X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=nlsop%2Fnlsop_emrs_2004.tex;h=fb0653d113f1f5d74c9f44c4d2a97685599e8e8a;hb=99cad9238e35ba9cf38118378219eabbdb7cef39;hp=f04ee05de29b7e7f9c191799bda2978eff2f3baf;hpb=638a820be3a424747d3f51355cb3d7602b4bcc0a;p=lectures%2Flatex.git

diff --git a/nlsop/nlsop_emrs_2004.tex b/nlsop/nlsop_emrs_2004.tex
index f04ee05..fb0653d 100644
--- a/nlsop/nlsop_emrs_2004.tex
+++ b/nlsop/nlsop_emrs_2004.tex
@@ -62,7 +62,7 @@ Formation of nanometric selforganized ordered amorphous lamella precipitates is
 \newpage
 
 \section{Model}
-A model describing the formation of nanometric selforganized ordered amorphous $SiC_x$ inclusions with increasing dose was introduced in \cite{1}. Figure \ref{1} shows the evolution into ordered lamellae with increasing dose.
+A model describing the formation of nanometric selforganized ordered amorphous $SiC_x$ inclusions was introduced in \cite{1}. Figure \ref{1} shows the evolution into ordered lamellae with increasing dose.
 
 %\begin{figure}[!h]
 %\begin{center}
@@ -76,7 +76,7 @@ As a result of the supersaturation of carbon atoms in silicon there is a nucleat
 \newpage
 
 \section{Simulation}
-Before discussing the implementation some assumptions and approximations have to be done. Figure \ref{2} shows the stopping powers and carbon concentration profile calculated by TRIM. The depth region we are interested in is between $0-300 \, nm$, the region between surface of the target and start of the continued amorphous $SiC_x$ layer (from now on called simulation window), where the nuclear stopping power and the implantation profile can be approximated by a linear function of depth. Furthermore the probability of amorphization is assumed to be proportional to the nuclear stopping power. A local probability of amorphization somewhere in the target is composed of three parts, the ballistic, carbon-induced and stress-induced amorphization. The ballistic amorphization is proportional to the nuclear stopping power, as mentioned before. the carbon-induced amorphization is a linear function of the local carbon concentration. the stress-induced amorphization is proportional to the compressive stress apllied by the amorphous neighbours. Thus the probability of a crystalline volume getting amorphous can be calculated as follows,
+Before discussing the implementation some assumptions and approximations have to be done. Figure \ref{2} shows the stopping powers and carbon concentration profile calculated by TRIM. The depth region we are interested in is between $0-300 \, nm$, the region between surface of the target and start of the continuous amorphous $SiC_x$ layer (from now on called simulation window), where the nuclear stopping power and the implantation profile can be approximated by a linear function of depth. Furthermore the probability of amorphization is assumed to be proportional to the nuclear stopping power. A local probability of amorphization somewhere in the target is composed of three parts, the ballistic, carbon-induced and stress-induced amorphization. The ballistic amorphization is proportional to the nuclear stopping power, as mentioned before. the carbon-induced amorphization is a linear function of the local carbon concentration. the stress-induced amorphization is proportional to the compressive stress apllied by the amorphous neighbours. Thus the probability of a crystalline volume getting amorphous can be calculated as follows,
 \[
  p_{c \rightarrow a} = b_{ap} + a_{cp} \times c^{local}_{carbon} + \sum_{amorphous \,  neighbours} \frac{a_{ap} \times c_{carbon}}{distance^2}
 \]
@@ -90,6 +90,8 @@ After that random coordinates according to the implantation profile are obtained
 
 Finally a standard diffusion algorithm is started, so the supersaturation of carbon in the crystalline volumes can be reduced. This process adds a few simulation paramters, the diffusion velocity, the diffusion rate and a switch whether to do diffusion in $z$-direction or not.
 
+\newpage
+
 \section{Results}
 
 \section{Conclusion}