961,7 @@ @Article{weber01, title = "Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "175-177", number = "", pages = "26--30",