X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=fe532d22fb55c995d66a6e5be0f258e84f84cef2;hb=c1149864c4cca20d9d017562b97bde964ecb52d1;hp=c98683febc3f028bddd741c72ea1bcaf83f3f30f;hpb=8fe6107dd7386705bd4a8b96d634cf1e8ee90659;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index c98683f..fe532d2 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1535,15 +1535,21 @@ } @Article{zirkelbach11, - title = "Combined ab initio and classical potential simulation - study on the silicon carbide precipitation in silicon", - journal = "accepted for publication in Phys. Rev. B", - volume = "", - number = "", - pages = "", - year = "2011", + journal = "Phys. Rev. B", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126", + publisher = "American Physical Society", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. K. N. Lindner and W. G. Schmidt and E. Rauls", + title = "Combined \textit{ab initio} and classical potential + simulation study on silicon carbide precipitation in + silicon", + year = "2011", + pages = "064126", + numpages = "18", + volume = "84", + doi = "10.1103/PhysRevB.84.064126", + issue = "6", abstract = "Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and first-principles methods are presented. @@ -1732,6 +1738,22 @@ notes = "c int diffusion barrier", } +@Article{haeberlen10, + title = "Structural characterization of cubic and hexagonal + Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si", + journal = "Journal of Crystal Growth", + volume = "312", + number = "6", + pages = "762--769", + year = "2010", + note = "", + ISSN = "0022-0248", + doi = "10.1016/j.jcrysgro.2009.12.048", + URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452", + author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J. + K. N. Lindner and B. Stritzker", +} + @Article{ito04, title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial @@ -3444,7 +3466,7 @@ } @Article{parcas_md, - title = "{PARCAS} molecular dynamics code", + journal = "{PARCAS} molecular dynamics code", author = "K. Nordlund", year = "2008", } @@ -4006,7 +4028,6 @@ title = "The Fitting of Pseudopotentials to Experimental Data and Their Subsequent Application", editor = "Frederick Seitz Henry Ehrenreich and David Turnbull", - booktitle = "", publisher = "Academic Press", year = "1970", volume = "24",