X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=81d9a5ec89e5e6e25ccc36df0548d94e61ba85bd;hb=5db92af8eef3fb2d4d4e7c1b37c1add5751efcac;hp=bd00b0f12f1f003c251ca2d8fcb8e2afb7af7cdb;hpb=5aca50e47a686f19f92f88aa7dfff05ab34175b1;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index bd00b0f..81d9a5e 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,16 @@ notes = "derivation of albe bond order formalism", } +@Article{bean71, + author = "A. R. Bean and R. C. Newman", + title = "", + journal = "J. Phys. Chem. Solids", + volume = "32", + pages = "1211", + year = "1971", + notes = "experimental solubility data of carbon in silicon", +} + @Article{capano97, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", @@ -49,6 +59,17 @@ year = "1997", } +@Article{fischer90, + author = "G. R. Fisher and P. Barnes", + title = "Towards a unified view of polytypism in silicon + carbide", + journal = "Philosophical Magazine Part B", + volume = "61", + pages = "217--236", + year = "1990", + notes = "sic polytypes", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -107,6 +128,16 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{moissan04, + author = "Henri Moissan", + title = "Nouvelles recherches sur la météorité de Cañon + Diablo", + journal = "Comptes rendus de l'Académie des Sciences", + volume = "139", + pages = "773--786", + year = "1904", +} + @Book{park98, author = "Y. S. Park", title = "Si{C} Materials and Devices", @@ -369,13 +400,14 @@ month = sep, doi = "10.1103/PhysRevLett.83.2351", publisher = "American Physical Society", - notes = "nice images of the defects", + notes = "nice images of the defects, si defect overview + + refs", } -@Article{capazd94, +@Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos", + author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -389,6 +421,23 @@ dumbbell", } +@Article{dal_pino93, + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. Dal Pino and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", +} + @Article{car84, title = "Microscopic Theory of Atomic Diffusion Mechanisms in Silicon", @@ -440,6 +489,21 @@ notes = "mc md, strain compensation in si ge by c insertion", } +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Communications", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -470,6 +534,21 @@ month = sep, doi = "10.1103/PhysRevB.42.5759", publisher = "American Physical Society", + notes = "carbon diffusion in silicon", +} + +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semiconductor Science and Technology", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", } @Article{strane96, @@ -768,6 +847,20 @@ publisher = "American Physical Society", } +@Article{tersoff90, + title = "Carbon defects and defect reactions in silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "64", + number = "15", + pages = "1757--1760", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevLett.64.1757", + publisher = "American Physical Society", +} + @Article{fahey89, title = "Point defects and dopant diffusion in silicon", author = "P. M. Fahey and P. B. Griffin and J. D. Plummer", @@ -1079,6 +1172,25 @@ and J. M. Poate", } +@Article{stolk97, + author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and + D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and + M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T. + E. Haynes", + collaboration = "", + title = "Physical mechanisms of transient enhanced dopant + diffusion in ion-implanted silicon", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "81", + number = "9", + pages = "6031--6050", + URL = "http://link.aip.org/link/?JAP/81/6031/1", + doi = "10.1063/1.364452", + notes = "ted, transient enhanced diffusion, c silicon trap" +} + @Article{powell94, author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", collaboration = "", @@ -1235,3 +1347,75 @@ doi = "10.1063/1.366364", notes = "charge transport in strained si", } + +@Article{PhysRevB.69.155214, + title = "Carbon-mediated aggregation of self-interstitials in + silicon: {A} large-scale molecular dynamics study", + author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", + journal = "Phys. Rev. B", + volume = "69", + number = "15", + pages = "155214", + numpages = "8", + year = "2004", + month = apr, + doi = "10.1103/PhysRevB.69.155214", + publisher = "American Physical Society", + notes = "simulation using promising tersoff reparametrization", +} + +@Article{tang95, + title = "Atomistic simulation of thermomechanical properties of + \beta{}-Si{C}", + author = "Meijie Tang and Sidney Yip", + journal = "Phys. Rev. B", + volume = "52", + number = "21", + pages = "15150--15159", + numpages = "9", + year = "1995", + month = dec, + doi = "10.1103/PhysRevB.52.15150", + publisher = "American Physical Society", + notes = "promising tersoff reparametrization", +} + +@Article{barkema96, + title = "Event-Based Relaxation of Continuous Disordered + Systems", + author = "G. T. Barkema and Normand Mousseau", + journal = "Phys. Rev. Lett.", + volume = "77", + number = "21", + pages = "4358--4361", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4358", + publisher = "American Physical Society", + notes = "activation relaxation technique, art, speed up slow + dynamic mds", +} + +@Article{cances09, + author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K. + Minoukadeh and F. Willaime", + collaboration = "", + title = "Some improvements of the activation-relaxation + technique method for finding transition pathways on + potential energy surfaces", + publisher = "AIP", + year = "2009", + journal = "The Journal of Chemical Physics", + volume = "130", + number = "11", + eid = "114711", + numpages = "6", + pages = "114711", + keywords = "eigenvalues and eigenfunctions; iron; potential energy + surfaces; vacancies (crystal)", + URL = "http://link.aip.org/link/?JCP/130/114711/1", + doi = "10.1063/1.3088532", + notes = "improvements to art, refs for methods to find + transition pathways", +}