X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Ftalks%2Fmpi_app.tex;h=f588e1d46a4248e8e52a74e2bfb1f30e89ac949f;hb=246b317e6fcfc986641a3c20cf8722f40ae131ac;hp=27a048cd7f010dc5bda01bdfa371e0c0b79e889a;hpb=04db9a9e98884d0da3a895d3be58e7f8a85f139c;p=lectures%2Flatex.git diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex index 27a048c..f588e1d 100644 --- a/posic/talks/mpi_app.tex +++ b/posic/talks/mpi_app.tex @@ -7,6 +7,7 @@ \usepackage[latin1]{inputenc} \usepackage[T1]{fontenc} \usepackage{amsmath} +\usepackage{stmaryrd} \usepackage{latexsym} \usepackage{ae} @@ -670,8 +671,6 @@ by simulation! \end{slide} -\fi - \begin{slide} \headphd @@ -733,66 +732,69 @@ by simulation! \end{slide} - -\end{document} - -\ifnum1=0 - -% continue here -%\fi - \begin{slide} +\headphd {\large\bf - Model displaying the formation of ordered lamellae -} - - -\end{slide} - -\begin{slide} - - {\large\bf Supposed precipitation mechanism of SiC in Si - } +} \scriptsize \vspace{0.1cm} - \begin{minipage}{3.8cm} - Si \& SiC lattice structure\\[0.2cm] - \includegraphics[width=3.5cm]{sic_unit_cell.eps}\\[-0.3cm] - \hrule + \framebox{ + \begin{minipage}{3.6cm} + \begin{center} + Si \& SiC lattice structure\\[0.1cm] + \includegraphics[width=2.3cm]{sic_unit_cell.eps} + \end{center} +{\tiny + \begin{minipage}{1.7cm} +\underline{Silicon}\\ +{\color{yellow}$\bullet$} Si | {\color{gray}$\bullet$} Si\\ +$a=\unit[5.429]{\\A}$\\ +$\rho^*_{\text{Si}}=\unit[100]{\%}$ + \end{minipage} + \begin{minipage}{1.7cm} +\underline{Silicon carbide}\\ +{\color{yellow}$\bullet$} Si | {\color{gray}$\bullet$} C\\ +$a=\unit[4.359]{\\A}$\\ +$\rho^*_{\text{Si}}=\unit[97]{\%}$ + \end{minipage} +} \end{minipage} - \hspace{0.6cm} - \begin{minipage}{3.8cm} + } + \hspace{0.1cm} + \begin{minipage}{4.1cm} \begin{center} \includegraphics[width=3.3cm]{tem_c-si-db.eps} \end{center} \end{minipage} - \hspace{0.6cm} - \begin{minipage}{3.8cm} + \hspace{0.1cm} + \begin{minipage}{4.0cm} \begin{center} \includegraphics[width=3.3cm]{tem_3c-sic.eps} \end{center} \end{minipage} - \begin{minipage}{4cm} + \vspace{0.1cm} + + \begin{minipage}{4.0cm} \begin{center} C-Si dimers (dumbbells)\\[-0.1cm] on Si interstitial sites \end{center} \end{minipage} - \hspace{0.2cm} - \begin{minipage}{4.2cm} + \hspace{0.1cm} + \begin{minipage}{4.1cm} \begin{center} Agglomeration of C-Si dumbbells\\[-0.1cm] $\Rightarrow$ dark contrasts \end{center} \end{minipage} - \hspace{0.2cm} - \begin{minipage}{4cm} + \hspace{0.1cm} + \begin{minipage}{4.0cm} \begin{center} Precipitation of 3C-SiC in Si\\[-0.1cm] $\Rightarrow$ Moir\'e fringes\\[-0.1cm] @@ -800,37 +802,39 @@ by