X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=b467de39042f34f1d6595989fba9e4d291dac5bc;hb=5abc703d940e4c8a2bdf224ec346a5e5eaae9dfb;hp=57e4e5304b57415ac90bba8080f27e76b360a7c2;hpb=bc2f9b6873ec7ab9437b0a942961576d063615dd;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 57e4e53..b467de3 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -495,6 +495,24 @@
                  silicon",
 }
 
+@Article{hobler05,
+  title =        "Ab initio calculations of the interaction between
+                 native point defects in silicon",
+  journal =      "Materials Science and Engineering: B",
+  volume =       "124-125",
+  number =       "",
+  pages =        "368--371",
+  year =         "2005",
+  note =         "EMRS 2005, Symposium D - Materials Science and Device
+                 Issues for Future Technologies",
+  ISSN =         "0921-5107",
+  doi =          "DOI: 10.1016/j.mseb.2005.08.072",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
+  author =       "G. Hobler and G. Kresse",
+  notes =        "vasp intrinsic si defect interaction study, capture
+                 radius",
+}
+
 @Article{ma10,
   title =        "Ab initio study of self-diffusion in silicon over a
                  wide temperature range: Point defect states and
@@ -690,6 +708,26 @@
   notes =        "carbon pairs in si",
 }
 
+@Article{liu02,
+  author =       "Chun-Li Liu and Wolfgang Windl and Len Borucki and
+                 Shifeng Lu and Xiang-Yang Liu",
+  collaboration = "",
+  title =        "Ab initio modeling and experimental study of {C}--{B}
+                 interactions in Si",
+  publisher =    "AIP",
+  year =         "2002",
+  journal =      "Applied Physics Letters",
+  volume =       "80",
+  number =       "1",
+  pages =        "52--54",
+  keywords =     "silicon; boron; carbon; elemental semiconductors;
+                 impurity-defect interactions; ab initio calculations;
+                 secondary ion mass spectra; diffusion; interstitials",
+  URL =          "http://link.aip.org/link/?APL/80/52/1",
+  doi =          "10.1063/1.1430505",
+  notes =        "c-c 100 split, lower as a and b states of capaz",
+}
+
 @Article{dal_pino93,
   title =        "Ab initio investigation of carbon-related defects in
                  silicon",
@@ -899,25 +937,31 @@
   volume =       "",
   number =       "",
   pages =        "675--678",
-  keywords =     "beta;-SiC precipitates;30 s;700 to 1300 C;C
-                 atom/radiation induced defect interaction;C depth
-                 distribution;C precipitation;C-Si defects;C-Si
-                 dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
-                 energy ion implantation;ion implantation;metastable
-                 agglomerates;microdefects;positron annihilation
-                 spectroscopy;rapid thermal annealing;secondary ion mass
-                 spectrometry;vacancy clusters;buried
-                 layers;carbon;elemental semiconductors;impurity-defect
-                 interactions;ion implantation;positron
-                 annihilation;precipitation;rapid thermal
-                 annealing;secondary ion mass
-                 spectra;silicon;transmission electron
-                 microscopy;vacancies (crystal);",
   doi =          "10.1109/IIT.1996.586497",
   ISSN =         "",
   notes =        "c-si agglomerates dumbbells",
 }
 
+@Article{werner98,
+  author =       "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
+                 D. C. Jacobson",
+  collaboration = "",
+  title =        "Carbon diffusion in silicon",
+  publisher =    "AIP",
+  year =         "1998",
+  journal =      "Applied Physics Letters",
+  volume =       "73",
+  number =       "17",
+  pages =        "2465--2467",
+  keywords =     "silicon; carbon; elemental semiconductors; diffusion;
+                 secondary ion mass spectra; semiconductor epitaxial
+                 layers; annealing; impurity-defect interactions;
+                 impurity distribution",
+  URL =          "http://link.aip.org/link/?APL/73/2465/1",
+  doi =          "10.1063/1.122483",
+  notes =        "c diffusion in si, kick out mechnism",
+}
+
 @Article{strane94,
   author =       "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
                  Picraux and J. K. Watanabe and J. W. Mayer",
@@ -1147,6 +1191,25 @@
   notes =        "ibs, burried sic layers",
 }
 
+@Article{lindner06,
+  title =        "On the balance between ion beam induced nanoparticle
+                 formation and displacive precipitate resolution in the
+                 {C}-Si system",
+  journal =      "Materials Science and Engineering: C",
+  volume =       "26",
+  number =       "5-7",
+  pages =        "857--861",
+  year =         "2006",
+  note =         "Current Trends in Nanoscience - from Materials to
+                 Applications",
+  ISSN =         "0928-4931",
+  doi =          "DOI: 10.1016/j.msec.2005.09.099",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
+  author =       "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
+                 and B. Stritzker",
+  notes =        "c int diffusion barrier",
+}
+
 @Article{ito04,
   title =        "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
                  application in buffer layer for Ga{N} epitaxial