X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=d7b604d74d037b2489b664b9bea36fededf2b199;hb=2576f7279446ee41c999edc47bab6320101bb860;hp=bd00b0f12f1f003c251ca2d8fcb8e2afb7af7cdb;hpb=5aca50e47a686f19f92f88aa7dfff05ab34175b1;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index bd00b0f..d7b604d 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,16 @@ notes = "derivation of albe bond order formalism", } +@Article{bean71, + author = "A. R. Bean and R. C. Newman", + title = "", + journal = "J. Phys. Chem. Solids", + volume = "32", + pages = "1211", + year = "1971", + notes = "experimental solubility data of carbon in silicon", +} + @Article{capano97, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", @@ -49,6 +59,17 @@ year = "1997", } +@Article{fischer90, + author = "G. R. Fisher and P. Barnes", + title = "Towards a unified view of polytypism in silicon + carbide", + journal = "Philosophical Magazine Part B", + volume = "61", + pages = "217--236", + year = "1990", + notes = "sic polytypes", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -75,6 +96,22 @@ relation (uer), minimum range model (mrm)", } +@Article{balamane92, + title = "Comparative study of silicon empirical interatomic + potentials", + author = "H. Balamane and T. Halicioglu and W. A. Tiller", + journal = "Phys. Rev. B", + volume = "46", + number = "4", + pages = "2250--2279", + numpages = "29", + year = "1992", + month = jul, + doi = "10.1103/PhysRevB.46.2250", + publisher = "American Physical Society", + notes = "comparison of classical potentials for si", +} + @Article{koster2002, title = "Stress relaxation in $a-Si$ induced by ion bombardment", @@ -107,6 +144,16 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{moissan04, + author = "Henri Moissan", + title = "Nouvelles recherches sur la météorité de Cañon + Diablo", + journal = "Comptes rendus de l'Académie des Sciences", + volume = "139", + pages = "773--786", + year = "1904", +} + @Book{park98, author = "Y. S. Park", title = "Si{C} Materials and Devices", @@ -177,7 +224,7 @@ year = "1995", } -@Article{tersoff89, +@Article{brenner89, title = "Relationship between the embedded-atom method and Tersoff potentials", author = "Donald W. Brenner", @@ -322,6 +369,40 @@ notes = "si self interstitial, tbmd, virial stress", } +@Article{al-mushadani03, + title = "Free-energy calculations of intrinsic point defects in + silicon", + author = "O. K. Al-Mushadani and R. J. Needs", + journal = "Phys. Rev. B", + volume = "68", + number = "23", + pages = "235205", + numpages = "8", + year = "2003", + month = dec, + doi = "10.1103/PhysRevB.68.235205", + publisher = "American Physical Society", + notes = "formation energies of intrinisc point defects in + silicon, si self interstitials", +} + +@Article{ma10, + title = "Ab initio study of self-diffusion in silicon over a + wide temperature range: Point defect states and + migration mechanisms", + author = "Shangyi Ma and Shaoqing Wang", + journal = "Phys. Rev. B", + volume = "81", + number = "19", + pages = "193203", + numpages = "4", + year = "2010", + month = may, + doi = "10.1103/PhysRevB.81.193203", + publisher = "American Physical Society", + notes = "si self interstitial diffusion + refs", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", @@ -353,7 +434,8 @@ doi = "10.1103/PhysRevB.66.195214", publisher = "American Physical Society", notes = "c in c-si, diffusion, interstitial configuration + - links", + links, interaction of carbon and silicon + interstitials", } @Article{leung99, @@ -369,13 +451,14 @@ month = sep, doi = "10.1103/PhysRevLett.83.2351", publisher = "American Physical Society", - notes = "nice images of the defects", + notes = "nice images of the defects, si defect overview + + refs", } -@Article{capazd94, +@Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos", + author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -389,6 +472,23 @@ dumbbell", } +@Article{dal_pino93, + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. Dal Pino and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", +} + @Article{car84, title = "Microscopic Theory of Atomic Diffusion Mechanisms in Silicon", @@ -440,6 +540,21 @@ notes = "mc md, strain compensation in si ge by c insertion", } +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Communications", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -470,6 +585,21 @@ month = sep, doi = "10.1103/PhysRevB.42.5759", publisher = "American Physical Society", + notes = "carbon diffusion in silicon", +} + +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semiconductor Science and Technology", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", } @Article{strane96, @@ -520,6 +650,37 @@ precipitate", } +@InProceedings{werner96, + author = "P. Werner and