simulation! \end{center} \end{minipage} - \begin{minipage}{3.8cm} + \vspace{0.1cm} + + \begin{minipage}{4.0cm} \begin{center} \includegraphics[width=3.3cm]{sic_prec_seq_01.eps} \end{center} \end{minipage} - \hspace{0.6cm} - \begin{minipage}{3.8cm} + \hspace{0.1cm} + \begin{minipage}{4.1cm} \begin{center} \includegraphics[width=3.3cm]{sic_prec_seq_02.eps} \end{center} \end{minipage} - \hspace{0.6cm} - \begin{minipage}{3.8cm} + \hspace{0.1cm} + \begin{minipage}{4.0cm} \begin{center} \includegraphics[width=3.3cm]{sic_prec_seq_03.eps} \end{center} \end{minipage} \begin{pspicture}(0,0)(0,0) -\psline[linewidth=4pt]{->}(8.5,2)(9.0,2) -\psellipse[linecolor=blue](11.5,5.8)(0.3,0.5) -\rput{-20}{\psellipse[linecolor=blue](3.3,8.1)(0.3,0.5)} -\psline[linewidth=4pt]{->}(4.0,2)(4.5,2) -\rput(12.7,0.3){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ +\psline[linewidth=2pt]{->}(8.3,2)(8.8,2) +\psellipse[linecolor=blue](11.1,6.0)(0.3,0.5) +\rput{-20}{\psellipse[linecolor=blue](3.1,8.2)(0.3,0.5)} +\psline[linewidth=2pt]{->}(3.9,2)(4.4,2) +\rput(11.8,0.3){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ $4a_{\text{Si}}=5a_{\text{SiC}}$ }}} -\rput(12.2,8){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ +\rput(11.5,8){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ \hkl(h k l) planes match }}} -\rput(9.7,6.2){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ -r = 2 - 4 nm +\rput(8.5,6.2){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ +r = \unit[2--4]{nm} }}} \end{pspicture} @@ -838,47 +842,67 @@ r = 2 - 4 nm \begin{slide} - {\large\bf - Supposed precipitation mechanism of SiC in Si - } +\headphd +{\large\bf + Supposed precipitation mechanism of SiC in Si +} \scriptsize \vspace{0.1cm} - \begin{minipage}{3.8cm} - Si \& SiC lattice structure\\[0.2cm] - \includegraphics[width=3.5cm]{sic_unit_cell.eps}\\[-0.3cm] - \hrule + \framebox{ + \begin{minipage}{3.6cm} + \begin{center} + Si \& SiC lattice structure\\[0.1cm] + \includegraphics[width=2.3cm]{sic_unit_cell.eps} + \end{center} +{\tiny + \begin{minipage}{1.7cm} +\underline{Silicon}\\ +{\color{yellow}$\bullet$} Si | {\color{gray}$\bullet$} Si\\ +$a=\unit[5.429]{\\A}$\\ +$\rho^*_{\text{Si}}=\unit[100]{\%}$ + \end{minipage} + \begin{minipage}{1.7cm} +\underline{Silicon carbide}\\ +{\color{yellow}$\bullet$} Si | {\color{gray}$\bullet$} C\\ +$a=\unit[4.359]{\\A}$\\ +$\rho^*_{\text{Si}}=\unit[97]{\%}$ + \end{minipage} +} \end{minipage} - \hspace{0.6cm} - \begin{minipage}{3.8cm} + } + \hspace{0.1cm} + \begin{minipage}{4.1cm} \begin{center} \includegraphics[width=3.3cm]{tem_c-si-db.eps} \end{center} \end{minipage} - \hspace{0.6cm} - \begin{minipage}{3.8cm} + \hspace{0.1cm} + \begin{minipage}{4.0cm} \begin{center} \includegraphics[width=3.3cm]{tem_3c-sic.eps} \end{center} \end{minipage} - \begin{minipage}{4cm} + \vspace{0.1cm} + + \begin{minipage}{4.0cm} \begin{center} C-Si dimers (dumbbells)\\[-0.1cm] on Si interstitial sites \end{center} \end{minipage} - \hspace{0.2cm} - \begin{minipage}{4.2cm} + \hspace{0.1cm} + \begin{minipage}{4.1cm} \begin{center} Agglomeration of C-Si dumbbells\\[-0.1cm] $\Rightarrow$ dark contrasts \end{center} \end{minipage} - \hspace{0.2cm} - \begin{minipage}{4cm} + \hspace{0.1cm} + \begin{minipage}{4.0cm} \begin{center} Precipitation of 3C-SiC in Si\\[-0.1cm] $\Rightarrow$ Moir\'e fringes\\[-0.1cm] @@ -886,118 +910,181 @@ r = 2 - 4 nm \end{center} \end{minipage} - \begin{minipage}{3.8cm} + \vspace{0.1cm} + + \begin{minipage}{4.0cm} \begin{center} \includegraphics[width=3.3cm]{sic_prec_seq_01.eps} \end{center} \end{minipage} - \hspace{0.6cm} - \begin{minipage}{3.8cm} + \hspace{0.1cm} + \begin{minipage}{4.1cm} \begin{center} \includegraphics[width=3.3cm]{sic_prec_seq_02.eps} \end{center} \end{minipage} - \hspace{0.6cm} - \begin{minipage}{3.8cm} + \hspace{0.1cm} + \begin{minipage}{4.0cm} \begin{center} \includegraphics[width=3.3cm]{sic_prec_seq_03.eps} \end{center} \end{minipage} \begin{pspicture}(0,0)(0,0) -\psline[linewidth=4pt]{->}(8.5,2)(9.0,2) -\psellipse[linecolor=blue](11.5,5.8)(0.3,0.5) -\rput{-20}{\psellipse[linecolor=blue](3.3,8.1)(0.3,0.5)} -\psline[linewidth=4pt]{->}(4.0,2)(4.5,2) -\rput(12.7,0.3){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ +\psline[linewidth=2pt]{->}(8.3,2)(8.8,2) +\psellipse[linecolor=blue](11.1,6.0)(0.3,0.5) +\rput{-20}{\psellipse[linecolor=blue](3.1,8.2)(0.3,0.5)} +\psline[linewidth=2pt]{->}(3.9,2)(4.4,2) +\rput(11.8,0.3){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ $4a_{\text{Si}}=5a_{\text{SiC}}$ }}} -\rput(12.2,8){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ +\rput(11.5,8){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ \hkl(h k l) planes match }}} -\rput(9.7,6.2){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ -r = 2 - 4 nm +\rput(8.5,6.2){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{ +r = \unit[2--4]{nm} }}} -\rput(6.7,5.2){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{ +% controversial view! +\rput(6.5,5.0){\psframebox[fillstyle=solid,opacity=0.5,fillcolor=black]{ +\begin{minipage}{14cm} +\hfill +\vspace{12cm} +\end{minipage} +}} +\rput(6.5,5.3){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white,linewidth=0.1cm]{ \begin{minipage}{10cm} \small -{\color{red}\bf Controversial views} +\vspace*{0.2cm} +\begin{center} +{\color{gray}\bf Controversial findings} +\end{center} \begin{itemize} -\item Implantations at high T (Nejim et al.) +\item High-temperature implantation {\tiny\color{gray}/Nejim~et~al./} \begin{itemize} - \item Topotactic transformation based on \cs - \item \si{} as supply reacting with further C in cleared volume + \item C incorporated {\color{blue}substitutionally} on regular Si lattice sites + \item \si{} reacting with further C in cleared volume \end{itemize} -\item Annealing behavior (Serre et al.) +\item Annealing behavior {\tiny\color{gray}/Serre~et~al./} \begin{itemize} - \item Room temperature implants $\rightarrow$ highly mobile C - \item Elevated T implants $\rightarrow$ no/low C redistribution/migration\\ - (indicate stable \cs{} configurations) + \item