X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=71182911c50c827f02a10c9df2c908f63865e2bc;hb=c2a58bcaff43c65b589fdbf4a6f51e269369cd9d;hp=9488c83b192f51cb9a1971a57ba61e25fd8abec8;hpb=ada42e841e4f5e3d38779e7c0583e8e1fd3f00d6;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 9488c83..7118291 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -85,13 +85,21 @@
   notes = {velocity verlet integration algorithm equation of motion}
 }
 
-@Article{berendsen84,
+@article{berendsen:3684,
+  author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren
+            and A. DiNola and J. R. Haak},
+  collaboration = {},
   title = {Molecular dynamics with coupling to an external bath},
-  author = {H. J. C. Berendsen},
+  publisher = {AIP},
   year = {1984},
-  journal = {J. Chem. Phys.},
+  journal = {The Journal of Chemical Physics},
   volume = {81},
-  pages = {3684},
+  number = {8},
+  pages = {3684-3690},
+  keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
+              COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS},
+  url = {http://link.aip.org/link/?JCP/81/3684/1},
+  doi = {10.1063/1.448118},
   notes = {berendsen thermostat barostat}
 }
 
@@ -129,6 +137,34 @@
            configuration}
 }
 
+@Article{gao02,
+  title = {Cascade overlap and amorphization in $3C-SiC:$
+           Defect accumulation, topological features, and disordering},
+  author = {Gao, F.  and Weber, W. J.},
+  journal = {Phys. Rev. B},
+  volume = {66},
+  number = {2},
+  pages = {024106},
+  numpages = {10},
+  year = {2002},
+  month = {Jul},
+  doi = {10.1103/PhysRevB.66.024106},
+  publisher = {American Physical Society},
+  note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified,
+          pair correlation of amorphous sic, md result analyze}
+}
+
+@Article{batra87,
+  title = {SiC/Si heteroepitaxial growth},
+  author = {M. Kitabatake},
+  journal = {Thin Solid Films},
+  volume = {369},
+  pages = {257--264},
+  numpages = {8},
+  year = {2000},
+  notes = {md simulation, sic si heteroepitaxy, mbe}
+}
+
 % tight binding
 
 @Article{tang97,
@@ -213,7 +249,7 @@
   notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
 }
 
-% experimental stuff
+% experimental stuff - interstitials
 
 @Article{watkins76,
   title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
@@ -230,7 +266,7 @@
   notes = {epr observations of 100 interstitial carbon atom in silicon}
 }
 
-@Article{PhysRevB.42.5759,
+@Article{song90,
   title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
   author = {L. W. Song, G. D. Watkins},
   journal = {Phys. Rev. B},
@@ -244,13 +280,93 @@
   publisher = {American Physical Society}
 }
 
+% experimental stuff - strained silicon
+
+@Article{strane96,
+  title = {Carbon incorporation into Si at high concentrations
+           by ion implantation and solid phase epitaxy},
+  author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
+            J. K. Watanabe and J. W. Mayer},
+  journal = {J. Appl. Phys.},
+  volume = {79},
+  pages = {637},
+  year = {1996},
+  month = {January},
+  doi = {10.1063/1.360806},
+  notes = {strained silicon, carbon supersaturation}
+}
+
+@article{laveant2002,
+  title = {Epitaxy of carbon-rich silicon with MBE},
+  author = {P. Laveant, G. Gerth, P. Werner, U. Gosele},
+  journal = {Materials Science and Engineering B},
+  volume = {89},
+  number = {1-3},
+  pages = {241-245},
+  keywords = {Growth; Epitaxy; MBE; Carbon; Silicon},
+  notes = {low c in si, tensile stress to compensate compressive stress,
+           avoid sic precipitation}}
+}
+
+% sic formation mechanism
+
+@article{werner97,
+  author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
+  title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
+  publisher = {AIP},
+  year = {1997},
+  journal = {Applied Physics Letters},
+  volume = {70},
+  number = {2},
+  pages = {252-254},
+  keywords = {silicon; ion implantation; carbon; crystal defects;
+              transmission electron microscopy; annealing;
+	      positron annihilation; secondary ion mass spectroscopy;
+	      buried layers; precipitation},
+  url = {http://link.aip.org/link/?APL/70/252/1},
+  doi = {10.1063/1.118381},
+  notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
+}
+
+@article{strane94,
+  author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
+            J. K. Watanabe and J. W. Mayer},
+  collaboration = {},
+  title = {Precipitation and relaxation in strained
+           Si[sub 1 - y]C[sub y]/Si heterostructures},
+  publisher = {AIP},
+  year = {1994},
+  journal = {Journal of Applied Physics},
+  volume = {76},
+  number = {6},
+  pages = {3656-3668},
+  keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
+  url = {http://link.aip.org/link/?JAP/76/3656/1},
+  doi = {10.1063/1.357429},
+  notes = {strained si-c to 3c-sic, carbon nucleation + refs}
+}
+
+% properties sic
+
+@Article{edgar92,
+  title = {Prospects for device implementation of wide band gap semiconductors},
+  author = {J. H. Edgar},
+  journal = {J. Mater. Res.},
+  volume = {7},
+  pages = {235},
+  year = {1992},
+  month = {January},
+  doi = {10.1557/JMR.1992.0235},
+  notes = {properties wide band gap semiconductor, sic polytypes}
+}
+
 % my own publications
 
 @article{zirkelbach2007,
   title = {Monte Carlo simulation study of a selforganisation process
            leading to ordered precipitate structures},
   author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
-  journal = {Nucl. instr. and Meth. B},
+  journal = {Nucl. Instr. and Meth. B},
   volume = {257},
   number = {1--2},
   pages = {75--79},
@@ -265,7 +381,7 @@
   title = {Monte-Carlo simulation study of the self-organization of nanometric
            amorphous precipitates in regular arrays during ion irradiation},
   author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
-  journal = {Nucl. instr. and Meth. B},
+  journal = {Nucl. Instr. and Meth. B},
   volume = {242},
   number = {1--2},
   pages = {679--682},
@@ -291,3 +407,18 @@
   publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
 }
 
+% the one of my boss
+
+@Article{lindner02,
+  title = {High-dose carbon implantations into silicon:
+           fundamental studies for new technological tricks},
+  author = {J. K. N. Lindner},
+  journal = {Appl. Phys. A},
+  volume = {77},
+  pages = {27--38},
+  year = {2003},
+  doi = {10.1007/s00339-002-2062-8},
+  notes = {ibs, burried sic layers}
+}
+
+