R. Koegler and W. Skorupa and D. + Eichler", + booktitle = "Ion Implantation Technology. Proceedings of the 11th + International Conference on", + title = "{TEM} investigation of {C}-Si defects in carbon + implanted silicon", + year = "1996", + month = jun, + volume = "", + number = "", + pages = "675--678", + keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C + atom/radiation induced defect interaction;C depth + distribution;C precipitation;C-Si defects;C-Si + dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high + energy ion implantation;ion implantation;metastable + agglomerates;microdefects;positron annihilation + spectroscopy;rapid thermal annealing;secondary ion mass + spectrometry;vacancy clusters;buried + layers;carbon;elemental semiconductors;impurity-defect + interactions;ion implantation;positron + annihilation;precipitation;rapid thermal + annealing;secondary ion mass + spectra;silicon;transmission electron + microscopy;vacancies (crystal);", + doi = "10.1109/IIT.1996.586497", + ISSN = "", + notes = "c-si agglomerates dumbbells", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -632,11 +793,11 @@ number = "1-4", pages = "528--533", year = "1999", - note = "", ISSN = "0168-583X", doi = "DOI: 10.1016/S0168-583X(98)00787-3", URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", author = "J. K. N. Lindner and B. Stritzker", + notes = "3c-sic precipitation model, c-si dimers (dumbbells)", } @Article{lindner01, @@ -667,6 +828,24 @@ notes = "ibs, burried sic layers", } +@Article{ito04, + title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its + application in buffer layer for Ga{N} epitaxial + growth", + journal = "Applied Surface Science", + volume = "238", + number = "1-4", + pages = "159--164", + year = "2004", + note = "APHYS'03 Special Issue", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2004.05.199", + URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c", + author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase + and S. Nishio and K. Yasuda and Y. Ishigami", + notes = "gan on 3c-sic", +} + @Article{alder57, author = "B. J. Alder and T. E. Wainwright", title = "Phase Transition for a Hard Sphere System", @@ -768,6 +947,20 @@ publisher = "American Physical Society", } +@Article{tersoff90, + title = "Carbon defects and defect reactions in silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "64", + number = "15", + pages = "1757--1760", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevLett.64.1757", + publisher = "American Physical Society", +} + @Article{fahey89, title = "Point defects and dopant diffusion in silicon", author = "P. M. Fahey and P. B. Griffin and J. D. Plummer", @@ -836,9 +1029,9 @@ pages = "15150--15159", numpages = "9", year = "1995", - month = dec, doi = "10.1103/PhysRevB.52.15150", - notes = "modified tersoff, scale cutoff with volume", + notes = "modified tersoff, scale cutoff with volume, promising + tersoff reparametrization", publisher = "American Physical Society", } @@ -917,6 +1110,43 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{nishino83, + author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. + Will", + collaboration = "", + title = "Production of large-area single-crystal wafers of + cubic Si{C} for semiconductor devices", + publisher = "AIP", + year = "1983", + journal = "Applied Physics Letters", + volume = "42", + number = "5", + pages = "460--462", + keywords = "silicon carbides; layers; chemical vapor deposition; + monocrystals", + URL = "http://link.aip.org/link/?APL/42/460/1", + doi = "10.1063/1.93970", + notes = "cvd of 3c-sic on si, sic buffer layer", +} + +@Article{nishino87, + author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono + and Hiroyuki Matsunami", + collaboration = "", + title = "Epitaxial growth and electric characteristics of cubic + Si{C} on silicon", + publisher = "AIP", + year = "1987", + journal = "Journal of Applied Physics", + volume = "61", + number = "10", + pages = "4889--4893", + URL = "http://link.aip.org/link/?JAP/61/4889/1", + doi = "10.1063/1.338355", + notes = "cvd of 3c-sic on si, sic buffer layer, first time + carbonization", +} + @Article{powell87, author = "J. Anthony Powell and Lawrence G. Matus and Maria A. Kuczmarski", @@ -951,6 +1181,7 @@ VAPOR DEPOSITION", URL = "http://link.aip.org/link/?JAP/73/726/1", doi = "10.1063/1.353329", + notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } @Article{powell90, @@ -972,6 +1203,28 @@ PHASE EPITAXY", URL = "http://link.aip.org/link/?APL/56/1353/1", doi = "10.1063/1.102512", + notes = "cvd of 3c-sic on 6h-sic", +} + +@Article{yuan95, + author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. + Thokala and M. J. Loboda", + collaboration = "", + title = "Reduced temperature growth of crystalline 