X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=793ad39d8ec881cc0df460ebc511cd02b2f15592;hb=86ab4cc17acb522761e992c818f4ee65a07ae1d4;hp=8556c401503113cdf334c01de51adc2dbabedaf8;hpb=caebb70f0d66dabdef917b2563ec1742c5144441;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 8556c40..793ad39 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -41,12 +41,17 @@ } @Article{bean71, - author = "A. R. Bean and R. C. Newman", - title = "", - journal = "J. Phys. Chem. Solids", + title = "The solubility of carbon in pulled silicon crystals", + journal = "Journal of Physics and Chemistry of Solids", volume = "32", - pages = "1211", + number = "6", + pages = "1211--1219", year = "1971", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/S0022-3697(71)80179-8", + URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5", + author = "A. R. Bean and R. C. Newman", notes = "experimental solubility data of carbon in silicon", } @@ -71,9 +76,9 @@ } @Article{koegler03, - author = "R. Kögler and F. Eichhorn and J. R. Kaschny and A. - Mücklich and H. Reuther and W. Skorupa and C. Serre and - A. Perez-Rodriguez", + author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and + A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C. + Serre and A. Perez-Rodriguez", title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", @@ -82,7 +87,9 @@ pages = "827--835", month = mar, year = "2003", - notes = "dual implantation, sic prec enhanced by vacancies", + notes = "dual implantation, sic prec enhanced by vacancies, + precipitation by interstitial and substitutional + carbon, both mechanisms explained + refs", } @Book{laplace, @@ -289,7 +296,7 @@ dumbbell configuration", } -@Article{gao02, +@Article{gao02a, title = "Cascade overlap and amorphization in $3{C}-Si{C}:$ Defect accumulation, topological features, and disordering", @@ -370,6 +377,28 @@ notes = "si self interstitial, diffusion, tbmd", } +@Article{johnson98, + author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la + Rubia", + collaboration = "", + title = "A kinetic Monte--Carlo study of the effective + diffusivity of the silicon self-interstitial in the + presence of carbon and boron", + publisher = "AIP", + year = "1998", + journal = "Journal of Applied Physics", + volume = "84", + number = "4", + pages = "1963--1967", + keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS; + CARBON ADDITIONS; BORON ADDITIONS; elemental + semiconductors; self-diffusion", + URL = "http://link.aip.org/link/?JAP/84/1963/1", + doi = "10.1063/1.368328", + notes = "kinetic monte carlo of si self interstitial + diffsuion", +} + @Article{bar-yam84, title = "Barrier to Migration of the Silicon Self-Interstitial", @@ -386,6 +415,39 @@ notes = "si self-interstitial migration barrier", } +@Article{bar-yam84_2, + title = "Electronic structure and total-energy migration + barriers of silicon self-interstitials", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "30", + number = "4", + pages = "1844--1852", + numpages = "8", + year = "1984", + month = aug, + doi = "10.1103/PhysRevB.30.1844", + publisher = "American Physical Society", +} + +@Article{bloechl93, + title = "First-principles calculations of self-diffusion + constants in silicon", + author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car + and D. B. Laks and W. Andreoni and S. T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "70", + number = "16", + pages = "2435--2438", + numpages = "3", + year = "1993", + month = apr, + doi = "10.1103/PhysRevLett.70.2435", + publisher = "American Physical Society", + notes = "si self int diffusion by ab initio md, formation + entropy calculations", +} + @Article{colombo02, title = "Tight-binding theory of native point defects in silicon", @@ -414,7 +476,41 @@ doi = "10.1103/PhysRevB.68.235205", publisher = "American Physical Society", notes = "formation energies of intrinisc point defects in - silicon, si self interstitials", + silicon, si self interstitials, free energy", +} + +@Article{goedecker02, + title = "A Fourfold Coordinated Point Defect in Silicon", + author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", + journal = "Phys. Rev. Lett.", + volume = "88", + number = "23", + pages = "235501", + numpages = "4", + year = "2002", + month = may, + doi = "10.1103/PhysRevLett.88.235501", + publisher = "American Physical Society", + notes = "first time ffcd, fourfold coordinated point defect in + silicon", +} + +@Article{hobler05, + title = "Ab initio calculations of the interaction between + native point defects in silicon", + journal = "Materials Science and Engineering: B", + volume = "124-125", + number = "", + pages = "368--371", + year = "2005", + note = "EMRS 2005, Symposium D - Materials Science and Device + Issues for Future Technologies", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2005.08.072", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4", + author = "G. Hobler and G. Kresse", + notes = "vasp intrinsic si defect