X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=c5f22cf20cd657a3b9ba504bf39a7bb8031ec405;hb=5db0282ba98962b46ce7afc76f5e252e57efcf68;hp=1d44eb2a43ef82ce05d4dd078e348898e0e25332;hpb=a0798487dcdcfa5bcb019a03daa57c8afc298edc;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 1d44eb2..c5f22cf 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -369,6 +369,40 @@ notes = "si self interstitial, tbmd, virial stress", } +@Article{al-mushadani03, + title = "Free-energy calculations of intrinsic point defects in + silicon", + author = "O. K. Al-Mushadani and R. J. Needs", + journal = "Phys. Rev. B", + volume = "68", + number = "23", + pages = "235205", + numpages = "8", + year = "2003", + month = dec, + doi = "10.1103/PhysRevB.68.235205", + publisher = "American Physical Society", + notes = "formation energies of intrinisc point defects in + silicon, si self interstitials", +} + +@Article{ma10, + title = "Ab initio study of self-diffusion in silicon over a + wide temperature range: Point defect states and + migration mechanisms", + author = "Shangyi Ma and Shaoqing Wang", + journal = "Phys. Rev. B", + volume = "81", + number = "19", + pages = "193203", + numpages = "4", + year = "2010", + month = may, + doi = "10.1103/PhysRevB.81.193203", + publisher = "American Physical Society", + notes = "si self interstitial diffusion + refs", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", @@ -946,9 +980,9 @@ pages = "15150--15159", numpages = "9", year = "1995", - month = dec, doi = "10.1103/PhysRevB.52.15150", - notes = "modified tersoff, scale cutoff with volume", + notes = "modified tersoff, scale cutoff with volume, promising + tersoff reparametrization", publisher = "American Physical Society", } @@ -1027,6 +1061,43 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{nishino83, + author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. + Will", + collaboration = "", + title = "Production of large-area single-crystal wafers of + cubic Si{C} for semiconductor devices", + publisher = "AIP", + year = "1983", + journal = "Applied Physics Letters", + volume = "42", + number = "5", + pages = "460--462", + keywords = "silicon carbides; layers; chemical vapor deposition; + monocrystals", + URL = "http://link.aip.org/link/?APL/42/460/1", + doi = "10.1063/1.93970", + notes = "cvd of 3c-sic on si, sic buffer layer", +} + +@Article{nishino:4889, + author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono + and Hiroyuki Matsunami", + collaboration = "", + title = "Epitaxial growth and electric characteristics of cubic + Si{C} on silicon", + publisher = "AIP", + year = "1987", + journal = "Journal of Applied Physics", + volume = "61", + number = "10", + pages = "4889--4893", + URL = "http://link.aip.org/link/?JAP/61/4889/1", + doi = "10.1063/1.338355", + notes = "cvd of 3c-sic on si, sic buffer layer, first time + carbonization", +} + @Article{powell87, author = "J. Anthony Powell and Lawrence G. Matus and Maria A. Kuczmarski", @@ -1061,6 +1132,7 @@ VAPOR DEPOSITION", URL = "http://link.aip.org/link/?JAP/73/726/1", doi = "10.1063/1.353329", + notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } @Article{powell90, @@ -1082,6 +1154,28 @@ PHASE EPITAXY", URL = "http://link.aip.org/link/?APL/56/1353/1", doi = "10.1063/1.102512", + notes = "cvd of 3c-sic on 6h-sic", +} + +@Article{yuan95, + author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. + Thokala and M. J. Loboda", + collaboration = "", + title = "Reduced temperature growth of crystalline 3{C}-Si{C} + films on 6{H}-Si{C} by chemical vapor deposition from + silacyclobutane", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "2", + pages = "1271--1273", + keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION + EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD; + SPECTROPHOTOMETRY", + URL = "http://link.aip.org/link/?JAP/78/1271/1", + doi = "10.1063/1.360368", + notes = "3c-sic on 6h-sic, cvd, reduced temperature", } @Article{fissel95, @@ -1365,7 +1459,7 @@ notes = "charge transport in strained si", } -@Article{PhysRevB.69.155214, +@Article{kapur04, title = "Carbon-mediated aggregation of self-interstitials in silicon: {A} large-scale molecular dynamics study", author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", @@ -1381,22 +1475,6 @@ notes = "simulation using promising tersoff reparametrization", } -@Article{tang95, - title = "Atomistic simulation of thermomechanical properties of - \beta{}-Si{C}", - author = "Meijie Tang and Sidney Yip", - journal = "Phys. Rev. B", - volume = "52", - number = "21", - pages = "15150--15159", - numpages = "9", - year = "1995", - month = dec, - doi = "10.1103/PhysRevB.52.15150", - publisher = "American Physical Society", - notes = "promising tersoff reparametrization", -} - @Article{barkema96, title = "Event-Based Relaxation of Continuous Disordered Systems", @@ -1621,3 +1699,189 @@ notes = "explanation of sgmd and hyper md, applied to amorphous silicon", } + +@Article{taylor93, + author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele", + collaboration = "", + title = "Carbon precipitation in silicon: Why is it so + difficult?", + publisher = "AIP", + year = "1993", + journal = "Applied Physics Letters", + volume = "62", + number = "25", + pages = "3336--3338", + keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED + MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE + ENERGY", + URL = "http://link.aip.org/link/?APL/62/3336/1", + doi = "10.1063/1.109063", + notes = "interfacial energy of cubic sic and si", +} + +@Article{chaussende08, + title = "Prospects for 3{C}-Si{C} bulk crystal growth", + journal = "Journal of Crystal Growth", + volume = "310", + number = "5", + pages = "976--981", + year = "2008", + note = "Proceedings of the E-MRS Conference, Symposium G - + Substrates of Wide Bandgap Materials", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2007.11.140", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082", + author = "D. Chaussende and F. Mercier and A. Boulle and F. + Conchon and M. Soueidan and G. Ferro and A. Mantzari + and A. Andreadou and E. K. Polychroniadis and C. + Balloud and S. Juillaguet and J. Camassel and M. Pons", + notes = "3c-sic crystal growth, sic fabrication + links, + metastable", +} + +@Article{feynman39, + title = "Forces in Molecules", + author = "R. P. Feynman", + journal = "Phys. Rev.", + volume = "56", + number = "4", + pages = "340--343", + numpages = "3", + year = "1939", + month = aug, + doi = "10.1103/PhysRev.56.340", + publisher = "American Physical Society", + notes = "hellmann feynman forces", +} + +@Article{buczko00, + title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and + $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of + their Contrasting Properties", + author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates + T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "84", + number = "5", + pages = "943--946", + numpages = "3", + year = "2000", + month = jan, + doi = "10.1103/PhysRevLett.84.943", + publisher = "American Physical Society", + notes = "si sio2 and sic sio2 interface", +} + +@Article{djurabekova08, + title = "Atomistic simulation of the interface structure of Si + nanocrystals embedded in amorphous silica", + author = "Flyura Djurabekova and Kai Nordlund", + journal = "Phys. Rev. B", + volume = "77", + number = "11", + pages = "115325", + numpages = "7", + year = "2008", + month = mar, + doi = "10.1103/PhysRevB.77.115325", + publisher = "American Physical Society", + notes = "nc-si in sio2, interface energy, nc construction, + angular distribution, coordination", +} + +@Article{wen:073522, + author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J. + W. Liang and J. Zou", + collaboration = "", + title = "Nature of interfacial defects and their roles in + strain relaxation at highly lattice mismatched + 3{C}-Si{C}/Si (001) interface", + publisher = "AIP", + year = "2009", + journal = "Journal of Applied Physics", + volume = "106", + number = "7", + eid = "073522", + numpages = "8", + pages = "073522", + keywords = "anelastic relaxation; crystal structure; dislocations; + elemental semiconductors; semiconductor growth; + semiconductor thin films; silicon; silicon compounds; + stacking faults; wide band gap semiconductors", + URL = "http://link.aip.org/link/?JAP/106/073522/1", + doi = "10.1063/1.3234380", + notes = "sic/si interface, follow refs, tem image + deconvolution", +} + +@Article{kitabatake93, + author = "Makoto Kitabatake and Masahiro Deguchi and Takashi + Hirao", + collaboration = "", + title = "Simulations and experiments of Si{C} heteroepitaxial + growth on Si(001) surface", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "7", + pages = "4438--4445", + keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR + BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON; + MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION", + URL = "http://link.aip.org/link/?JAP/74/4438/1", + doi = "10.1063/1.354385", + notes = "mbe and md of sic growth on si, 4 to 5 shrinkage + model, interface", +} + +@Article{pizzagalli03, + title = "Theoretical investigations of a highly mismatched + interface: Si{C}/Si(001)", + author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra + Catellani", + journal = "Phys. Rev. B", + volume = "68", + number = "19", + pages = "195302", + numpages = "10", + year = "2003", + month = nov, + doi = "10.1103/PhysRevB.68.195302", + publisher = "American Physical Society", + notes = "tersoff md and ab initio sic/si interface study", +} + +@Article{tang07, + title = "Atomic configurations of dislocation core and twin + boundaries in $ 3{C}-Si{C} $ studied by high-resolution + electron microscopy", + author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X. + H. Zheng and J. W. Liang", + journal = "Phys. Rev. B", + volume = "75", + number = "18", + pages = "184103", + numpages = "7", + year = "2007", + month = may, + doi = "10.1103/PhysRevB.75.184103", + publisher = "American Physical Society", + notes = "hrem image deconvolution on 3c-sic on si, distinguish + si and c", +} + +@Article{hornstra58, + title = "Dislocations in the diamond lattice", + journal = "Journal of Physics and Chemistry of Solids", + volume = "5", + number = "1-2", + pages = "129--141", + year = "1958", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(58)90138-0", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5", + author = "J. Hornstra", + notes = "dislocations in diamond lattice", +}