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+\begin{document}
+
+% header
+\begin{center}
+ {\LARGE {\bf Molecular dynamics simulation
+              of defect formation and precipitation
+	      in heavily carbon doped silicon.
+              }\\}
+ \vspace{16pt}
+ \textsc{\Large \underline{F. Zirkelbach}$^1$, J. K. N. Lindner$^1$,
+         K. Nordlund$^2$, B. Stritzker$^1$}\\
+ \vspace{16pt}
+ $^1$ Experimentalphysik IV, Institut f"ur Physik, Universit"at Augsburg,\\
+ Universit"atsstr. 1, D-86135 Augsburg, Germany\\
+ \vspace{16pt}
+ $^2$ Accelerator Laboratory, Department of Physical Sciences,
+ University of Helsinki,\\
+ Pietari Kalmink. 2, 00014 Helsinki, Finland\\
+\end{center}
+
+\vspace{24pt}
+
+\section*{Abstract}
+The precipitation process of silicon carbide in heavily carbon doped silicon is not yet understood for the most part.
+High resolution transmission electron microscopy indicates that in a first step carbon atoms form $C-Si$ dumbbells on regular $Si$ lattice sites which agglomerate into large clusters.
+In a second step, when the cluster size reaches a radius of a few $nm$, the high interfacial energy due to the $SiC$/$Si$ lattice misfit of almost $20 \, \%$ is overcome and the precipitation occurs.
+By simulation details of the precipitation process can be obtained on the atomic level.
+A newly parametrized Tersoff like bond-order potential is used to model the system appropriately.
+First results gained by molecular dynamics simulations using this potential are presented.
+The influence of the amount and placement of inserted carbon atoms on the defect formation and structural changes is discussed.
+Furthermore a minimal carbon concentration necessary for precipitation is examined by simulation.
+
+\end{document}