interaction study, capture + radius", } @Article{ma10, @@ -434,6 +530,21 @@ notes = "si self interstitial diffusion + refs", } +@Article{posselt06, + title = "Atomistic simulations on the thermal stability of the + antisite pair in 3{C}- and 4{H}-Si{C}", + author = "M. Posselt and F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "73", + number = "12", + pages = "125206", + numpages = "8", + year = "2006", + month = mar, + doi = "10.1103/PhysRevB.73.125206", + publisher = "American Physical Society", +} + @Article{posselt08, title = "Correlation between self-diffusion in Si and the migration mechanisms of vacancies and @@ -469,6 +580,67 @@ notes = "defects in 3c-sic", } +@Article{gao02, + title = "Empirical potential approach for defect properties in + 3{C}-Si{C}", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "191", + number = "1-4", + pages = "504--508", + year = "2002", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(02)00600-6", + URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7", + author = "Fei Gao and William J. Weber", + keywords = "Empirical potential", + keywords = "Defect properties", + keywords = "Silicon carbide", + keywords = "Computer simulation", + notes = "sic potential, brenner type, like erhart/albe", +} + +@Article{gao04, + title = "Atomistic study of intrinsic defect migration in + 3{C}-Si{C}", + author = "Fei Gao and William J. Weber and M. Posselt and V. + Belko", + journal = "Phys. Rev. B", + volume = "69", + number = "24", + pages = "245205", + numpages = "5", + year = "2004", + month = jun, + doi = "10.1103/PhysRevB.69.245205", + publisher = "American Physical Society", + notes = "defect migration in sic", +} + +@Article{gao07, + author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and + W. J. Weber", + collaboration = "", + title = "Ab Initio atomic simulations of antisite pair recovery + in cubic silicon carbide", + publisher = "AIP", + year = "2007", + journal = "Applied Physics Letters", + volume = "90", + number = "22", + eid = "221915", + numpages = "3", + pages = "221915", + keywords = "ab initio calculations; silicon compounds; antisite + defects; wide band gap semiconductors; molecular + dynamics method; density functional theory; + electron-hole recombination; photoluminescence; + impurities; diffusion", + URL = "http://link.aip.org/link/?APL/90/221915/1", + doi = "10.1063/1.2743751", +} + @Article{mattoni2002, title = "Self-interstitial trapping by carbon complexes in crystalline silicon", @@ -507,7 +679,7 @@ @Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -521,10 +693,25 @@ dumbbell", } +@Article{capaz98, + title = "Theory of carbon-carbon pairs in silicon", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "58", + number = "15", + pages = "9845--9850", + numpages = "5", + year = "1998", + month = oct, + doi = "10.1103/PhysRevB.58.9845", + publisher = "American Physical Society", + notes = "carbon pairs in si", +} + @Article{dal_pino93, title = "Ab initio investigation of carbon-related defects in silicon", - author = "A. Dal Pino and Andrew M. Rappe and J. D. + author = "A. {Dal Pino} and Andrew M. Rappe and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "47", @@ -640,7 +827,7 @@ @Article{song90, title = "{EPR} identification of the single-acceptor state of interstitial carbon in silicon", - author = "G. D. Watkins L. W. Song", + author = "L. W. Song and G. D. Watkins", journal = "Phys. Rev. B", volume = "42", number = "9", @@ -683,13 +870,16 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - author = "P. Laveant and G. Gerth and P. Werner and U. - G{\"o}sele", journal = "Materials Science and Engineering B", volume = "89", number = "1-3", pages = "241--245", - keywords = "Growth; Epitaxy; MBE; Carbon; Silicon", + year = "2002", + ISSN = "0921-5107", + doi = "DOI: 10.1016/S0921-5107(01)00794-2", + URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268", + author = "P. Lav\'eant and G. Gerth and P. Werner and U. + G{\"{o}}sele", notes = "low c in si, tensile stress to compensate compressive stress, avoid sic precipitation", } @@ -716,7 +906,7 @@ } @InProceedings{werner96, - author = "P. Werner and R. Koegler and W. Skorupa and D. + author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. Eichler", booktitle = "Ion Implantation Technology. Proceedings of the 11th International Conference on", @@ -761,7 +951,30 @@ keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", URL = "http://link.aip.org/link/?JAP/76/3656/1", doi = "10.1063/1.357429", - notes = "strained si-c to 3c-sic, carbon nucleation + refs", + notes = "strained si-c to 3c-sic, carbon nucleation + refs, + precipitation by substitutional carbon, coherent prec, + coherent to incoherent transition strain vs interface + energy", +} + +@Article{fischer95, + author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J. + Osten", + collaboration = "", + title = "Investigation of the high temperature behavior of + strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "77", + number = "5", + pages = "1934--1937", + keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS; + XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE + PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION; + TEMPERATURE RANGE 04001000 K", + URL = "http://link.aip.org/link/?JAP/77/1934/1", + doi = "10.1063/1.358826", } @Article{edgar92, @@ -831,6 +1044,65 @@ NETHERLANDS", } +@Article{zirkelbach09, + title = "Molecular dynamics simulation of defect formation and + precipitation in heavily carbon doped silicon", + journal = "Materials Science and Engineering: B", + volume = "159-160", + number = "", + pages = "149--152", + year = "2009", + note = "EMRS 2008 Spring Conference Symposium K: Advanced + Silicon Materials Research for Electronic and + Photovoltaic Applications", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2008.10.010", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39", + author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and + B. Stritzker", + keywords = "Silicon", + keywords = "Carbon", + keywords = "Silicon carbide", + keywords = "Nucleation", + keywords = "Defect formation", + keywords = "Molecular dynamics simulations", +} + +@Article{zirkelbach10a, + title = "Defects in Carbon implanted Silicon calculated by + classical potentials and first principles methods", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidtd and E. Rauls", +} + +@Article{zirkelbach10b, + title = "Extensive first principles study of carbon defects in + silicon", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidtd and E. Rauls", +} + +@Article{zirkelbach10c, + title = "...", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidtd and E. Rauls", +} + @Article{lindner99, title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} @@ -878,7 +1150,7 @@ ISSN = "0168-583X", doi = "DOI: 10.1016/S0168-583X(01)00504-3", URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", - author = "Jörg K. N. Lindner", + author = "J{\"{o}}rg K. N. Lindner", } @Article{lindner02, @@ -893,6 +1165,25 @@ notes = "ibs, burried sic layers", } +@Article{lindner06, + title = "On the balance between ion beam induced nanoparticle + formation and displacive precipitate resolution in the + {C}-Si system", + journal = "Materials Science and Engineering: C", + volume = "26", + number = "5-7", + pages = "857--861", + year = "2006", + note = "Current Trends in Nanoscience - from Materials to + Applications", + ISSN = "0928-4931", + doi = "DOI: 10.1016/j.msec.2005.09.099", + URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a", + author = "J. K. N. Lindner and M. Häberlen and G. Thorwarth and + B. Stritzker", + notes = "c int diffusion barrier", +} + @Article{ito04, title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial @@ -1073,6 +1364,19 @@ FILMS; INDUSTRY", URL = "http://link.aip.org/link/?JAP/76/1363/1", doi = "10.1063/1.358463", + notes = "sic intro, properties", +} + +@Article{neudeck95, + author = "P. G. Neudeck", + title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} + {ELECTRONICS} {TECHNOLOGY}", + journal = "Journal of Electronic Materials", + year = "1995", + volume = "24", + number = "4", + pages = "283--288", + month = apr, } @Article{foo, @@ -1130,6 +1434,7 @@ doi = "DOI: 10.1016/0038-1101(96)00045-7", URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b", author = "J. B. Casady and R. W. Johnson", + notes = "sic intro", } @Article{giancarli98, @@ -1168,7 +1473,7 @@ number = "2", pages = "209--212", year = "1978", - notes = "modifief lely process", + notes = "modified lely process", ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(78)90169-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc", @@ -1304,8 +1609,8 @@ ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(95)00170-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", - author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter - and W. Richter", + author = "A. Fissel and U. Kaiser and E. Ducke and B. + Schr{\"{o}}ter and W. Richter", notes = "solid source mbe of 3c-sic on si and 6h-sic", } @@ -1375,7 +1680,7 @@ pages = "1551--1555", URL = "http://link.aip.org/link/?JCP/30/1551/1", doi = "10.1063/1.1730236", - notes = "solubility of c in c-si", + notes = "solubility of c in c-si, si-c phase diagram", } @Article{cowern96, @@ -1737,8 +2042,8 @@ @Article{justo98, title = "Interatomic potential for silicon defects and disordered phases", - author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios - Kaxiras and V. V. Bulatov and Sidney Yip", + author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and + Efthimios Kaxiras and V. V. Bulatov and Sidney Yip", journal = "Phys. Rev. B", volume = "58", number = "5", @@ -2003,6 +2308,44 @@ model, interface", } +@Article{chirita97, + title = "Strain relaxation and thermal stability of the + 3{C}-Si{C}(001)/Si(001) interface: {A} molecular + dynamics study", + journal = "Thin Solid Films", + volume = "294", + number = "1-2", + pages = "47--49", + year = "1997", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/S0040-6090(96)09257-7", + URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4", + author = "V. Chirita and L. Hultman and L. R. Wallenberg", + keywords = "Strain relaxation", + keywords = "Interfaces", + keywords = "Thermal stability", + keywords = "Molecular dynamics", + notes = "tersoff sic/si interface study", +} + +@Article{cicero02, + title = "Ab initio Study of Misfit Dislocations at the + $Si{C}/Si(001)$ Interface", + author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra + Catellani", + journal = "Phys. Rev. Lett.", + volume = "89", + number = "15", + pages = "156101", + numpages = "4", + year = "2002", + month = sep, + doi = "10.1103/PhysRevLett.89.156101", + publisher = "American Physical Society", + notes = "sic/si interface study", +} + @Article{pizzagalli03, title = "Theoretical investigations of a highly mismatched interface: Si{C}/Si(001)", @@ -2072,8 +2415,8 @@ precipitation; semiconductor doping", URL = "http://link.aip.org/link/?JAP/86/4184/1", doi = "10.1063/1.371344", - notes = "sic conversion by ibs, detected substitutional - carbon", + notes = "sic conversion by ibs, detected substitutional carbon, + expansion of si lattice", } @Article{eichhorn02, @@ -2143,6 +2486,22 @@ notes = "tersoff stringent test", } +@Article{mazzarolo01, + title = "Low-energy recoils in crystalline silicon: Quantum + simulations", + author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio + Lulli and Eros Albertazzi", + journal = "Phys. Rev. B", + volume = "63", + number = "19", + pages = "195207", + numpages = "4", + year = "2001", + month = apr, + doi = "10.1103/PhysRevB.63.195207", + publisher = "American Physical Society", +} + @Article{holmstroem08, title = "Threshold defect production in silicon determined by density functional theory molecular dynamics @@ -2191,7 +2550,7 @@ ISSN = "0927-0256", doi = "DOI: 10.1016/0927-0256(96)00008-0", URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74", - author = "G. Kresse and J. Furthmüller", + author = "G. Kresse and J. Furthm{\"{u}}ller", notes = "vasp ref", } @@ -2369,7 +2728,7 @@ annealing", URL = "http://link.aip.org/link/?JAP/84/4631/1", doi = "10.1063/1.368703", - notes = "coherent 3C-SiC, topotactic", + notes = "coherent 3C-SiC, topotactic, critical coherence size", } @Article{jones04, @@ -2384,3 +2743,182 @@ year = "2004", notes = "ab inito init, vibrational modes, c defect in si", } + +@Article{park02, + author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. + T Soares and Y.-W. Kim and H. Kim and P. Desjardins and + J. E. Greene and S. G. Bishop", + collaboration = "", + title = "Carbon incorporation pathways and lattice sites in + Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by + molecular-beam epitaxy", + publisher = "AIP", + year = "2002", + journal = "Journal of Applied Physics", + volume = "91", + number = "9", + pages = "5716--5727", + URL = "http://link.aip.org/link/?JAP/91/5716/1", + doi = "10.1063/1.1465122", + notes = "c substitutional incorporation pathway, dft and expt", +} + +@Article{leary97, + title = "Dynamic properties of interstitial carbon and + carbon-carbon pair defects in silicon", + author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B. + Torres", + journal = "Phys. Rev. B", + volume = "55", + number = "4", + pages = "2188--2194", + numpages = "6", + year = "1997", + month = jan, + doi = "10.1103/PhysRevB.55.2188", + publisher = "American Physical Society", + notes = "ab initio c in si and di-carbon defect, no formation + energies, different migration barriers and paths", +} + +@Article{burnard93, + title = "Interstitial carbon and the carbon-carbon pair in + silicon: Semiempirical electronic-structure + calculations", + author = "Matthew J. Burnard and Gary G. DeLeo", + journal = "Phys. Rev. B", + volume = "47", + number = "16", + pages = "10217--10225", + numpages = "8", + year = "1993", + month = apr, + doi = "10.1103/PhysRevB.47.10217", + publisher = "American Physical Society", + notes = "semi empirical mndo, pm3 and mindo3 c in si and di + carbon defect, formation energies", +} + +@Article{kaxiras96, + title = "Review of atomistic simulations of surface diffusion + and growth on semiconductors", + journal = "Computational Materials Science", + volume = "6", + number = "2", + pages = "158--172", + year = "1996", + note = "Proceedings of the Workshop on Virtual Molecular Beam + Epitaxy", + ISSN = "0927-0256", + doi = "DOI: 10.1016/0927-0256(96)00030-4", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6", + author = "Efthimios Kaxiras", + notes = "might contain c 100 db formation energy, overview md, + tight binding, first principles", +} + +@Article{kaukonen98, + title = "Effect of {N} and {B} doping on the growth of {CVD} + diamond + $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$ + surfaces", + author = "M. 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