X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Ftalks%2Fdpg_2008.tex;h=19160834ea90aa910908e9e91b28ca9345692224;hb=98c76e01bb29054abe6f0a8e359c15339acec152;hp=fd70c5eded3b9533fb73d0e3266065c6040e1d53;hpb=227b7567efc97a86ace039696f547d68e809e86d;p=lectures%2Flatex.git diff --git a/posic/talks/dpg_2008.tex b/posic/talks/dpg_2008.tex index fd70c5e..1916083 100644 --- a/posic/talks/dpg_2008.tex +++ b/posic/talks/dpg_2008.tex @@ -20,8 +20,8 @@ \usepackage{pstricks} \usepackage{pst-node} -\usepackage{epic} -\usepackage{eepic} +%\usepackage{epic} +%\usepackage{eepic} \usepackage{graphicx} \graphicspath{{../img/}} @@ -152,13 +152,14 @@ \item {\color{orange}fcc} $+$ \item {\color{gray}fcc shifted $1/4$ of volume diagonal} \end{itemize} - \item Lattice constants: $4a_{Si}\approx5a_{SiC}$ + \item Lattice constants: + \[ + 4a_{Si}\approx5a_{SiC} + \] \item Silicon density: \[ - \frac{n_{SiC}}{n_{Si}}= - \frac{4/a_{SiC}^3}{8/a_{Si}^3}= - \frac{5^3}{2\cdot4^3}={\color{cyan}97,66}\,\% - \] + \frac{n_{SiC}}{n_{Si}}=97,66\,\% + \] \end{itemize} \end{minipage} \hspace{8pt} @@ -213,7 +214,7 @@ Experimentally observed: \begin{itemize} \item Minimal diameter of precipitation: 4 - 5 nm - \item (hkl)-planes identical for Si and SiC + \item Equal orientation of Si and SiC (hkl)-planes \end{itemize} \end{slide} @@ -458,13 +459,37 @@ Very first results of the SiC precipitation experiments } - \begin{minipage}[t]{6.3cm} - %\includegraphics[width=6.0cm]{../plot/sic_prec_energy.ps} - %\includegraphics[width=6.0cm]{../plot/sic_prec_temp.ps} + \footnotesize + + \begin{minipage}[b]{6.9cm} + \includegraphics[width=6.3cm]{../plot/sic_prec_energy.ps} + \includegraphics[width=6.3cm]{../plot/sic_prec_temp.ps} \end{minipage} - \begin{minipage}[c]{12.5cm} - \includegraphics[height=5.0cm]{../plot/sic_pc.ps} - \includegraphics[height=4.0cm]{sic_si-c-n.eps} + \begin{minipage}[b]{5.5cm} + \begin{itemize} + \item {\color{red} Total simulation volume} + \item {\color{green} Volume of minimal SiC precipitation} + \item {\color{blue} Volume of necessary amount of Si} + \end{itemize} + \vspace{40pt} + \includegraphics[width=6.3cm]{../plot/foo150.ps} + \end{minipage} + +\end{slide} + +\begin{slide} + + {\large\bf + Very first results of the SiC precipitation experiments + } + + \begin{minipage}[t]{6.9cm} + \includegraphics[width=6.3cm]{../plot/sic_pc.ps} + \includegraphics[width=6.3cm]{../plot/foo_end.ps} + \hspace{12pt} + \end{minipage} + \begin{minipage}[c]{5.5cm} + \includegraphics[width=6.0cm]{sic_si-c-n.eps} \end{minipage} \end{slide} @@ -478,17 +503,16 @@ \vspace{24pt} \begin{itemize} - \item Importance of understanding C in Si + \item Importance of understanding the SiC precipitation mechanism \item Interstitial configurations in silicon using the Albe potential \item Indication of SiC precipitation \end{itemize} -\vspace{16pt} +\vspace{24pt} \begin{itemize} \item Displacement and stress calculations - \item Diffusion dependence of temperature and carbon concentration - \item Analyzing results of the precipitation simulation runs + \item Refinement of simulation sequence to create 3C-SiC \item Analyzing self-designed Si/SiC interface \end{itemize}