X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=c6cbfd42a3e1c0f58c1ecefedfb5d1b0cfb03ed3;hb=2e9f029839026138444ba2c037bdf78a5e1d1f54;hp=4588c0843ccb0c9cb7dc60693ef9412eea3d8256;hpb=ce62aafc76466fa8f4245b95a0cef60021558f65;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 4588c08..c6cbfd4 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -40,6 +40,22 @@
   notes = {derivation of albe bond order formalism},
 }
 
+@ARTICLE{mattoni2007,
+  author = {{Mattoni}, A. and {Ippolito}, M. and {Colombo}, L.},
+  title = "{Atomistic modeling of brittleness in covalent materials}",
+  journal = {Phys. Rev. B},
+  year = 2007,
+  month = dec,
+  volume = 76,
+  number = 22,
+  pages = {224103-+},
+  doi = {10.1103/PhysRevB.76.224103},
+  notes = {adopted tersoff potential for Si, C, Ge ad SiC;
+           longe(r)-range-interactions, brittle propagation of fracture,
+           more available potentials, universal energy relation (uer),
+           minimum range model (mrm)}
+}
+
 @Article{koster2002,
   title = {Stress relaxation in $a-Si$ induced by ion bombardment},
   author = {M. Koster, H. M. Urbassek},
@@ -85,16 +101,54 @@
   notes = {velocity verlet integration algorithm equation of motion}
 }
 
-@Article{berendsen84,
+@article{berendsen84,
+  author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren
+            and A. DiNola and J. R. Haak},
+  collaboration = {},
   title = {Molecular dynamics with coupling to an external bath},
-  author = {H. J. C. Berendsen},
+  publisher = {AIP},
   year = {1984},
-  journal = {J. Chem. Phys.},
+  journal = {The Journal of Chemical Physics},
   volume = {81},
-  pages = {3684},
+  number = {8},
+  pages = {3684-3690},
+  keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
+              COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS},
+  url = {http://link.aip.org/link/?JCP/81/3684/1},
+  doi = {10.1063/1.448118},
   notes = {berendsen thermostat barostat}
 }
 
+@article{huang95,
+  author={Hanchen Huang and N M Ghoniem and J K Wong and M Baskes},
+  title={Molecular dynamics determination of defect energetics in beta -SiC
+         using three representative empirical potentials},
+  journal={Modelling and Simulation in Materials Science and Engineering},
+  volume={3},
+  number={5},
+  pages={615-627},
+  url={http://stacks.iop.org/0965-0393/3/615},
+  notes = {comparison of tersoff, pearson and eam for defect energetics in sic;
+           (m)eam parameters for sic},
+  year={1995}
+}
+
+@Article{tersoff89,
+  title = {Relationship between the embedded-atom method and
+           Tersoff potentials},
+  author = {Brenner, Donald W.},
+  journal = {Phys. Rev. Lett.},
+  volume = {63},
+  number = {9},
+  pages = {1022},
+  numpages = {1},
+  year = {1989},
+  month = {Aug},
+  doi = {10.1103/PhysRevLett.63.1022},
+  publisher = {American Physical Society},
+  notes = {relation of tersoff and eam potential}
+}
+
 % molecular dynamics: applications
 
 @Article{batra87,
@@ -146,11 +200,50 @@
           pair correlation of amorphous sic, md result analyze}
 }
 
+@Article{devanathan98,
+  title = "Computer simulation of a 10 keV Si displacement cascade in SiC",
+  journal = "Nuclear Instruments and Methods in Physics Research Section B:
+             Beam Interactions with Materials and Atoms",
+  volume = "141",
+  number = "1-4",
+  pages = "118 - 122",
+  year = "1998",
+  note = "",
+  issn = "0168-583X",
+  doi = "DOI: 10.1016/S0168-583X(98)00084-6",
+  author = "R. Devanathan and W. J. Weber and T. Diaz de la Rubia",
+  notes = {modified tersoff short range potential, ab initio 3c-sic}
+}
+
+@Article{devanathan98_2,
+  title = "Displacement threshold energies in [beta]-SiC",
+  journal = "Journal of Nuclear Materials",
+  volume = "253",
+  number = "1-3",
+  pages = "47 - 52",
+  year = "1998",
+  issn = "0022-3115",
+  doi = "DOI: 10.1016/S0022-3115(97)00304-8",
+  author = "R. Devanathan and T. Diaz de la Rubia and W. J. Weber",
+  notes = "modified tersoff, ab initio, combined ab initio tersoff"
+}
+
+@Article{batra87,
+  title = {SiC/Si heteroepitaxial growth},
+  author = {M. Kitabatake},
+  journal = {Thin Solid Films},
+  volume = {369},
+  pages = {257--264},
+  numpages = {8},
+  year = {2000},
+  notes = {md simulation, sic si heteroepitaxy, mbe}
+}
+
 % tight binding
 
 @Article{tang97,
   title = {Intrinsic point defects in crystalline silicon:
-           Tight-binding molecular dynamics studiesof self-diffusion,
+           Tight-binding molecular dynamics studies of self-diffusion,
            interstitial-vacancy recombination, and formation volumes},
   author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
   journal = {Phys. Rev. B},
@@ -196,6 +289,21 @@
   notes = {defects in 3c-sic}
 }
 
