X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=f7a5e862c88f78a0341f7e70832a417d11965747;hb=2231d0370c8a7f8e8ac31372c3403049aaddb1a2;hp=372a642f5ac031151cc9bf528e44d78e8767e2e1;hpb=1d5283e2031c9611f494a9a98d115f32cd9898de;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 372a642..f7a5e86 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1491,18 +1491,6 @@ notes = "sic intro, properties", } -@Article{neudeck95, - author = "P. G. Neudeck", - title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} - {ELECTRONICS} {TECHNOLOGY}", - journal = "Journal of Electronic Materials", - year = "1995", - volume = "24", - number = "4", - pages = "283--288", - month = apr, -} - @Article{foo, author = "Noch Unbekannt", title = "How to find references", @@ -1619,6 +1607,54 @@ author = "Yu.M. Tairov and V. F. Tsvetkov", } +@Article{barrett91, + title = "Si{C} boule growth by sublimation vapor transport", + journal = "Journal of Crystal Growth", + volume = "109", + number = "1-4", + pages = "17--23", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90152-U", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1", + author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and + R. H. Hopkins and W. J. Choyke", +} + +@Article{barrett93, + title = "Growth of large Si{C} single crystals", + journal = "Journal of Crystal Growth", + volume = "128", + number = "1-4", + pages = "358--362", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90348-Z", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c", + author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and + R. H. Hopkins and P. G. McMullin and R. C. Clarke and + W. J. Choyke", +} + +@Article{stein93, + title = "Control of polytype formation by surface energy + effects during the growth of Si{C} monocrystals by the + sublimation method", + journal = "Journal of Crystal Growth", + volume = "131", + number = "1-2", + pages = "71--74", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90397-F", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d", + author = "R. A. Stein and P. Lanig", + notes = "6h and 4h, sublimation technique", +} + @Article{nishino83, author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. Will", @@ -1674,6 +1710,28 @@ notes = "blue light emitting diodes (led)", } +@Article{powell87_2, + author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and + C. M. Chorey and T. T. Cheng and P. Pirouz", + collaboration = "", + title = "Improved beta-Si{C} heteroepitaxial films using + off-axis Si substrates", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "51", + number = "11", + pages = "823--825", + keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED + COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE + STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING + FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES; + OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS", + URL = "http://link.aip.org/link/?APL/51/823/1", + doi = "10.1063/1.98824", + notes = "improved sic on off-axis si substrates, reduced apbs", +} + @Article{kimoto93, author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo and Hiroyuki Matsunami", @@ -2350,6 +2408,19 @@ metastable", } +@Article{chaussende07, + author = "D. Chaussende and P. J. Wellmann and M. Pons", + title = "Status of Si{C} bulk growth processes", + journal = "Journal of Physics D: Applied Physics", + volume = "40", + number = "20", + pages = "6150", + URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02", + year = "2007", + notes = "review of sic single crystal growth methods, process + modelling", +} + @Article{feynman39, title = "Forces in Molecules", author = "R. P. Feynman", @@ -2446,6 +2517,20 @@ model, interface", } +@Article{kitabatake97, + author = "Makoto Kitabatake", + title = "Simulations and Experiments of 3{C}-Si{C}/Si + Heteroepitaxial Growth", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "physica status solidi (b)", + volume = "202", + pages = "405--420", + URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + notes = "3c-sic heteroepitaxial growth on si off-axis model", +} + @Article{chirita97, title = "Strain relaxation and thermal stability of the 3{C}-Si{C}(001)/Si(001) interface: {A} molecular @@ -3244,5 +3329,133 @@ optimization", URL = "http://link.aip.org/link/?JAP/53/6962/1", doi = "10.1063/1.330041", + notes = "blue led, sublimation process", +} + +@Article{neudeck95, + author = "Philip Neudeck", + affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark + Road 44135 Cleveland OH", + title = "Progress in silicon carbide semiconductor electronics + technology", + journal = "Journal of Electronic Materials", + publisher = "Springer Boston", + ISSN = "0361-5235", + keyword = "Chemistry and Materials Science", + pages = "283--288", + volume = "24", + issue = "4", + URL = "http://dx.doi.org/10.1007/BF02659688", + note = "10.1007/BF02659688", + year = "1995", + notes = "sic data, advantages of 3c sic", } +@Article{bhatnagar93, + author = "M. Bhatnagar and B. J. Baliga", + journal = "Electron Devices, IEEE Transactions on", + title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power + devices", + year = "1993", + month = mar, + volume = "40", + number = "3", + pages = "645--655", + keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky + rectifiers;Si;SiC;breakdown voltages;drift region + properties;output characteristics;power MOSFETs;power + semiconductor devices;switching characteristics;thermal + analysis;Schottky-barrier diodes;electric breakdown of + solids;insulated gate field effect transistors;power + transistors;semiconductor materials;silicon;silicon + compounds;solid-state rectifiers;thermal analysis;", + doi = "10.1109/16.199372", + ISSN = "0018-9383", + notes = "comparison 3c 6h sic and si devices", +} + +@Article{neudeck94, + author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. + A. Powell and C. S. Salupo and L. G. Matus", + journal = "Electron Devices, IEEE Transactions on", + title = "Electrical properties of epitaxial 3{C}- and + 6{H}-Si{C} p-n junction diodes produced side-by-side on + 6{H}-Si{C} substrates", + year = "1994", + month = may, + volume = "41", + number = "5", + pages = "826--835", + keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400 + C;6H-SiC layers;6H-SiC substrates;CVD + process;SiC;chemical vapor deposition;doping;electrical + properties;epitaxial layers;light + emission;low-tilt-angle 6H-SiC substrates;p-n junction + diodes;polytype;rectification characteristics;reverse + leakage current;reverse voltages;temperature;leakage + currents;power electronics;semiconductor + diodes;semiconductor epitaxial layers;semiconductor + growth;semiconductor materials;silicon + compounds;solid-state rectifiers;substrates;vapour + phase epitaxial growth;", + doi = "10.1109/16.285038", + ISSN = "0018-9383", + notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h + substrate", +} + +@Article{schulze98, + author = "N. Schulze and D. L. Barrett and G. Pensl", + collaboration = "", + title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C} + single crystals by physical vapor transport", + publisher = "AIP", + year = "1998", + journal = "Applied Physics Letters", + volume = "72", + number = "13", + pages = "1632--1634", + keywords = "silicon compounds; semiconductor materials; + semiconductor growth; crystal growth from vapour; + photoluminescence; Hall mobility", + URL = "http://link.aip.org/link/?APL/72/1632/1", + doi = "10.1063/1.121136", + notes = "micropipe free 6h-sic pvt growth", +} + +@Article{pirouz87, + author = "P. Pirouz and C. M. Chorey and J. A. Powell", + collaboration = "", + title = "Antiphase boundaries in epitaxially grown beta-Si{C}", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "50", + number = "4", + pages = "221--223", + keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON + MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL + VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION + ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE + BOUNDARIES", + URL = "http://link.aip.org/link/?APL/50/221/1", + doi = "10.1063/1.97667", + notes = "apb 3c-sic heteroepitaxy on si", +} + +@Article{shibahara86, + title = "Surface morphology of cubic Si{C}(100) grown on + Si(100) by chemical vapor deposition", + journal = "Journal of Crystal Growth", + volume = "78", + number = "3", + pages = "538--544", + year = "1986", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(86)90158-2", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9", + author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki + Matsunami", + notes = "defects in 3c-sis cvd on si, anti phase boundaries", +}