X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=74bed2443c93fb68af2c058f16c20ddb31fa3d3c;hb=a7430237905bcb07c85d5ef0a2bac0d51210952a;hp=aa0d739f28163ff67ff6963cd7d63ed28754c140;hpb=79c478c936e275b0da4934004cb4748cf36f123f;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index aa0d739..74bed24 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -430,6 +430,24 @@
   publisher =    "American Physical Society",
 }
 
+@Article{bloechl93,
+  title =        "First-principles calculations of self-diffusion
+                 constants in silicon",
+  author =       "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
+                 and D. B. Laks and W. Andreoni and S. T. Pantelides",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "70",
+  number =       "16",
+  pages =        "2435--2438",
+  numpages =     "3",
+  year =         "1993",
+  month =        apr,
+  doi =          "10.1103/PhysRevLett.70.2435",
+  publisher =    "American Physical Society",
+  notes =        "si self int diffusion by ab initio md, formation
+                 entropy calculations",
+}
+
 @Article{colombo02,
   title =        "Tight-binding theory of native point defects in
                  silicon",
@@ -461,6 +479,22 @@
                  silicon, si self interstitials, free energy",
 }
 
+@Article{goedecker02,
+  title =        "A Fourfold Coordinated Point Defect in Silicon",
+  author =       "Stefan Goedecker and Thierry Deutsch and Luc Billard",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "88",
+  number =       "23",
+  pages =        "235501",
+  numpages =     "4",
+  year =         "2002",
+  month =        may,
+  doi =          "10.1103/PhysRevLett.88.235501",
+  publisher =    "American Physical Society",
+  notes =        "first time ffcd, fourfold coordinated point defect in
+                 silicon",
+}
+
 @Article{ma10,
   title =        "Ab initio study of self-diffusion in silicon over a
                  wide temperature range: Point defect states and
@@ -992,6 +1026,65 @@
                  NETHERLANDS",
 }
 
+@Article{zirkelbach09,
+  title =        "Molecular dynamics simulation of defect formation and
+                 precipitation in heavily carbon doped silicon",
+  journal =      "Materials Science and Engineering: B",
+  volume =       "159-160",
+  number =       "",
+  pages =        "149--152",
+  year =         "2009",
+  note =         "EMRS 2008 Spring Conference Symposium K: Advanced
+                 Silicon Materials Research for Electronic and
+                 Photovoltaic Applications",
+  ISSN =         "0921-5107",
+  doi =          "DOI: 10.1016/j.mseb.2008.10.010",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
+  author =       "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
+                 B. Stritzker",
+  keywords =     "Silicon",
+  keywords =     "Carbon",
+  keywords =     "Silicon carbide",
+  keywords =     "Nucleation",
+  keywords =     "Defect formation",
+  keywords =     "Molecular dynamics simulations",
+}
+
+@Article{zirkelbach10a,
+  title =        "Defects in Carbon implanted Silicon calculated by
+                 classical potentials and first principles methods",
+  journal =      "to be published",
+  volume =       "",
+  number =       "",
+  pages =        "",
+  year =         "2010",
+  author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+                 K. N. Lindner and W. G. Schmidtd and E. Rauls",
+}
+
+@Article{zirkelbach10b,
+  title =        "Extensive first principles study of carbon defects in
+                 silicon",
+  journal =      "to be published",
+  volume =       "",
+  number =       "",
+  pages =        "",
+  year =         "2010",
+  author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+                 K. N. Lindner and W. G. Schmidtd and E. Rauls",
+}
+
+@Article{zirkelbach10c,
+  title =        "...",
+  journal =      "to be published",
+  volume =       "",
+  number =       "",
+  pages =        "",
+  year =         "2010",
+  author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+                 K. N. Lindner and W. G. Schmidtd and E. Rauls",
+}
+
 @Article{lindner99,
   title =        "Controlling the density distribution of Si{C}
                  nanocrystals for the ion beam synthesis of buried Si{C}
@@ -1054,6 +1147,25 @@
   notes =        "ibs, burried sic layers",
 }
 
+@Article{lindner06,
+  title =        "On the balance between ion beam induced nanoparticle
+                 formation and displacive precipitate resolution in the
+                 {C}-Si system",
+  journal =      "Materials Science and Engineering: C",
+  volume =       "26",
+  number =       "5-7",
+  pages =        "857--861",
+  year =         "2006",
+  note =         "Current Trends in Nanoscience - from Materials to
+                 Applications",
+  ISSN =         "0928-4931",
+  doi =          "DOI: 10.1016/j.msec.2005.09.099",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
+  author =       "J. K. N. Lindner and M. Häberlen and G. Thorwarth and
+                 B. Stritzker",
+  notes =        "c int diffusion barrier",
+}
+
 @Article{ito04,
   title =        "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
                  application in buffer layer for Ga{N} epitaxial