X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=df700f14906679d1f1b72835a60ff450e56cbfad;hb=d57ca885a977e235d7603be3520e88dc315de264;hp=eb1848b9f79e3630a62dd58d671664c2e4738fcf;hpb=26183120b49637d9db5dc6650085dc7318ac1a6c;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index eb1848b..df700f1 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -68,7 +68,7 @@ author = "G. R. Fisher and P. Barnes", title = "Towards a unified view of polytypism in silicon carbide", - journal = "Philosophical Magazine Part B", + journal = "Philos. Mag. B", volume = "61", pages = "217--236", year = "1990", @@ -82,12 +82,14 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A: Mater. Sci. Process.", volume = "76", pages = "827--835", month = mar, year = "2003", - notes = "dual implantation, sic prec enhanced by vacancies", + notes = "dual implantation, sic prec enhanced by vacancies, + precipitation by interstitial and substitutional + carbon, both mechanisms explained + refs", } @Book{laplace, @@ -216,7 +218,7 @@ title = "Molecular dynamics with coupling to an external bath", publisher = "AIP", year = "1984", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "81", number = "8", pages = "3684--3690", @@ -233,8 +235,7 @@ title = "Molecular dynamics determination of defect energetics in beta -Si{C} using three representative empirical potentials", - journal = "Modelling and Simulation in Materials Science and - Engineering", + journal = "Modell. Simul. Mater. Sci. Eng.", volume = "3", number = "5", pages = "615--627", @@ -294,7 +295,7 @@ dumbbell configuration", } -@Article{gao02, +@Article{gao02a, title = "Cascade overlap and amorphization in $3{C}-Si{C}:$ Defect accumulation, topological features, and disordering", @@ -316,8 +317,7 @@ @Article{devanathan98, title = "Computer simulation of a 10 ke{V} Si displacement cascade in Si{C}", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "141", number = "1-4", pages = "118--122", @@ -332,7 +332,7 @@ @Article{devanathan98_2, title = "Displacement threshold energies in [beta]-Si{C}", - journal = "Journal of Nuclear Materials", + journal = "J. Nucl. Mater.", volume = "253", number = "1-3", pages = "47--52", @@ -375,6 +375,28 @@ notes = "si self interstitial, diffusion, tbmd", } +@Article{johnson98, + author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la + Rubia", + collaboration = "", + title = "A kinetic Monte--Carlo study of the effective + diffusivity of the silicon self-interstitial in the + presence of carbon and boron", + publisher = "AIP", + year = "1998", + journal = "J. Appl. Phys.", + volume = "84", + number = "4", + pages = "1963--1967", + keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS; + CARBON ADDITIONS; BORON ADDITIONS; elemental + semiconductors; self-diffusion", + URL = "http://link.aip.org/link/?JAP/84/1963/1", + doi = "10.1063/1.368328", + notes = "kinetic monte carlo of si self interstitial + diffsuion", +} + @Article{bar-yam84, title = "Barrier to Migration of the Silicon Self-Interstitial", @@ -391,6 +413,39 @@ notes = "si self-interstitial migration barrier", } +@Article{bar-yam84_2, + title = "Electronic structure and total-energy migration + barriers of silicon self-interstitials", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "30", + number = "4", + pages = "1844--1852", + numpages = "8", + year = "1984", + month = aug, + doi = "10.1103/PhysRevB.30.1844", + publisher = "American Physical Society", +} + +@Article{bloechl93, + title = "First-principles calculations of self-diffusion + constants in silicon", + author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car + and D. B. Laks and W. Andreoni and S. T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "70", + number = "16", + pages = "2435--2438", + numpages = "3", + year = "1993", + month = apr, + doi = "10.1103/PhysRevLett.70.2435", + publisher = "American Physical Society", + notes = "si self int diffusion by ab initio md, formation + entropy calculations", +} + @Article{colombo02, title = "Tight-binding theory of native point defects in silicon", @@ -422,6 +477,57 @@ silicon, si self interstitials, free energy", } +@Article{goedecker02, + title = "A Fourfold Coordinated Point Defect in Silicon", + author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", + journal = "Phys. Rev. Lett.", + volume = "88", + number = "23", + pages = "235501", + numpages = "4", + year = "2002", + month = may, + doi = "10.1103/PhysRevLett.88.235501", + publisher = "American Physical Society", + notes = "first time ffcd, fourfold coordinated point defect in + silicon", +} + +@Article{sahli05, + title = "Ab initio molecular dynamics simulation of + self-interstitial diffusion in silicon", + author = "Beat Sahli and Wolfgang Fichtner", + journal = "Phys. Rev. B", + volume = "72", + number = "24", + pages = "245210", + numpages = "6", + year = "2005", + month = dec, + doi = "10.1103/PhysRevB.72.245210", + publisher = "American Physical Society", + notes = "si self int, diffusion, barrier height, voronoi + mapping applied", +} + +@Article{hobler05, + title = "Ab initio calculations of the interaction between + native point defects in silicon", + journal = "Mater. Sci. Eng., B", + volume = "124-125", + number = "", + pages = "368--371", + year = "2005", + note = "EMRS 2005, Symposium D - Materials Science and Device + Issues for Future Technologies", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2005.08.072", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4", + author = "G. Hobler and G. Kresse", + notes = "vasp intrinsic si defect interaction study, capture + radius", +} + @Article{ma10, title = "Ab initio study of self-diffusion in silicon over a wide temperature range: Point defect states and @@ -439,6 +545,21 @@ notes = "si self interstitial diffusion + refs", } +@Article{posselt06, + title = "Atomistic simulations on the thermal stability of the + antisite pair in 3{C}- and 4{H}-Si{C}", + author = "M. Posselt and F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "73", + number = "12", + pages = "125206", + numpages = "8", + year = "2006", + month = mar, + doi = "10.1103/PhysRevB.73.125206", + publisher = "American Physical Society", +} + @Article{posselt08, title = "Correlation between self-diffusion in Si and the migration mechanisms of vacancies and @@ -474,6 +595,66 @@ notes = "defects in 3c-sic", } +@Article{gao02, + title = "Empirical potential approach for defect properties in + 3{C}-Si{C}", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "191", + number = "1-4", + pages = "487--496", + year = "2002", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(02)00600-6", + URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7", + author = "Fei Gao and William J. Weber", + keywords = "Empirical potential", + keywords = "Defect properties", + keywords = "Silicon carbide", + keywords = "Computer simulation", + notes = "sic potential, brenner type, like erhart/albe", +} + +@Article{gao04, + title = "Atomistic study of intrinsic defect migration in + 3{C}-Si{C}", + author = "Fei Gao and William J. Weber and M. Posselt and V. + Belko", + journal = "Phys. Rev. B", + volume = "69", + number = "24", + pages = "245205", + numpages = "5", + year = "2004", + month = jun, + doi = "10.1103/PhysRevB.69.245205", + publisher = "American Physical Society", + notes = "defect migration in sic", +} + +@Article{gao07, + author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and + W. J. Weber", + collaboration = "", + title = "Ab Initio atomic simulations of antisite pair recovery + in cubic silicon carbide", + publisher = "AIP", + year = "2007", + journal = "Appl. Phys. Lett.", + volume = "90", + number = "22", + eid = "221915", + numpages = "3", + pages = "221915", + keywords = "ab initio calculations; silicon compounds; antisite + defects; wide band gap semiconductors; molecular + dynamics method; density functional theory; + electron-hole recombination; photoluminescence; + impurities; diffusion", + URL = "http://link.aip.org/link/?APL/90/221915/1", + doi = "10.1063/1.2743751", +} + @Article{mattoni2002, title = "Self-interstitial trapping by carbon complexes in crystalline silicon", @@ -526,6 +707,58 @@ dumbbell", } +@Article{capaz98, + title = "Theory of carbon-carbon pairs in silicon", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "58", + number = "15", + pages = "9845--9850", + numpages = "5", + year = "1998", + month = oct, + doi = "10.1103/PhysRevB.58.9845", + publisher = "American Physical Society", + notes = "c_i c_s pair configuration, theoretical results", +} + +@Article{song90_2, + title = "Bistable interstitial-carbon--substitutional-carbon + pair in silicon", + author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D. + Watkins", + journal = "Phys. Rev. B", + volume = "42", + number = "9", + pages = "5765--5783", + numpages = "18", + year = "1990", + month = sep, + doi = "10.1103/PhysRevB.42.5765", + publisher = "American Physical Society", + notes = "c_i c_s pair configuration, experimental results", +} + +@Article{liu02, + author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and + Shifeng Lu and Xiang-Yang Liu", + collaboration = "", + title = "Ab initio modeling and experimental study of {C}--{B} + interactions in Si", + publisher = "AIP", + year = "2002", + journal = "Appl. Phys. Lett.", + volume = "80", + number = "1", + pages = "52--54", + keywords = "silicon; boron; carbon; elemental semiconductors; + impurity-defect interactions; ab initio calculations; + secondary ion mass spectra; diffusion; interstitials", + URL = "http://link.aip.org/link/?APL/80/52/1", + doi = "10.1063/1.1430505", + notes = "c-c 100 split, lower as a and b states of capaz", +} + @Article{dal_pino93, title = "Ab initio investigation of carbon-related defects in silicon", @@ -645,7 +878,7 @@ @Article{song90, title = "{EPR} identification of the single-acceptor state of interstitial carbon in silicon", - author = "G. D. Watkins L. W. Song", + author = "L. W. Song and G. D. Watkins", journal = "Phys. Rev. B", volume = "42", number = "9", @@ -662,7 +895,7 @@ author = "A K Tipping and R C Newman", title = "The diffusion coefficient of interstitial carbon in silicon", - journal = "Semiconductor Science and Technology", + journal = "Semicond. Sci. Technol.", volume = "2", number = "5", pages = "315--317", @@ -688,7 +921,7 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - journal = "Materials Science and Engineering B", + journal = "Mater. Sci. Eng., B", volume = "89", number = "1-3", pages = "241--245", @@ -709,7 +942,7 @@ silicon by transmission electron microscopy", publisher = "AIP", year = "1997", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "70", number = "2", pages = "252--254", @@ -735,25 +968,31 @@ volume = "", number = "", pages = "675--678", - keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C - atom/radiation induced defect interaction;C depth - distribution;C precipitation;C-Si defects;C-Si - dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high - energy ion implantation;ion implantation;metastable - agglomerates;microdefects;positron annihilation - spectroscopy;rapid thermal annealing;secondary ion mass - spectrometry;vacancy clusters;buried - layers;carbon;elemental semiconductors;impurity-defect - interactions;ion implantation;positron - annihilation;precipitation;rapid thermal - annealing;secondary ion mass - spectra;silicon;transmission electron - microscopy;vacancies (crystal);", doi = "10.1109/IIT.1996.586497", ISSN = "", notes = "c-si agglomerates dumbbells", } +@Article{werner98, + author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and + D. C. Jacobson", + collaboration = "", + title = "Carbon diffusion in silicon", + publisher = "AIP", + year = "1998", + journal = "Appl. Phys. Lett.", + volume = "73", + number = "17", + pages = "2465--2467", + keywords = "silicon; carbon; elemental semiconductors; diffusion; + secondary ion mass spectra; semiconductor epitaxial + layers; annealing; impurity-defect interactions; + impurity distribution", + URL = "http://link.aip.org/link/?APL/73/2465/1", + doi = "10.1063/1.122483", + notes = "c diffusion in si, kick out mechnism", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -762,14 +1001,37 @@ y]{C}[sub y]/Si heterostructures", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "6", pages = "3656--3668", keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", URL = "http://link.aip.org/link/?JAP/76/3656/1", doi = "10.1063/1.357429", - notes = "strained si-c to 3c-sic, carbon nucleation + refs", + notes = "strained si-c to 3c-sic, carbon nucleation + refs, + precipitation by substitutional carbon, coherent prec, + coherent to incoherent transition strain vs interface + energy", +} + +@Article{fischer95, + author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J. + Osten", + collaboration = "", + title = "Investigation of the high temperature behavior of + strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", + publisher = "AIP", + year = "1995", + journal = "J. Appl. Phys.", + volume = "77", + number = "5", + pages = "1934--1937", + keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS; + XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE + PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION; + TEMPERATURE RANGE 04001000 K", + URL = "http://link.aip.org/link/?JAP/77/1934/1", + doi = "10.1063/1.358826", } @Article{edgar92, @@ -839,12 +1101,70 @@ NETHERLANDS", } +@Article{zirkelbach09, + title = "Molecular dynamics simulation of defect formation and + precipitation in heavily carbon doped silicon", + journal = "Mater. Sci. Eng., B", + volume = "159-160", + number = "", + pages = "149--152", + year = "2009", + note = "EMRS 2008 Spring Conference Symposium K: Advanced + Silicon Materials Research for Electronic and + Photovoltaic Applications", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2008.10.010", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39", + author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and + B. Stritzker", + keywords = "Silicon", + keywords = "Carbon", + keywords = "Silicon carbide", + keywords = "Nucleation", + keywords = "Defect formation", + keywords = "Molecular dynamics simulations", +} + +@Article{zirkelbach10a, + title = "Defects in carbon implanted silicon calculated by + classical potentials and first-principles methods", + journal = "Phys. Rev. B", + volume = "82", + number = "9", + pages = "066033", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", +} + +@Article{zirkelbach10b, + title = "First principles study of defects in carbon implanted + silicon", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", +} + +@Article{zirkelbach10c, + title = "...", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", +} + @Article{lindner99, title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "147", number = "1-4", pages = "249--255", @@ -860,8 +1180,7 @@ @Article{lindner99_2, title = "Mechanisms in the ion beam synthesis of Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "148", number = "1-4", pages = "528--533", @@ -876,8 +1195,7 @@ @Article{lindner01, title = "Ion beam synthesis of buried Si{C} layers in silicon: Basic physical processes", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "178", number = "1-4", pages = "44--54", @@ -901,6 +1219,25 @@ notes = "ibs, burried sic layers", } +@Article{lindner06, + title = "On the balance between ion beam induced nanoparticle + formation and displacive precipitate resolution in the + {C}-Si system", + journal = "Mater. Sci. Eng., C", + volume = "26", + number = "5-7", + pages = "857--861", + year = "2006", + note = "Current Trends in Nanoscience - from Materials to + Applications", + ISSN = "0928-4931", + doi = "DOI: 10.1016/j.msec.2005.09.099", + URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a", + author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth + and B. Stritzker", + notes = "c int diffusion barrier", +} + @Article{ito04, title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial @@ -924,7 +1261,7 @@ title = "Phase Transition for a Hard Sphere System", publisher = "AIP", year = "1957", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "27", number = "5", pages = "1208--1209", @@ -937,7 +1274,7 @@ title = "Studies in Molecular Dynamics. {I}. General Method", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "31", number = "2", pages = "459--466", @@ -1050,8 +1387,7 @@ @Article{wesch96, title = "Silicon carbide: synthesis and processing", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "116", number = "1-4", pages = "305--321", @@ -1071,7 +1407,7 @@ ZnSe-based semiconductor device technologies", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "3", pages = "1363--1398", @@ -1081,6 +1417,19 @@ FILMS; INDUSTRY", URL = "http://link.aip.org/link/?JAP/76/1363/1", doi = "10.1063/1.358463", + notes = "sic intro, properties", +} + +@Article{neudeck95, + author = "P. G. Neudeck", + title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} + {ELECTRONICS} {TECHNOLOGY}", + journal = "Journal of Electronic Materials", + year = "1995", + volume = "24", + number = "4", + pages = "283--288", + month = apr, } @Article{foo, @@ -1138,7 +1487,7 @@ doi = "DOI: 10.1016/0038-1101(96)00045-7", URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b", author = "J. B. Casady and R. W. Johnson", - notes = "sic intro" + notes = "sic intro", } @Article{giancarli98, @@ -1172,7 +1521,7 @@ @Article{tairov78, title = "Investigation of growth processes of ingots