X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Ftalks%2Fmpi_app.tex;h=27a048cd7f010dc5bda01bdfa371e0c0b79e889a;hb=04db9a9e98884d0da3a895d3be58e7f8a85f139c;hp=fedd211a2bd416d7bfb619bbcb4a5a1411e842ff;hpb=6ace91a54c471d1cfe9703253a58ca06d52898bb;p=lectures%2Flatex.git

diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex
index fedd211..27a048c 100644
--- a/posic/talks/mpi_app.tex
+++ b/posic/talks/mpi_app.tex
@@ -20,6 +20,7 @@
 
 \usepackage{pstricks}
 \usepackage{pst-node}
+\usepackage{pst-grad}
 
 %\usepackage{epic}
 %\usepackage{eepic}
@@ -54,6 +55,28 @@
 
 \usepackage{upgreek}
 
+\newcommand{\headdiplom}{
+\begin{pspicture}(0,0)(0,0)
+\rput(6.0,0.2){\psframebox[fillstyle=gradient,gradbegin=red,gradend=white,gradlines=1000,gradmidpoint=1,linestyle=none]{
+\begin{minipage}{14cm}
+\hfill
+\vspace{0.7cm}
+\end{minipage}
+}}
+\end{pspicture}
+}
+
+\newcommand{\headphd}{
+\begin{pspicture}(0,0)(0,0)
+\rput(6.0,0.2){\psframebox[fillstyle=gradient,gradbegin=blue,gradend=white,gradlines=1000,gradmidpoint=1,linestyle=none]{
+\begin{minipage}{14cm}
+\hfill
+\vspace{0.7cm}
+\end{minipage}
+}}
+\end{pspicture}
+}
+
 \begin{document}
 
 \extraslideheight{10in}
@@ -146,7 +169,7 @@ E\\
 % no vertical centering
 \centerslidesfalse
 
-%\ifnum1=0
+\ifnum1=0
 
 % intro
 
@@ -403,18 +426,18 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 \end{center}
 
 \begin{pspicture}(0,0)(0,0)
-\rput(6.0,7.0){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{
+\rput(6.0,7.0){\rnode{init}{\psframebox[fillstyle=gradient,gradbegin=red,gradend=white,gradlines=1000,gradmidpoint=1.0,linestyle=none]{
 \begin{minipage}{11cm}
-{\color{red}Diploma thesis}\\
+{\color{black}Diploma thesis}\\
  \underline{Monte Carlo} simulation modeling the selforganization process\\
  leading to periodic arrays of nanometric amorphous SiC precipitates
 \end{minipage}
 }}}
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\rput(6.0,-0.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{
+\rput(6.0,-0.5){\rnode{init}{\psframebox[fillstyle=gradient,gradbegin=blue,gradend=white,gradmidpoint=1.0,gradlines=1000,linestyle=none]{
 \begin{minipage}{11cm}
-{\color{blue}Doctoral studies}\\
+{\color{black}Doctoral studies}\\
  Classical potential \underline{molecular dynamics} simulations \ldots\\
  \underline{Density functional theory} calculations \ldots\\[0.2cm]
  \ldots on defect formation and SiC precipitation in Si
@@ -432,6 +455,7 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 
 \begin{slide}
 
+\headdiplom
 {\large\bf
  Selforganization of nanometric amorphous SiC lamellae
 }
@@ -453,7 +477,8 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 \begin{minipage}{12cm}
 \includegraphics[width=9cm]{../../nlsop/img/k393abild1_e_l.eps}\\
 {\scriptsize
-XTEM bright-field, \unit[180]{keV} C$^+ \rightarrow$ Si, \degc{150},
+XTEM bright-field, \unit[180]{keV} C$^+ \rightarrow$ Si,
+{\color{red}\underline{\degc{150}}},
 Dose: \unit[4.3 $\times 10^{17}$]{cm$^{-2}$}
 }
 \end{minipage}
@@ -473,6 +498,7 @@ XTEM bright-field and respective EFTEM C map
 
 \begin{slide}
 
+\headdiplom
 {\large\bf
  Model displaying the formation of ordered lamellae
 }
@@ -509,6 +535,7 @@ XTEM bright-field and respective EFTEM C map
 
 \begin{slide}
 
+\headdiplom
 {\large\bf
  Implementation of the Monte Carlo code
 }
@@ -554,38 +581,46 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
 \begin{slide}
 
 \begin{minipage}{3.7cm}
+\begin{pspicture}(0,0)(0,0)
+\rput(1.7,0.2){\psframebox[fillstyle=gradient,gradbegin=red,gradend=white,gradlines=1000,gradangle=10,gradmidpoint=1,linestyle=none]{
+\begin{minipage}{3.7cm}
+\hfill
+\vspace{0.7cm}
+\end{minipage}
+}}
+\end{pspicture}
 {\large\bf
  Results
 }
 