+@Article{mattoni2002,
+  title = {Self-interstitial trapping by carbon complexes in crystalline silicon},
+  author = {Mattoni, A.  and Bernardini, F.  and Colombo, L. },
+  journal = {Phys. Rev. B},
+  volume = {66},
+  number = {19},
+  pages = {195214},
+  numpages = {6},
+  year = {2002},
+  month = {Nov},
+  doi = {10.1103/PhysRevB.66.195214},
+  publisher = {American Physical Society},
+  notes = {c in c-si, diffusion, interstitial configuration + links}
+}
+
 % ab initio
 
 @Article{leung99,
@@ -214,7 +322,7 @@
   notes = {nice images of the defects}
 }
 
-@Article{PhysRevB.50.7439,
+@Article{capazd94,
   title = {Identification of the migration path of interstitial carbon
            in silicon},
   author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
@@ -230,6 +338,56 @@
   notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
 }
 
+@Article{car84,
+  title = {Microscopic Theory of Atomic Diffusion Mechanisms in Silicon},
+  author = {Car, Roberto  and Kelly, Paul J. and Oshiyama, Atsushi
+            and Pantelides, Sokrates T.},
+  journal = {Phys. Rev. Lett.},
+  volume = {52},
+  number = {20},
+  pages = {1814--1817},
+  numpages = {3},
+  year = {1984},
+  month = {May},
+  doi = {10.1103/PhysRevLett.52.1814},
+  publisher = {American Physical Society},
+  notes = {microscopic theory diffusion silicon dft migration path formation}
+}
+
+% monte carlo md
+
+@Article{kelires97,
+  title = {Short-range order, bulk moduli,
+           and physical trends in c-$Si1-x$$Cx$ alloys },
+  author = {Kelires, P. C. },
+  journal = {Phys. Rev. B},
+  volume = {55},
+  number = {14},
+  pages = {8784--8787},
+  numpages = {3},
+  year = {1997},
+  month = {Apr},
+  doi = {10.1103/PhysRevB.55.8784},
+  publisher = {American Physical Society},
+  notes = {c strained si, montecarlo md, bulk moduli, next neighbour dist}
+}
+
+@Article{kelires95,
+  title = {Monte Carlo Studies of Ternary Semiconductor Alloys:
+           Application to the $Si1-x-yGexCy$ System},
+  author = {Kelires, P. C.},
+  journal = {Phys. Rev. Lett.},
+  volume = {75},
+  number = {6},
+  pages = {1114--1117},
+  numpages = {3},
+  year = {1995},
+  month = {Aug},
+  doi = {10.1103/PhysRevLett.75.1114},
+  publisher = {American Physical Society},
+  notes = {mc md, strain compensation in si ge by c insertion}
+}
+
 % experimental stuff - interstitials
 
 @Article{watkins76,
@@ -266,8 +424,8 @@
 @Article{strane96,
   title = {Carbon incorporation into Si at high concentrations
            by ion implantation and solid phase epitaxy},
-  author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
-            J.K. Watanabe, J. W. Mayer},
+  author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
+            J. K. Watanabe and J. W. Mayer},
   journal = {J. Appl. Phys.},
   volume = {79},
   pages = {637},
@@ -277,12 +435,62 @@
   notes = {strained silicon, carbon supersaturation}
 }
 
+@article{laveant2002,
+  title = {Epitaxy of carbon-rich silicon with MBE},
+  author = {P. Laveant, G. Gerth, P. Werner, U. Gosele},
+  journal = {Materials Science and Engineering B},
+  volume = {89},
+  number = {1-3},
+  pages = {241-245},
+  keywords = {Growth; Epitaxy; MBE; Carbon; Silicon},
+  notes = {low c in si, tensile stress to compensate compressive stress,
+           avoid sic precipitation}}
+}
+
+% sic formation mechanism
+
+@article{werner97,
+  author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
+  title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
+  publisher = {AIP},
+  year = {1997},
+  journal = {Applied Physics Letters},
+  volume = {70},
+  number = {2},
+  pages = {252-254},
+  keywords = {silicon; ion implantation; carbon; crystal defects;
+              transmission electron microscopy; annealing;
+	      positron annihilation; secondary ion mass spectroscopy;
+	      buried layers; precipitation},
+  url = {http://link.aip.org/link/?APL/70/252/1},
+  doi = {10.1063/1.118381},
+  notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
+}
+
+@article{strane94,
+  author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
+            J. K. Watanabe and J. W. Mayer},
+  collaboration = {},
+  title = {Precipitation and relaxation in strained
+           Si[sub 1 - y]C[sub y]/Si heterostructures},
+  publisher = {AIP},
+  year = {1994},
+  journal = {Journal of Applied Physics},
+  volume = {76},
+  number = {6},
+  pages = {3656-3668},
+  keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
+  url = {http://link.aip.org/link/?JAP/76/3656/1},
+  doi = {10.1063/1.357429},
+  notes = {strained si-c to 3c-sic, carbon nucleation + refs}
+}
+
 % properties sic
 
 @Article{edgar92,
   title = {Prospects for device implementation of wide band gap semiconductors},
   author = {J. H. Edgar},
-  journal = {J. Matter. Res.},
+  journal = {J. Mater. Res.},
   volume = {7},
   pages = {235},
   year = {1992},