of silicon carbide single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "43", number = "2", pages = "209--212", @@ -1192,7 +1541,7 @@ cubic Si{C} for semiconductor devices", publisher = "AIP", year = "1983", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "42", number = "5", pages = "460--462", @@ -1211,7 +1560,7 @@ Si{C} on silicon", publisher = "AIP", year = "1987", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "61", number = "10", pages = "4889--4893", @@ -1246,7 +1595,7 @@ epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "73", number = "2", pages = "726--732", @@ -1267,7 +1616,7 @@ 6{H}-Si{C} substrates", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "14", pages = "1353--1355", @@ -1289,7 +1638,7 @@ silacyclobutane", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "2", pages = "1271--1273", @@ -1305,7 +1654,7 @@ title = "Epitaxial growth of Si{C} thin films on Si-stabilized [alpha]-Si{C}(0001) at low temperatures by solid-source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "154", number = "1-2", pages = "72--80", @@ -1325,7 +1674,7 @@ 6{H}--Si{C} by solid-source molecular beam epitaxy", publisher = "AIP", year = "1995", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "66", number = "23", pages = "3182--3184", @@ -1343,7 +1692,7 @@ {IMPLANTATION}", publisher = "AIP", year = "1971", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "18", number = "11", pages = "509--511", @@ -1361,7 +1710,7 @@ beam synthesis and incoherent lamp annealing", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "26", pages = "2242--2244", @@ -1378,7 +1727,7 @@ title = "Solubility of Carbon in Silicon and Germanium", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "30", number = "6", pages = "1551--1555", @@ -1395,7 +1744,7 @@ {B} in silicon", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "8", pages = "1150--1152", @@ -1410,8 +1759,7 @@ @Article{stolk95, title = "Implantation and transient boron diffusion: the role of the silicon self-interstitial", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "96", number = "1-2", pages = "187--195", @@ -1435,7 +1783,7 @@ diffusion in ion-implanted silicon", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "81", number = "9", pages = "6031--6050", @@ -1451,7 +1799,7 @@ of Si[sub 1 - y]{C}[sub y] random alloy layers", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "64", number = "3", pages = "324--326", @@ -1471,7 +1819,7 @@ - x - y]Ge[sub x]{C}[sub y]", publisher = "AIP", year = "1991", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "70", number = "4", pages = "2470--2472", @@ -1504,7 +1852,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1999", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "74", number = "6", pages = "836--838", @@ -1569,7 +1917,7 @@ title = "Electron Transport Model for Strained Silicon-Carbon Alloy", author = "Shu-Tong Chang and Chung-Yi Lin", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "44", number = "4B", pages = "2257--2262", @@ -1589,7 +1937,7 @@ Si(001)", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "82", number = "10", pages = "4977--4981", @@ -1643,7 +1991,7 @@ potential energy surfaces", publisher = "AIP", year = "2009", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "130", number = "11", eid = "114711", @@ -1664,7 +2012,7 @@ molecular dynamics method", publisher = "AIP", year = "1981", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "52", number = "12", pages = "7182--7190", @@ -1789,7 +2137,7 @@ simulation of infrequent events", publisher = "AIP", year = "1997", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "106", number = "11", pages = "4665--4677", @@ -1810,7 +2158,7 @@ infrequent events", publisher = "AIP", year = "2000", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "112", number = "21", pages = "9599--9606", @@ -1844,7 +2192,7 @@ simulation", publisher = "AIP", year = "1999", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "110", number = "19", pages = "9401--9410", @@ -1863,7 +2211,7 @@ to the production of amorphous silicon", publisher = "AIP", year = "2005", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "122", number = "15", eid = "154509", @@ -1884,7 +2232,7 @@ difficult?", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "62", number = "25", pages = "3336--3338", @@ -1898,7 +2246,7 @@ @Article{chaussende08, title = "Prospects