X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=92eba98adbb6cdf810181bcbd81153a9e3a40f0b;hb=0127fc6e8906f9b16769fa067f65bc309e37d70a;hp=e575307a37bc3301e89a5c2ef13f34714a2bd625;hpb=45c64a012b9adeee522d428c19bc6f263d7c47b9;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index e575307..92eba98 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1605,7 +1605,6 @@ year = "1994", doi = "10.1557/PROC-354-171", URL = "http://dx.doi.org/10.1557/PROC-354-171", - eprint = "http://journals.cambridge.org/article_S1946427400420853", notes = "first time ibs at moderate temperatures", } @@ -2242,6 +2241,22 @@ notes = "cvd of 3c-sic on si, sic buffer layer", } +@Article{nagasawa06, + author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta", + title = "Reducing Planar Defects in 3{C}¿Si{C}", + journal = "Chemical Vapor Deposition", + volume = "12", + number = "8-9", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3862", + URL = "http://dx.doi.org/10.1002/cvde.200506466", + doi = "10.1002/cvde.200506466", + pages = "502--508", + keywords = "Defect structures, Epitaxy, Silicon carbide", + year = "2006", + notes = "cvd on si", +} + @Article{nishino87, author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono and Hiroyuki Matsunami", @@ -4642,7 +4657,7 @@ Road 44135 Cleveland OH", title = "Progress in silicon carbide semiconductor electronics technology", - journal = "Journal of Electronic Materials", + journal = "J. Electron. Mater.", publisher = "Springer Boston", ISSN = "0361-5235", keyword = "Chemistry and Materials Science", @@ -4655,6 +4670,57 @@ notes = "sic data, advantages of 3c sic", } +@InProceedings{pribble02, + author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and + R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring + and J. J. Sumakeris and A. W. Saxler and J. W. + Milligan", + booktitle = "Microwave Symposium Digest, 2002 IEEE MTT-S + International", + title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in + power amplifier design", + year = "2002", + month = "", + volume = "", + number = "", + pages = "1819--1822", + doi = "10.1109/MWSYM.2002.1012216", + ISSN = "", + notes = "hdtv", +} + +@InProceedings{temcamani01, + author = "F. Temcamani and P. Pouvil and O. Noblanc and C. + Brylinski and P. Bannelier and B. Darges and J. P. + Prigent", + booktitle = "Microwave Symposium Digest, 2001 IEEE MTT-S + International", + title = "Silicon carbide {MESFET}s performances and application + in broadcast power amplifiers", + year = "2001", + month = "", + volume = "", + number = "", + pages = "641--644", + doi = "10.1109/MWSYM.2001.966976", + ISSN = "", + notes = "hdtv", +} + +@Article{pensl00, + author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu + and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu + Kimoto and Hiroyuki Matsunami", + title = "Traps at the Si{C}/Si{O2}-Interface", + journal = "MRS Proc.", + volume = "640", + number = "", + pages = "", + year = "2000", + doi = "10.1557/PROC-640-H3.2", + URL = "http://dx.doi.org/10.1557/PROC-640-H3.2", +} + @Article{bhatnagar93, author = "M. Bhatnagar and B. J. Baliga", journal = "Electron Devices, IEEE Transactions on", @@ -5161,13 +5227,12 @@ publisher = "Suhrkamp", } -% Generated at www.see-out.com/sandramau/bibpat.html on on 19/09/11 03:57:45 CDT -@Misc{ATTENBERGER:2003:misc, - author = "Wilfried ATTENBERGER and Jörg LINDNER and Bernd - STRITZKER", - title = "A {METHOD} {FOR} {FORMING} {A} {LAYERED} - {SEMICONDUCTOR} {STRUCTURE} {AND} {CORRESPONDING} - {STRUCTURE}", +@Misc{attenberger03, + author = "Wilfried Attenberger and Jörg Lindner and Bernd + Stritzker", + title = "A {method} {for} {forming} {a} {layered} + {semiconductor} {structure} {and} {corresponding} + {structure}", year = "2003", month = apr, day = "24", @@ -5175,7 +5240,6 @@ version = "A3R4", howpublished = "Patent Application", nationality = "WO", - URL = "http://www.patentlens.net/patentlens/patent/WO_2003_034484_A3R4/en/", filing_num = "EP0211423", yearfiled = "2002", monthfiled = "10",