X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=e575307a37bc3301e89a5c2ef13f34714a2bd625;hb=45c64a012b9adeee522d428c19bc6f263d7c47b9;hp=c98683febc3f028bddd741c72ea1bcaf83f3f30f;hpb=8fe6107dd7386705bd4a8b96d634cf1e8ee90659;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index c98683f..e575307 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1535,15 +1535,21 @@
 }
 
 @Article{zirkelbach11,
-  title =        "Combined ab initio and classical potential simulation
-                 study on the silicon carbide precipitation in silicon",
-  journal =      "accepted for publication in Phys. Rev. B",
-  volume =       "",
-  number =       "",
-  pages =        "",
-  year =         "2011",
+  journal =      "Phys. Rev. B",
+  month =        aug,
+  URL =          "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
+  publisher =    "American Physical Society",
   author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
                  K. N. Lindner and W. G. Schmidt and E. Rauls",
+  title =        "Combined \textit{ab initio} and classical potential
+                 simulation study on silicon carbide precipitation in
+                 silicon",
+  year =         "2011",
+  pages =        "064126",
+  numpages =     "18",
+  volume =       "84",
+  doi =          "10.1103/PhysRevB.84.064126",
+  issue =        "6",
   abstract =     "Atomistic simulations on the silicon carbide
                  precipitation in bulk silicon employing both, classical
                  potential and first-principles methods are presented.
@@ -1732,6 +1738,22 @@
   notes =        "c int diffusion barrier",
 }
 
+@Article{haeberlen10,
+  title =        "Structural characterization of cubic and hexagonal
+                 Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
+  journal =      "Journal of Crystal Growth",
+  volume =       "312",
+  number =       "6",
+  pages =        "762--769",
+  year =         "2010",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "10.1016/j.jcrysgro.2009.12.048",
+  URL =          "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
+  author =       "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
+                 K. N. Lindner and B. Stritzker",
+}
+
 @Article{ito04,
   title =        "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
                  application in buffer layer for Ga{N} epitaxial
@@ -3444,7 +3466,7 @@
 }
 
 @Article{parcas_md,
-  title =        "{PARCAS} molecular dynamics code",
+  journal =      "{PARCAS} molecular dynamics code",
   author =       "K. Nordlund",
   year =         "2008",
 }
@@ -4006,7 +4028,6 @@
   title =        "The Fitting of Pseudopotentials to Experimental Data
                  and Their Subsequent Application",
   editor =       "Frederick Seitz Henry Ehrenreich and David Turnbull",
-  booktitle =    "",
   publisher =    "Academic Press",
   year =         "1970",
   volume =       "24",
@@ -5139,3 +5160,47 @@
   year =         "1994",
   publisher =    "Suhrkamp",
 }
+
+% Generated at www.see-out.com/sandramau/bibpat.html on on 19/09/11 03:57:45 CDT
+@Misc{ATTENBERGER:2003:misc,
+  author =       "Wilfried ATTENBERGER and Jörg LINDNER and Bernd
+                 STRITZKER",
+  title =        "A {METHOD} {FOR} {FORMING} {A} {LAYERED}
+                 {SEMICONDUCTOR} {STRUCTURE} {AND} {CORRESPONDING}
+                 {STRUCTURE}",
+  year =         "2003",
+  month =        apr,
+  day =          "24",
+  note =         "WO 2003/034484 A3R4",
+  version =      "A3R4",
+  howpublished = "Patent Application",
+  nationality =  "WO",
+  URL =          "http://www.patentlens.net/patentlens/patent/WO_2003_034484_A3R4/en/",
+  filing_num =   "EP0211423",
+  yearfiled =    "2002",
+  monthfiled =   "10",
+  dayfiled =     "11",
+  pat_refs =     "",
+  ipc_class =    "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+                 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+                 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+  us_class =     "",
+  abstract =     "The following invention provides a method for forming
+                 a layered semiconductor structure having a layer (5) of
+                 a first semiconductor material on a substrate (1; 1')
+                 of at least one second semiconductor material,
+                 comprising the steps of: providing said substrate (1;
+                 1'); burying said layer (5) of said first semiconductor
+                 material in said substrate (1; 1'), said buried layer
+                 (5) having an upper surface (105) and a lower surface
+                 (105) and dividing said substrate (1; 1') into an upper
+                 part (1a) and a lower part (1b; 1b', 1c); creating a
+                 buried damage layer (10; 10'; 10'', 100'') which at
+                 least partly adjoins and/or at least partly includes
+                 said upper surface (105) of said buried layer (5); and
+                 removing said upper part (1a) of said substrate (1; 1')
+                 and said buried damage layer (10; 10'; 10'', 100'') for
+                 exposing said buried layer (5). The invention also
+                 provides a corresponding layered semiconductor
+                 structure.",
+}