for 3{C}-Si{C} bulk crystal growth", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "310", number = "5", pages = "976--981", @@ -1975,7 +2323,7 @@ 3{C}-Si{C}/Si (001) interface", publisher = "AIP", year = "2009", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "106", number = "7", eid = "073522", @@ -1999,7 +2347,7 @@ growth on Si(001) surface", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "7", pages = "4438--4445", @@ -2012,6 +2360,44 @@ model, interface", } +@Article{chirita97, + title = "Strain relaxation and thermal stability of the + 3{C}-Si{C}(001)/Si(001) interface: {A} molecular + dynamics study", + journal = "Thin Solid Films", + volume = "294", + number = "1-2", + pages = "47--49", + year = "1997", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/S0040-6090(96)09257-7", + URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4", + author = "V. Chirita and L. Hultman and L. R. Wallenberg", + keywords = "Strain relaxation", + keywords = "Interfaces", + keywords = "Thermal stability", + keywords = "Molecular dynamics", + notes = "tersoff sic/si interface study", +} + +@Article{cicero02, + title = "Ab initio Study of Misfit Dislocations at the + $Si{C}/Si(001)$ Interface", + author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra + Catellani", + journal = "Phys. Rev. Lett.", + volume = "89", + number = "15", + pages = "156101", + numpages = "4", + year = "2002", + month = sep, + doi = "10.1103/PhysRevLett.89.156101", + publisher = "American Physical Society", + notes = "sic/si interface study", +} + @Article{pizzagalli03, title = "Theoretical investigations of a highly mismatched interface: Si{C}/Si(001)", @@ -2072,7 +2458,7 @@ synchrotron x-ray diffraction", publisher = "AIP", year = "1999", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "86", number = "8", pages = "4184--4187", @@ -2081,8 +2467,8 @@ precipitation; semiconductor doping", URL = "http://link.aip.org/link/?JAP/86/4184/1", doi = "10.1063/1.371344", - notes = "sic conversion by ibs, detected substitutional - carbon", + notes = "sic conversion by ibs, detected substitutional carbon, + expansion of si lattice", } @Article{eichhorn02, @@ -2093,7 +2479,7 @@ carbon ion implantation", publisher = "AIP", year = "2002", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "91", number = "3", pages = "1287--1292", @@ -2112,7 +2498,7 @@ silicon carbide: calculation of bulk properties, high-pressure phases, point and extended defects, and amorphous structures", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "22", number = "3", pages = "035802", @@ -2126,7 +2512,7 @@ Beauchamp", title = "Comparison between classical potentials and ab initio methods for silicon under large shear", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "15", number = "41", pages = "6943", @@ -2140,7 +2526,7 @@ title = "Verification of Tersoff's Potential for Static Structural Analysis of Solids of Group-{IV} Elements", author = "Koji Moriguchi and Akira Shintani", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "37", number = "Part 1, No. 2", pages = "414--422", @@ -2152,6 +2538,22 @@ notes = "tersoff stringent test", } +@Article{mazzarolo01, + title = "Low-energy recoils in crystalline silicon: Quantum + simulations", + author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio + Lulli and Eros Albertazzi", + journal = "Phys. Rev. B", + volume = "63", + number = "19", + pages = "195207", + numpages = "4", + year = "2001", + month = apr, + doi = "10.1103/PhysRevB.63.195207", + publisher = "American Physical Society", +} + @Article{holmstroem08, title = "Threshold defect production in silicon determined by density functional theory molecular dynamics @@ -2173,8 +2575,7 @@ @Article{nordlund97, title = "Repulsive interatomic potentials calculated using Hartree-Fock and density-functional theory methods", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "132", number = "1", pages = "45--54", @@ -2191,7 +2592,7 @@ title = "Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "6", number = "1", pages = "15--50", @@ -2254,7 +2655,7 @@ title = "Accurate and simple density functional for the electronic exchange energy: Generalized gradient approximation", - author = "John P. Perdew and Wang Yue", + author = "John P. Perdew and Yue Wang", journal = "Phys. Rev. B", volume = "33", number = "12", @@ -2320,7 +2721,7 @@ @Article{zhu98, title = "Ab initio pseudopotential calculations of dopant diffusion in Si", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "12", number = "4", pages = "309--318", @@ -2346,7 +2747,7 @@ 950 [degree]{C}", publisher = "AIP", year = "1995", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "66", number = "20", pages = "2646--2648", @@ -2368,7 +2769,7 @@ alloys", publisher = "AIP", year = "1998", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "84", number = "8", pages = "4631--4633", @@ -2378,14 +2779,14 @@ annealing", URL = "http://link.aip.org/link/?JAP/84/4631/1", doi = "10.1063/1.368703", - notes = "coherent 3C-SiC, topotactic", + notes = "coherent 3C-SiC, topotactic, critical coherence size", } @Article{jones04, author = "R Jones and B J Coomer and P R Briddon", title = "Quantum mechanical modelling of defects in semiconductors", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "16", number = "27", pages = "S2643", @@ -2404,7 +2805,7 @@ molecular-beam epitaxy", publisher = "AIP", year = "2002", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "91", number = "9", pages = "5716--5727", @@ -2428,7 +2829,7 @@ doi = "10.1103/PhysRevB.55.2188", publisher = "American Physical Society", notes = "ab initio c in si and di-carbon defect, no formation - energies", + energies, different migration barriers and paths", } @Article{burnard93, @@ -2449,10 +2850,25 @@ carbon defect, formation energies", } +@Article{besson91, + title = "Electronic structure of interstitial carbon in + silicon", + author = "Morgan Besson and Gary G. DeLeo", + journal = "Phys. Rev. B", + volume = "43", + number = "5", + pages = "4028--4033", + numpages = "5", + year = "1991", + month = feb, + doi = "10.1103/PhysRevB.43.4028", + publisher = "American Physical Society", +} + @Article{kaxiras96, title = "Review of atomistic simulations of surface diffusion and growth on semiconductors", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "6", number = "2", pages = "158--172", @@ -2487,3 +2903,87 @@ notes = "constrained conjugate gradient relaxation technique (crt)", } + +@Article{gali03, + title = "Correlation between the antisite pair and the ${DI}$ + center in Si{C}", + author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and + I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and + W. J. Choyke", + journal = "Phys. Rev. B", + volume = "67", + number = "15", + pages = "155203", + numpages = "5", + year = "2003", + month = apr, + doi = "10.1103/PhysRevB.67.155203", + publisher = "American Physical Society", +} + +@Article{chen98, + title = "Production and recovery of defects in Si{C} after + irradiation and deformation", + journal = "J. Nucl. Mater.", + volume = "258-263", + number = "Part 2", + pages = "1803--1808", + year = "1998", + note = "", + ISSN = "0022-3115", + doi = "DOI: 10.1016/S0022-3115(98)00139-1", + URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b", + author = "J. Chen and P. Jung and H. Klein", +} + +@Article{weber01, + title = "Accumulation, dynamic annealing and thermal recovery + of ion-beam-induced disorder in silicon carbide", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "175-177", + number = "", + pages = "26--30", + year = "2001", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(00)00542-5", + URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577", + author = "W. J. Weber and W. Jiang and S. Thevuthasan", + keywords = "Amorphization", + keywords = "Irradiation effects", + keywords = "Thermal recovery", + keywords = "Silicon carbide", +} + +@Article{bockstedte03, + title = "Ab initio study of the migration of intrinsic defects + in $3{C}-Si{C}$", + author = "Michel Bockstedte and Alexander Mattausch and Oleg + Pankratov", + journal = "Phys. Rev. B", + volume = "68", + number = "20", + pages = "205201", + numpages = "17", + year = "2003", + month = nov, + doi = "10.1103/PhysRevB.68.205201", + publisher = "American Physical Society", + notes = "defect migration in sic", +} + +@Article{rauls03a, + title = "Theoretical study of vacancy diffusion and + vacancy-assisted clustering of antisites in Si{C}", + author = "E. Rauls and Th. Frauenheim and A. Gali and P. + De\'ak", + journal = "Phys. Rev. B", + volume = "68", + number = "15", + pages = "155208", + numpages = "9", + year = "2003", + month = oct, + doi = "10.1103/PhysRevB.68.155208", + publisher = "American Physical Society", +}