X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=b28085e8ca3f847e169254fca2de8c859924bc06;hb=8dec9cad6d6f846d48fc9a9f6befa3ce66af404d;hp=40948ff308d98f0705e0fb32859dc870474f215c;hpb=0b1a742b3bc099091302913f9b6898ea6b1666aa;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 40948ff..b28085e 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1084,6 +1084,27 @@
   doi =          "10.1063/1.102512",
 }
 
+@Article{yuan95,
+  author =       "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
+                 Thokala and M. J. Loboda",
+  collaboration = "",
+  title =        "Reduced temperature growth of crystalline 3{C}-Si{C}
+                 films on 6{H}-Si{C} by chemical vapor deposition from
+                 silacyclobutane",
+  publisher =    "AIP",
+  year =         "1995",
+  journal =      "Journal of Applied Physics",
+  volume =       "78",
+  number =       "2",
+  pages =        "1271--1273",
+  keywords =     "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
+                 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
+                 SPECTROPHOTOMETRY",
+  URL =          "http://link.aip.org/link/?JAP/78/1271/1",
+  doi =          "10.1063/1.360368",
+  notes =        "3c-sic on 6h-sic, cvd, reduced temperature",
+}
+
 @Article{fissel95,
   title =        "Epitaxial growth of Si{C} thin films on Si-stabilized
                  [alpha]-Si{C}(0001) at low temperatures by solid-source
@@ -1365,7 +1386,7 @@
   notes =        "charge transport in strained si",
 }
 
-@Article{PhysRevB.69.155214,
+@Article{kapur04,
   title =        "Carbon-mediated aggregation of self-interstitials in
                  silicon: {A} large-scale molecular dynamics study",
   author =       "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
@@ -1605,3 +1626,42 @@
   notes =        "explanation of sgmd and hyper md, applied to amorphous
                  silicon",
 }
+
+@Article{taylor93,
+  author =       "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
+  collaboration = "",
+  title =        "Carbon precipitation in silicon: Why is it so
+                 difficult?",
+  publisher =    "AIP",
+  year =         "1993",
+  journal =      "Applied Physics Letters",
+  volume =       "62",
+  number =       "25",
+  pages =        "3336--3338",
+  keywords =     "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
+                 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
+                 ENERGY",
+  URL =          "http://link.aip.org/link/?APL/62/3336/1",
+  doi =          "10.1063/1.109063",
+  notes =        "interfacial energy of cubic sic and si",
+}
+
+@Article{chaussende08,
+  title =        "Prospects for 3{C}-Si{C} bulk crystal growth",
+  journal =      "Journal of Crystal Growth",
+  volume =       "310",
+  number =       "5",
+  pages =        "976--981",
+  year =         "2008",
+  note =         "Proceedings of the E-MRS Conference, Symposium G -
+                 Substrates of Wide Bandgap Materials",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/j.jcrysgro.2007.11.140",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
+  author =       "D. Chaussende and F. Mercier and A. Boulle and F.
+                 Conchon and M. Soueidan and G. Ferro and A. Mantzari
+                 and A. Andreadou and E. K. Polychroniadis and C.
+                 Balloud and S. Juillaguet and J. Camassel and M. Pons",
+  notes =        "3c-sic crystal growth, sic fabrication + links,
+                 metastable",
+}