X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=71182911c50c827f02a10c9df2c908f63865e2bc;hb=c2a58bcaff43c65b589fdbf4a6f51e269369cd9d;hp=8f271b623fc3dc4825751b5d764aaf9cd24b1c9b;hpb=59031a549a2021e86439f61f5fb4e680f4615e83;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 8f271b6..7118291 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -85,13 +85,21 @@
   notes = {velocity verlet integration algorithm equation of motion}
 }
 
-@Article{berendsen84,
+@article{berendsen:3684,
+  author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren
+            and A. DiNola and J. R. Haak},
+  collaboration = {},
   title = {Molecular dynamics with coupling to an external bath},
-  author = {H. J. C. Berendsen},
+  publisher = {AIP},
   year = {1984},
-  journal = {J. Chem. Phys.},
+  journal = {The Journal of Chemical Physics},
   volume = {81},
-  pages = {3684},
+  number = {8},
+  pages = {3684-3690},
+  keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
+              COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS},
+  url = {http://link.aip.org/link/?JCP/81/3684/1},
+  doi = {10.1063/1.448118},
   notes = {berendsen thermostat barostat}
 }
 
@@ -277,8 +285,8 @@
 @Article{strane96,
   title = {Carbon incorporation into Si at high concentrations
            by ion implantation and solid phase epitaxy},
-  author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
-            J.K. Watanabe, J. W. Mayer},
+  author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
+            J. K. Watanabe and J. W. Mayer},
   journal = {J. Appl. Phys.},
   volume = {79},
   pages = {637},
@@ -288,6 +296,18 @@
   notes = {strained silicon, carbon supersaturation}
 }
 
+@article{laveant2002,
+  title = {Epitaxy of carbon-rich silicon with MBE},
+  author = {P. Laveant, G. Gerth, P. Werner, U. Gosele},
+  journal = {Materials Science and Engineering B},
+  volume = {89},
+  number = {1-3},
+  pages = {241-245},
+  keywords = {Growth; Epitaxy; MBE; Carbon; Silicon},
+  notes = {low c in si, tensile stress to compensate compressive stress,
+           avoid sic precipitation}}
+}
+
 % sic formation mechanism
 
 @article{werner97,