3{C}-Si{C} + films on 6{H}-Si{C} by chemical vapor deposition from + silacyclobutane", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "2", + pages = "1271--1273", + keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION + EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD; + SPECTROPHOTOMETRY", + URL = "http://link.aip.org/link/?JAP/78/1271/1", + doi = "10.1063/1.360368", + notes = "3c-sic on 6h-sic, cvd, reduced temperature", } @Article{fissel95, @@ -983,12 +1236,30 @@ number = "1-2", pages = "72--80", year = "1995", - notes = "solid source mbe", ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(95)00170-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter and W. Richter", + notes = "solid source mbe of 3c-sic on si and 6h-sic", +} + +@Article{fissel95_apl, + author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter", + collaboration = "", + title = "Low-temperature growth of Si{C} thin films on Si and + 6{H}--Si{C} by solid-source molecular beam epitaxy", + publisher = "AIP", + year = "1995", + journal = "Applied Physics Letters", + volume = "66", + number = "23", + pages = "3182--3184", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; + RHEED; NUCLEATION", + URL = "http://link.aip.org/link/?APL/66/3182/1", + doi = "10.1063/1.113716", + notes = "mbe 3c-sic on si and 6h-sic", } @Article{borders71, @@ -1003,8 +1274,9 @@ number = "11", pages = "509--511", URL = "http://link.aip.org/link/?APL/18/509/1", - notes = "first time sic by ibs", doi = "10.1063/1.1653516", + notes = "first time sic by ibs, follow cites for precipitation + ideas", } @Article{reeson87, @@ -1079,6 +1351,25 @@ and J. M. Poate", } +@Article{stolk97, + author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and + D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and + M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T. + E. Haynes", + collaboration = "", + title = "Physical mechanisms of transient enhanced dopant + diffusion in ion-implanted silicon", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "81", + number = "9", + pages = "6031--6050", + URL = "http://link.aip.org/link/?JAP/81/6031/1", + doi = "10.1063/1.364452", + notes = "ted, transient enhanced diffusion, c silicon trap", +} + @Article{powell94, author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", collaboration = "", @@ -1235,3 +1526,554 @@ doi = "10.1063/1.366364", notes = "charge transport in strained si", } + +@Article{kapur04, + title = "Carbon-mediated aggregation of self-interstitials in + silicon: {A} large-scale molecular dynamics study", + author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", + journal = "Phys. Rev. B", + volume = "69", + number = "15", + pages = "155214", + numpages = "8", + year = "2004", + month = apr, + doi = "10.1103/PhysRevB.69.155214", + publisher = "American Physical Society", + notes = "simulation using promising tersoff reparametrization", +} + +@Article{barkema96, + title = "Event-Based Relaxation of Continuous Disordered + Systems", + author = "G. T. Barkema and Normand Mousseau", + journal = "Phys. Rev. Lett.", + volume = "77", + number = "21", + pages = "4358--4361", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4358", + publisher = "American Physical Society", + notes = "activation relaxation technique, art, speed up slow + dynamic mds", +} + +@Article{cances09, + author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K. + Minoukadeh and F. Willaime", + collaboration = "", + title = "Some improvements of the activation-relaxation + technique method for finding transition pathways on + potential energy surfaces", + publisher = "AIP", + year = "2009", + journal = "The Journal of Chemical Physics", + volume = "130", + number = "11", + eid = "114711", + numpages = "6", + pages = "114711", + keywords = "eigenvalues and eigenfunctions; iron; potential energy + surfaces; vacancies (crystal)", + URL = "http://link.aip.org/link/?JCP/130/114711/1", + doi = "10.1063/1.3088532", + notes = "improvements to art, refs for methods to find + transition pathways", +} + +@Article{parrinello81, + author = "M. Parrinello and A. Rahman", + collaboration = "", + title = "Polymorphic transitions in single crystals: {A} new + molecular dynamics method", + publisher = "AIP", + year = "1981", + journal = "Journal of Applied Physics", + volume = "52", + number = "12", + pages = "7182--7190", + keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL + MODELS; DYNAMICS; THEORETICAL DATA; STRESSES; + CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL; + COMPRESSION; TENSILE PROPERTIES; COMPARATIVE + EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES; + IMPACT SHOCK", + URL = "http://link.aip.org/link/?JAP/52/7182/1", + doi = "10.1063/1.328693", +} + +@Article{stillinger85, + title = "Computer simulation of local order in condensed phases + of silicon", + author = "Frank H. Stillinger and Thomas A. Weber", + journal = "Phys. Rev. B", + volume = "31", + number = "8", + pages = "5262--5271", + numpages = "9", + year = "1985", + month = apr, + doi = "10.1103/PhysRevB.31.5262", + publisher = "American Physical Society", +} + +@Article{brenner90, + title = "Empirical potential for hydrocarbons for use in + simulating the chemical vapor deposition of diamond + films", + author = "Donald W. Brenner", + journal = "Phys. Rev. B", + volume = "42", + number = "15", + pages = "9458--9471", + numpages = "13", + year = "1990", + month = nov, + doi = "10.1103/PhysRevB.42.9458", + publisher = "American Physical Society", + notes = "brenner hydro carbons", +} + +@Article{bazant96, + title = "Modeling of Covalent Bonding in Solids by Inversion of + Cohesive Energy Curves", + author = "Martin Z. Bazant and Efthimios Kaxiras", + journal = "Phys. Rev. Lett.", + volume = "77", + number = "21", + pages = "4370--4373", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4370", + publisher = "American Physical Society", + notes = "first si edip", +} + +@Article{bazant97, + title = "Environment-dependent interatomic potential for bulk + silicon", + author = "Martin Z. Bazant and Efthimios Kaxiras and J. F. + Justo", + journal = "Phys. Rev. B", + volume = "56", + number = "14", + pages = "8542--8552", + numpages = "10", + year = "1997", + month = oct, + doi = "10.1103/PhysRevB.56.8542", + publisher = "American Physical Society", + notes = "second si edip", +} + +@Article{justo98, + title = "Interatomic potential for silicon defects and + disordered phases", + author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios + Kaxiras and V. V. Bulatov and Sidney Yip", + journal = "Phys. Rev. B", + volume = "58", + number = "5", + pages = "2539--2550", + numpages = "11", + year = "1998", + month = aug, + doi = "10.1103/PhysRevB.58.2539", + publisher = "American Physical Society", + notes = "latest si edip, good dislocation explanation", +} + +@Article{parcas_md, + title = "{PARCAS} molecular dynamics code", + author = "K. Nordlund", + year = "2008", +} + +@Article{voter97, + title = "Hyperdynamics: Accelerated Molecular Dynamics of + Infrequent Events", + author = "Arthur F. Voter", + journal = "Phys. Rev. Lett.", + volume = "78", + number = "20", + pages = "3908--3911", + numpages = "3", + year = "1997", + month = may, + doi = "10.1103/PhysRevLett.78.3908", + publisher = "American Physical Society", + notes = "hyperdynamics, accelerated md", +} + +@Article{voter97_2, + author = "Arthur F. Voter", + collaboration = "", + title = "A method for accelerating the molecular dynamics + simulation of infrequent events", + publisher = "AIP", + year = "1997", + journal = "The Journal of Chemical Physics", + volume = "106", + number = "11", + pages = "4665--4677", + keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM + TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY; + SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential + energy functions; surface diffusion; reaction kinetics + theory; potential energy surfaces", + URL = "http://link.aip.org/link/?JCP/106/4665/1", + doi = "10.1063/1.473503", + notes = "improved hyperdynamics md", +} + +@Article{sorensen2000, + author = "Mads R. S\o rensen and Arthur F. Voter", + collaboration = "", + title = "Temperature-accelerated dynamics for simulation of + infrequent events", + publisher = "AIP", + year = "2000", + journal = "The Journal of Chemical Physics", + volume = "112", + number = "21", + pages = "9599--9606", + keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES; + MOLECULAR DYNAMICS METHOD; surface diffusion", + URL = "http://link.aip.org/link/?JCP/112/9599/1", + doi = "10.1063/1.481576", + notes = "temperature accelerated dynamics, tad", +} + +@Article{voter98, + title = "Parallel replica method for dynamics of infrequent + events", + author = "Arthur F. Voter", + journal = "Phys. Rev. B", + volume = "57", + number = "22", + pages = "R13985--R13988", + numpages = "3", + year = "1998", + month = jun, + doi = "10.1103/PhysRevB.57.R13985", + publisher = "American Physical Society", + notes = "parallel replica method, accelerated md", +} + +@Article{wu99, + author = "Xiongwu Wu and Shaomeng Wang", + collaboration = "", + title = "Enhancing systematic motion in molecular dynamics + simulation", + publisher = "AIP", + year = "1999", + journal = "The Journal of Chemical Physics", + volume = "110", + number = "19", + pages = "9401--9410", + keywords = "molecular dynamics method; argon; Lennard-Jones + potential; crystallisation; liquid theory", + URL = "http://link.aip.org/link/?JCP/110/9401/1", + doi = "10.1063/1.478948", + notes = "self guided md, sgmd, accelerated md, enhancing + systematic motion", +} + +@Article{choudhary05, + author = "Devashish Choudhary and Paulette Clancy", + collaboration = "", + title = "Application of accelerated molecular dynamics schemes + to the production of amorphous silicon", + publisher = "AIP", + year = "2005", + journal = "The Journal of Chemical Physics", + volume = "122", + number = "15", + eid = "154509", + numpages = "8", + pages = "154509", + keywords = "molecular dynamics method; silicon; glass structure; + amorphous semiconductors", + URL = "http://link.aip.org/link/?JCP/122/154509/1", + doi = "10.1063/1.1878733", + notes = "explanation of sgmd and hyper md, applied to amorphous + silicon", +} + +@Article{taylor93, + author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele", + collaboration = "", + title = "Carbon precipitation in silicon: Why is it so + difficult?", + publisher = "AIP", + year = "1993", + journal = "Applied Physics Letters", + volume = "62", + number = "25", + pages = "3336--3338", + keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED + MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE + ENERGY", + URL = "http://link.aip.org/link/?APL/62/3336/1", + doi = "10.1063/1.109063", + notes = "interfacial energy of cubic sic and si", +} + +@Article{chaussende08, + title = "Prospects for 3{C}-Si{C} bulk crystal growth", + journal = "Journal of Crystal Growth", + volume = "310", + number = "5", + pages = "976--981", + year = "2008", + note = "Proceedings of the E-MRS Conference, Symposium G - + Substrates of Wide Bandgap Materials", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2007.11.140", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082", + author = "D. Chaussende and F. Mercier and A. Boulle and F. + Conchon and M. Soueidan and G. Ferro and A. Mantzari + and A. Andreadou and E. K. Polychroniadis and C. + Balloud and S. Juillaguet and J. Camassel and M. Pons", + notes = "3c-sic crystal growth, sic fabrication + links, + metastable", +} + +@Article{feynman39, + title = "Forces in Molecules", + author = "R. P. Feynman", + journal = "Phys. Rev.", + volume = "56", + number = "4", + pages = "340--343", + numpages = "3", + year = "1939", + month = aug, + doi = "10.1103/PhysRev.56.340", + publisher = "American Physical Society", + notes = "hellmann feynman forces", +} + +@Article{buczko00, + title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and + $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of + their Contrasting Properties", + author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates + T. Pantelides", + journal = "Phys. Rev. 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K{\"{o}}gler", + collaboration = "", + title = "Structural relation between Si and Si{C} formed by + carbon ion implantation", + publisher = "AIP", + year = "2002", + journal = "Journal of Applied Physics", + volume = "91", + number = "3", + pages = "1287--1292", + keywords = "silicon compounds; wide band gap semiconductors; ion + implantation; annealing; X-ray scattering; transmission + electron microscopy", + URL = "http://link.aip.org/link/?JAP/91/1287/1", + doi = "10.1063/1.1428105", + notes = "3c-sic alignement to si host in ibs depending on + temperature, might explain c int to c sub trafo", +} + +@Article{lucas10, + author = "G Lucas and M Bertolus and L Pizzagalli", + title = "An environment-dependent interatomic potential for + silicon carbide: calculation of bulk properties, + high-pressure phases, point and extended defects, and + amorphous structures", + journal = "Journal of Physics: Condensed Matter", + volume = "22", + number = "3", + pages = "035802", + URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802", + year = "2010", + notes = "edip sic", +} + +@Article{godet03, + author = "J Godet and L Pizzagalli and S Brochard and P + Beauchamp", + title = "Comparison between classical potentials and ab initio + methods for silicon under large shear", + journal = "Journal of Physics: Condensed Matter", + volume = "15", + number = "41", + pages = "6943", + URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004", + year = "2003", + notes = "comparison of empirical potentials, stillinger weber, + edip, tersoff, ab initio", +} + +@Article{moriguchi98, + title = "Verification of Tersoff's Potential for Static + Structural Analysis of Solids of Group-{IV} Elements", + author = "Koji Moriguchi and Akira Shintani", + journal = "Japanese Journal of Applied Physics", + volume = "37", + number = "Part 1, No. 2", + pages = "414--422", + numpages = "8", + year = "1998", + URL = "http://jjap.ipap.jp/link?JJAP/37/414/", + doi = "10.1143/JJAP.37.414", + publisher = "The Japan Society of Applied Physics", + notes = "tersoff stringent test", +}