 \footnotesize
 
-\vspace{1.0cm}
+\vspace{1.2cm}
 
 Evolution of the \ldots
 \begin{itemize}
  \item continuous\\
        amorphous layer
  \item a/c interface
- \item lamella precipitates
+ \item lamellar precipitates
 \end{itemize}
-\ldots reproduced!\\[1.5cm]
+\ldots reproduced!\\[1.4cm]
 
 {\color{blue}
 \begin{center}
 Experiment \& simulation\\
 in good agreement\\[1.0cm]
 
-Simulation is able to model the whole depth region\\[1.0cm]
+Simulation is able to model the whole depth region\\[1.2cm]
 \end{center}
 }
 
 \end{minipage}
-\begin{minipage}{0.4cm}
+\begin{minipage}{0.5cm}
 \vfill
 \end{minipage}
 \begin{minipage}{8.0cm}
- \vspace{-0.2cm}
+ \vspace{-0.3cm}
  \includegraphics[width=9cm]{../../nlsop/img/dosis_entwicklung_ng_e_1-2.eps}\\
  \includegraphics[width=9cm]{../../nlsop/img/dosis_entwicklung_ng_e2_2-2.eps}
 \end{minipage}
@@ -594,6 +629,7 @@ Simulation is able to model the whole depth region\\[1.0cm]
 
 \begin{slide}
 
+\headdiplom
 {\large\bf
  Structural \& compositional details
 }
@@ -618,7 +654,7 @@ Simulation is able to model the whole depth region\\[1.0cm]
  \item C accumulation in the amorphous phase / Origin of stress
 \end{itemize}
 
-\begin{picture}(0,0)(-265,-30)
+\begin{picture}(0,0)(-260,-50)
 \framebox{
 \begin{minipage}{3cm}
 \begin{center}
@@ -634,37 +670,84 @@ by simulation!
 
 \end{slide}
 
-
-\end{document}
-
-% continue here
 \fi
 
-\ifnum1=0
-
 \begin{slide}
 
+\headphd
 {\large\bf
- Model displaying the formation of ordered lamellae
+ Formation of epitaxial single crystalline 3C-SiC
 }
 
-\framebox{
- \begin{minipage}{6.3cm}
+\footnotesize
+
+\vspace{0.2cm}
+
+\begin{center}
+\begin{itemize}
+ \item \underline{Implantation step 1}\\[0.1cm]
+        Almost stoichiometric dose | \unit[180]{keV} | \degc{500}\\
+        $\Rightarrow$ Epitaxial {\color{blue}3C-SiC} layer \&
+        {\color{blue}precipitates}
+ \item \underline{Implantation step 2}\\[0.1cm]
+        Little remaining dose | \unit[180]{keV} | \degc{250}\\
+        $\Rightarrow$
+        Destruction/Amorphization of precipitates at layer interface
+ \item \underline{Annealing}\\[0.1cm]
+       \unit[10]{h} at \degc{1250}\\
+       $\Rightarrow$ Homogeneous 3C-SiC layer with sharp interfaces
+\end{itemize}
+\end{center}
+
+\begin{minipage}{7cm}
+\includegraphics[width=7cm]{ibs_3c-sic.eps}
+\end{minipage}
+\begin{minipage}{5cm}
+\begin{pspicture}(0,0)(0,0)
+\rnode{box}{
+\psframebox[fillstyle=solid,fillcolor=white,linecolor=blue,linestyle=solid]{
+\begin{minipage}{5.3cm}
  \begin{center}
  {\color{blue}
-  Precipitation mechanism not yet fully understood!
+  3C-SiC precipitation\\
+  not yet fully understood
  }
+ \end{center}
+ \vspace*{0.1cm}
  \renewcommand\labelitemi{$\Rightarrow$}
- \small
- \underline{Understanding the SiC precipitation}
+ Details of the SiC precipitation
  \begin{itemize}
-  \item significant technological progress in SiC thin film formation
-  \item perspectives for processes relying upon prevention of SiC precipitation
+  \item significant technological progress\\
+        in SiC thin film formation
+  \item perspectives for processes relying\\
+        upon prevention of SiC precipitation
  \end{itemize}
- \end{center}
- \end{minipage}
+\end{minipage}
+}}
+\rput(-6.8,5.4){\pnode{h0}}
+\rput(-3.0,5.4){\pnode{h1}}
+\ncline[linecolor=blue]{-}{h0}{h1}
+\ncline[linecolor=blue]{->}{h1}{box}
+\end{pspicture}
+\end{minipage}
+
+\end{slide}
+
+
+\end{document}
+
+\ifnum1=0
+
+% continue here
+%\fi
+
+\begin{slide}
+
+{\large\bf
+ Model displaying the formation of ordered lamellae
 }
 
+
 \end{slide}
 
 \begin{slide}