X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=761a8d39c519e60989d980ff3711690bd3ef3a52;hb=b0738b091c5e345a265200a18abdc0dc846bf9b4;hp=83dedd2957b08d776b9f9e36ec9125d18b020438;hpb=9965e19a285d1af2b8b0a47d62f95904c6507a3f;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 83dedd2..761a8d3 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1732,6 +1732,22 @@
   notes =        "improved sic on off-axis si substrates, reduced apbs",
 }
 
+@Article{ueda90,
+  title =        "Crystal growth of Si{C} by step-controlled epitaxy",
+  journal =      "Journal of Crystal Growth",
+  volume =       "104",
+  number =       "3",
+  pages =        "695--700",
+  year =         "1990",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(90)90013-B",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
+  author =       "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
+                 Matsunami",
+  notes =        "step-controlled epitaxy model",
+}
+
 @Article{kimoto93,
   author =       "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
                  and Hiroyuki Matsunami",
@@ -1751,6 +1767,49 @@
   notes =        "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
 }
 
+@Article{powell90_2,
+  author =       "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+                 J. Choyke and J. L. Bradshaw and L. Henderson and M.
+                 Yoganathan and J. Yang and P. Pirouz",
+  collaboration = "",
+  title =        "Growth of high quality 6{H}-Si{C} epitaxial films on
+                 vicinal (0001) 6{H}-Si{C} wafers",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Applied Physics Letters",
+  volume =       "56",
+  number =       "15",
+  pages =        "1442--1444",
+  keywords =     "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+                 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
+                 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
+                 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
+  URL =          "http://link.aip.org/link/?APL/56/1442/1",
+  doi =          "10.1063/1.102492",
+  notes =        "cvd of 6h-sic on 6h-sic",
+}
+
+@Article{kong88_2,
+  author =       "H. S. Kong and J. T. Glass and R. F. Davis",
+  collaboration = "",
+  title =        "Chemical vapor deposition and characterization of
+                 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
+                 substrates",
+  publisher =    "AIP",
+  year =         "1988",
+  journal =      "Journal of Applied Physics",
+  volume =       "64",
+  number =       "5",
+  pages =        "2672--2679",
+  keywords =     "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
+                 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
+                 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
+                 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
+                 PHASE EPITAXY; CRYSTAL ORIENTATION",
+  URL =          "http://link.aip.org/link/?JAP/64/2672/1",
+  doi =          "10.1063/1.341608",
+}
+
 @Article{powell90,
   author =       "J. A. Powell and D. J. Larkin and L. G. Matus and W.
                  J. Choyke and J. L. Bradshaw and L. Henderson and M.
@@ -1773,6 +1832,48 @@
   notes =        "cvd of 3c-sic on 6h-sic",
 }
 
+@Article{kong88,
+  author =       "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
+                 Rozgonyi and K. L. More",
+  collaboration = "",
+  title =        "An examination of double positioning boundaries and
+                 interface misfit in beta-Si{C} films on alpha-Si{C}
+                 substrates",
+  publisher =    "AIP",
+  year =         "1988",
+  journal =      "Journal of Applied Physics",
+  volume =       "63",
+  number =       "8",
+  pages =        "2645--2650",
+  keywords =     "SILICON CARBIDES; INTERFACES; SILICON; STACKING
+                 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
+                 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
+                 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
+                 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
+  URL =          "http://link.aip.org/link/?JAP/63/2645/1",
+  doi =          "10.1063/1.341004",
+}
+
+@Article{powell91,
+  author =       "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
+                 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
+                 and W. J. Choyke and L. Clemen and M. Yoganathan",
+  collaboration = "",
+  title =        "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
+                 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
+  publisher =    "AIP",
+  year =         "1991",
+  journal =      "Applied Physics Letters",
+  volume =       "59",
+  number =       "3",
+  pages =        "333--335",
+  keywords =     "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
+                 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
+                 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
+  URL =          "http://link.aip.org/link/?APL/59/333/1",
+  doi =          "10.1063/1.105587",
+}
+
 @Article{yuan95,
   author =       "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
                  Thokala and M. J. Loboda",