X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=c55a0e126b55121ae014c7b6f3277c4987d33552;hb=9a540409168f421fb8eee3861a1fe8d6e3a28b38;hp=9dc4186396ac2b2de87a53c726d9998bfb40bfbf;hpb=d7bf110b5628464671a09b2c971cbb85a90a3cd1;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 9dc4186..c55a0e1 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1171,7 +1171,7 @@ keywords = "Molecular dynamics simulations", } -@Article{zirkelbach10a, +@Article{zirkelbach10, title = "Defects in carbon implanted silicon calculated by classical potentials and first-principles methods", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. @@ -1187,29 +1187,97 @@ publisher = "American Physical Society", } -@Article{zirkelbach10b, +@Article{zirkelbach11a, title = "First principles study of defects in carbon implanted silicon", journal = "to be published", volume = "", number = "", pages = "", - year = "2010", - author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. - K. N. Lindner and W. G. Schmidt and E. Rauls", + year = "2011", + author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner + and W. G. Schmidt and E. Rauls", } -@Article{zirkelbach10c, +@Article{zirkelbach11b, title = "...", journal = "to be published", volume = "", number = "", pages = "", - year = "2010", + year = "2011", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. K. N. Lindner and W. G. Schmidt and E. Rauls", } +@Article{lindner95, + author = "J. K. N. Lindner and A. Frohnwieser and B. + Rauschenbach and B. Stritzker", + title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} + Layers in Silicon", + journal = "MRS Online Proceedings Library", + volume = "354", + number = "", + pages = "171", + year = "1994", + doi = "10.1557/PROC-354-171", + URL = "http://dx.doi.org/10.1557/PROC-354-171", + eprint = "http://journals.cambridge.org/article_S1946427400420853", + notes = "first time ibs at moderate temperatures", +} + +@Article{lindner96, + title = "Formation of buried epitaxial silicon carbide layers + in silicon by ion beam synthesis", + journal = "Materials Chemistry and Physics", + volume = "46", + number = "2-3", + pages = "147--155", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/S0254-0584(97)80008-9", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7", + author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B. + Götz and A. Frohnwieser and B. Rauschenbach and B. + Stritzker", + notes = "dose window", +} + +@Article{calcagno96, + title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by + ion implantation", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "120", + number = "1-4", + pages = "121--124", + year = "1996", + note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on + New Trends in Ion Beam Processing of Materials", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(96)00492-2", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d", + author = "L. Calcagno and G. Compagnini and G. Foti and M. G. + Grimaldi and P. Musumeci", + notes = "dose window, graphitic bonds", +} + +@Article{lindner98, + title = "Mechanisms of Si{C} Formation in the Ion Beam + Synthesis of 3{C}-Si{C} Layers in Silicon", + journal = "Materials Science Forum", + volume = "264-268", + pages = "215--218", + year = "1998", + note = "", + doi = "10.4028/www.scientific.net/MSF.264-268.215", + URL = "http://www.scientific.net/MSF.264-268.215", + author = "J. K. N. Lindner and W. Reiber and B. Stritzker", + notes = "intermediate temperature for sharp interface + good + crystallinity", +} + @Article{lindner99, title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} @@ -2943,7 +3011,7 @@ Ion `Hot' Implantation", author = "Masahiro Deguchi and Makoto Kitabatake and Takashi Hirao and Naoki Arai and Tomio Izumi", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "31", number = "Part 1, No. 2A", pages = "343--347", @@ -3299,7 +3367,8 @@ pages = "S2643", URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004", year = "2004", - notes = "ab inito init, vibrational modes, c defect in si", + notes = "ab inito dft intro, vibrational modes, c defect in + si", } @Article{park02, @@ -4056,3 +4125,42 @@ URL = "http://dx.doi.org/10.1557/PROC-59-419", eprint = "http://journals.cambridge.org/article_S1946427400543681", } + +@Article{puska98, + title = "Convergence of supercell calculations for point + defects in semiconductors: Vacancy in silicon", + author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R. + M. Nieminen", + journal = "Phys. Rev. B", + volume = "58", + number = "3", + pages = "1318--1325", + numpages = "7", + year = "1998", + month = jul, + doi = "10.1103/PhysRevB.58.1318", + publisher = "American Physical Society", + notes = "convergence k point supercell size, vacancy in + silicon", +} + +@Article{serre95, + author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A. + Romano-Rodr\'{\i}guez and J. R. Morante and R. + K{\"{o}}gler and W. Skorupa", + collaboration = "", + title = "Spectroscopic characterization of phases formed by + high-dose carbon ion implantation in silicon", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "77", + number = "7", + pages = "2978--2984", + keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS; + FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA; + PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE + DEPENDENCE; PRECIPITATES; ANNEALING", + URL = "http://link.aip.org/link/?JAP/77/2978/1", + doi = "10.1063/1.358714", +}