X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=a17cd642c451d0cd72bebbeb19a02023369465d1;hb=bf5f19538e8f53f5385c561ebf723eb5014e8264;hp=675792aef14eb87be08d1abe88f13386b1f2d28c;hpb=18a141dd3cd447b6153949e031622271e6c4de17;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 675792a..a17cd64 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -605,6 +605,56 @@ NETHERLANDS", } +@Article{lindner99, + title = "Controlling the density distribution of Si{C} + nanocrystals for the ion beam synthesis of buried Si{C} + layers in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "147", + number = "1-4", + pages = "249--255", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00598-9", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169", + author = "J. K. N. Lindner and B. Stritzker", + notes = "two-step implantation process", +} + +@Article{lindner99_2, + title = "Mechanisms in the ion beam synthesis of Si{C} layers + in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "148", + number = "1-4", + pages = "528--533", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00787-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", + author = "J. K. N. Lindner and B. Stritzker", +} + +@Article{lindner01, + title = "Ion beam synthesis of buried Si{C} layers in silicon: + Basic physical processes", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "178", + number = "1-4", + pages = "44--54", + year = "2001", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(01)00504-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", + author = "Jörg K. N. Lindner", +} + @Article{lindner02, title = "High-dose carbon implantations into silicon: fundamental studies for new technological tricks", @@ -923,3 +973,108 @@ URL = "http://link.aip.org/link/?APL/56/1353/1", doi = "10.1063/1.102512", } + +@Article{fissel95, + title = "Epitaxial growth of Si{C} thin films on Si-stabilized + [alpha]-Si{C}(0001) at low temperatures by solid-source + molecular beam epitaxy", + journal = "Journal of Crystal Growth", + volume = "154", + number = "1-2", + pages = "72--80", + year = "1995", + notes = "solid source mbe", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)00170-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", + author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter + and W. Richter", +} + +@Article{borders71, + author = "J. A. Borders and S. T. Picraux and W. 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Celler", + collaboration = "", + title = "Formation of buried layers of beta-Si{C} using ion + beam synthesis and incoherent lamp annealing", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "51", + number = "26", + pages = "2242--2244", + keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION + IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS", + URL = "http://link.aip.org/link/?APL/51/2242/1", + doi = "10.1063/1.98953", + notes = "nice tem images, sic by ibs", +} + +@Article{scace59, + author = "R. I. Scace and G. A. Slack", + collaboration = "", + title = "Solubility of Carbon in Silicon and Germanium", + publisher = "AIP", + year = "1959", + journal = "The Journal of Chemical Physics", + volume = "30", + number = "6", + pages = "1551--1555", + URL = "http://link.aip.org/link/?JCP/30/1551/1", + doi = "10.1063/1.1730236", + notes = "solubility of c in c-si", +} + +@Article{cowern96, + author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and + F. W. Saris and W. Vandervorst", + collaboration = "", + title = "Role of {C} and {B} clusters in transient diffusion of + {B} in silicon", + publisher = "AIP", + year = "1996", + journal = "Applied Physics Letters", + volume = "68", + number = "8", + pages = "1150--1152", + keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING; + DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS; + SILICON", + URL = "http://link.aip.org/link/?APL/68/1150/1", + doi = "10.1063/1.115706", + notes = "suppression of transient enhanced diffusion (ted)", +} + +@Article{stolk95, + title = "Implantation and transient boron diffusion: the role + of the silicon self-interstitial", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "96", + number = "1-2", + pages = "187--195", + year = "1995", + note = "Selected Papers of the Tenth International Conference + on Ion Implantation Technology (IIT '94)", + ISSN = "0168-583X", + doi = "DOI: 10.1016/0168-583X(94)00481-1", + URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c", + author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham + and J. M. Poate", +}