X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=fe532d22fb55c995d66a6e5be0f258e84f84cef2;hb=c1149864c4cca20d9d017562b97bde964ecb52d1;hp=a79bb6765e153d7dbc881393b4ed9e1cf8bd13f0;hpb=ca9d33ccbdd983e1c6290457825953e0ee6220d0;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index a79bb67..fe532d2 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -133,6 +133,17 @@
 }
 
 @Article{capano97,
+  author =       "M. A. Capano and R. J. Trew",
+  title =        "Silicon carbide electronic materials and devices",
+  journal =      "MRS Bull.",
+  year =         "1997",
+  volume =       "22",
+  number =       "3",
+  pages =        "19--22",
+  publisher =    "MATERIALS RESEARCH SOCIETY",
+}
+
+@Article{capano97_old,
   author =       "M. A. Capano and R. J. Trew",
   title =        "Silicon Carbide Electronic Materials and Devices",
   journal =      "MRS Bull.",
@@ -1524,15 +1535,21 @@
 }
 
 @Article{zirkelbach11,
-  title =        "Combined ab initio and classical potential simulation
-                 study on the silicon carbide precipitation in silicon",
-  journal =      "accepted for publication in Phys. Rev. B",
-  volume =       "",
-  number =       "",
-  pages =        "",
-  year =         "2011",
+  journal =      "Phys. Rev. B",
+  month =        aug,
+  URL =          "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
+  publisher =    "American Physical Society",
   author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
                  K. N. Lindner and W. G. Schmidt and E. Rauls",
+  title =        "Combined \textit{ab initio} and classical potential
+                 simulation study on silicon carbide precipitation in
+                 silicon",
+  year =         "2011",
+  pages =        "064126",
+  numpages =     "18",
+  volume =       "84",
+  doi =          "10.1103/PhysRevB.84.064126",
+  issue =        "6",
   abstract =     "Atomistic simulations on the silicon carbide
                  precipitation in bulk silicon employing both, classical
                  potential and first-principles methods are presented.
@@ -1721,6 +1738,22 @@
   notes =        "c int diffusion barrier",
 }
 
+@Article{haeberlen10,
+  title =        "Structural characterization of cubic and hexagonal
+                 Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
+  journal =      "Journal of Crystal Growth",
+  volume =       "312",
+  number =       "6",
+  pages =        "762--769",
+  year =         "2010",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "10.1016/j.jcrysgro.2009.12.048",
+  URL =          "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
+  author =       "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
+                 K. N. Lindner and B. Stritzker",
+}
+
 @Article{ito04,
   title =        "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
                  application in buffer layer for Ga{N} epitaxial
@@ -3433,7 +3466,7 @@
 }
 
 @Article{parcas_md,
-  title =        "{PARCAS} molecular dynamics code",
+  journal =      "{PARCAS} molecular dynamics code",
   author =       "K. Nordlund",
   year =         "2008",
 }
@@ -3995,7 +4028,6 @@
   title =        "The Fitting of Pseudopotentials to Experimental Data
                  and Their Subsequent Application",
   editor =       "Frederick Seitz Henry Ehrenreich and David Turnbull",
-  booktitle =    "",
   publisher =    "Academic Press",
   year =         "1970",
   volume =       "24",