X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=e46169a2331baab91e8df0c41cac81114ee8bd08;hb=9bde449d77dcde728f5e525d76e39d9b18f125b0;hp=8556c401503113cdf334c01de51adc2dbabedaf8;hpb=caebb70f0d66dabdef917b2563ec1742c5144441;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 8556c40..e46169a 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -41,12 +41,17 @@
 }
 
 @Article{bean71,
-  author =       "A. R. Bean and R. C. Newman",
-  title =        "",
-  journal =      "J. Phys. Chem. Solids",
+  title =        "The solubility of carbon in pulled silicon crystals",
+  journal =      "Journal of Physics and Chemistry of Solids",
   volume =       "32",
-  pages =        "1211",
+  number =       "6",
+  pages =        "1211--1219",
   year =         "1971",
+  note =         "",
+  ISSN =         "0022-3697",
+  doi =          "DOI: 10.1016/S0022-3697(71)80179-8",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
+  author =       "A. R. Bean and R. C. Newman",
   notes =        "experimental solubility data of carbon in silicon",
 }
 
@@ -414,7 +419,7 @@
   doi =          "10.1103/PhysRevB.68.235205",
   publisher =    "American Physical Society",
   notes =        "formation energies of intrinisc point defects in
-                 silicon, si self interstitials",
+                 silicon, si self interstitials, free energy",
 }
 
 @Article{ma10,
@@ -683,13 +688,15 @@
 
 @Article{laveant2002,
   title =        "Epitaxy of carbon-rich silicon with {MBE}",
-  author =       "P. Laveant and G. Gerth and P. Werner and U.
-                 G{\"o}sele",
   journal =      "Materials Science and Engineering B",
   volume =       "89",
   number =       "1-3",
   pages =        "241--245",
-  keywords =     "Growth; Epitaxy; MBE; Carbon; Silicon",
+  year =         "2002",
+  ISSN =         "0921-5107",
+  doi =          "DOI: 10.1016/S0921-5107(01)00794-2",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
+  author =       "P. Lavéant and G. Gerth and P. Werner and U. Gösele",
   notes =        "low c in si, tensile stress to compensate compressive
                  stress, avoid sic precipitation",
 }
@@ -2384,3 +2391,91 @@
   year =         "2004",
   notes =        "ab inito init, vibrational modes, c defect in si",
 }
+
+@Article{park02,
+  author =       "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
+                 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
+                 J. E. Greene and S. G. Bishop",
+  collaboration = "",
+  title =        "Carbon incorporation pathways and lattice sites in
+                 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
+                 molecular-beam epitaxy",
+  publisher =    "AIP",
+  year =         "2002",
+  journal =      "Journal of Applied Physics",
+  volume =       "91",
+  number =       "9",
+  pages =        "5716--5727",
+  URL =          "http://link.aip.org/link/?JAP/91/5716/1",
+  doi =          "10.1063/1.1465122",
+  notes =        "c substitutional incorporation pathway, dft and expt",
+}
+
+@Article{leary97,
+  title =        "Dynamic properties of interstitial carbon and
+                 carbon-carbon pair defects in silicon",
+  author =       "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
+                 Torres",
+  journal =      "Phys. Rev. B",
+  volume =       "55",
+  number =       "4",
+  pages =        "2188--2194",
+  numpages =     "6",
+  year =         "1997",
+  month =        jan,
+  doi =          "10.1103/PhysRevB.55.2188",
+  publisher =    "American Physical Society",
+  notes =        "ab initio c in si and di-carbon defect, no formation
+                 energies",
+}
+
+@Article{burnard93,
+  title =        "Interstitial carbon and the carbon-carbon pair in
+                 silicon: Semiempirical electronic-structure
+                 calculations",
+  author =       "Matthew J. Burnard and Gary G. DeLeo",
+  journal =      "Phys. Rev. B",
+  volume =       "47",
+  number =       "16",
+  pages =        "10217--10225",
+  numpages =     "8",
+  year =         "1993",
+  month =        apr,
+  doi =          "10.1103/PhysRevB.47.10217",
+  publisher =    "American Physical Society",
+  notes =        "semi empirical mndo, pm3 and mindo3 c in si and di
+                 carbon defect, formation energies",
+}
+
+@Article{kaxiras96,
+  title =        "Review of atomistic simulations of surface diffusion
+                 and growth on semiconductors",
+  journal =      "Computational Materials Science",
+  volume =       "6",
+  number =       "2",
+  pages =        "158--172",
+  year =         "1996",
+  note =         "Proceedings of the Workshop on Virtual Molecular Beam
+                 Epitaxy",
+  ISSN =         "0927-0256",
+  doi =          "DOI: 10.1016/0927-0256(96)00030-4",
+  URL =          "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
+  author =       "Efthimios Kaxiras",
+  notes =        "might contain c 100 db formation energy",
+}
+
+@Article{kaukonen98,
+  title = {Effect of N and B doping on the growth of CVD diamond $(100):H(2\ifmmode\times\else\texttimes\fi{}1)$ surfaces},
+  author = {Kaukonen, M.  and Sitch, P. K. and Jungnickel, G.  and Nieminen, R. M. and P\"oykk\"o, Sami  and Porezag, D.  and Frauenheim, Th. },
+  journal = {Phys. Rev. B},
+  volume = {57},
+  number = {16},
+  pages = {9965--9970},
+  numpages = {5},
+  year = {1998},
+  month = {Apr},
+  doi = {10.1103/PhysRevB.57.9965},
+  publisher = {American Physical Society},
+  notes = "constrained conjugate gradient relaxation technique (crt)"
+}
+