Room temperature implantation $\rightarrow$ high C diffusion + \item Elevated temperature implantation $\rightarrow$ no C redistribution \end{itemize} + $\Rightarrow$ mobile {\color{red}\ci} opposed to + stable {\color{blue}\cs{}} configurations \item Strained silicon \& Si/SiC heterostructures + {\tiny\color{gray}/Strane~et~al./Guedj~et~al./} \begin{itemize} - \item Coherent SiC precipitates (tensile strain) + \item {\color{blue}Coherent} SiC precipitates (tensile strain) \item Incoherent SiC (strain relaxation) \end{itemize} \end{itemize} +\vspace{0.1cm} +\begin{center} +{\Huge${\lightning}$} \hspace{0.3cm} +{\color{blue}\cs{}} --- vs --- {\color{red}\ci} \hspace{0.3cm} +{\Huge${\lightning}$} +\end{center} +\vspace{0.2cm} \end{minipage} }}} \end{pspicture} \end{slide} +% continue here +\fi + \begin{slide} - {\large\bf - Molecular dynamics (MD) simulations - } +\headphd +{\large\bf + Utilized computational methods +} - \vspace{12pt} +\vspace{0.2cm} - \small +\small - {\bf MD basics:} - \begin{itemize} - \item Microscopic description of N particle system - \item Analytical interaction potential - \item Numerical integration using Newtons equation of motion\\ - as a propagation rule in 6N-dimensional phase space - \item Observables obtained by time and/or ensemble averages - \end{itemize} - {\bf Details of the simulation:} - \begin{itemize} - \item Integration: Velocity Verlet, timestep: $1\text{ fs}$ - \item Ensemble: NpT (isothermal-isobaric) - \begin{itemize} - \item Berendsen thermostat: - $\tau_{\text{T}}=100\text{ fs}$ - \item Berendsen barostat:\\ - $\tau_{\text{P}}=100\text{ fs}$, - $\beta^{-1}=100\text{ GPa}$ - \end{itemize} - \item Erhart/Albe potential: Tersoff-like bond order potential - \vspace*{12pt} - \[ - E = \frac{1}{2} \sum_{i \neq j} \pot_{ij}, \quad - \pot_{ij} = {\color{red}f_C(r_{ij})} - \left[ f_R(r_{ij}) + {\color{blue}b_{ij}} f_A(r_{ij}) \right] - \] - \end{itemize} +{\bf Molecular dynamics (MD)}\\ +\scriptsize +\begin{tabular}{p{4.5cm} p{7.5cm}} +%\hline +Basics & Details\\ +\hline +System of $N$ particles & +$N=5832\pm 1$ (Defects), $N=238328+6000$ (Precipitation)\\ +\hline +Phase space propagation & +Velocity Verlet | timestep: \unit[1]{fs} \\ +\hline +Analytical interaction potential & +Tersoff-like {\color{red}short-range}, {\color{blue}bond order} potential +(Erhart/Albe) +$\displaystyle +E = \frac{1}{2} \sum_{i \neq j} \pot_{ij}, \quad + \pot_{ij} = {\color{red}f_C(r_{ij})} + \left[ f_R(r_{ij}) + {\color{blue}b_{ij}} f_A(r_{ij}) \right] +$\\ +\hline +%\multicolumn{2}{c}{}\\ +Observables: time/ensemble averages & +NpT (isothermal-isobaric) | Berendsen thermostat/barostat\\ +%\begin{itemize} +%\item Berendsen thermostat: +% $\tau_{\text{T}}=100\text{ fs}$ +%\item Berendsen barostat:\\ +% $\tau_{\text{P}}=100\text{ fs}$, +% $\beta^{-1}=100\text{ GPa}$ +%\end{itemize}\\ +\hline +\end{tabular} + +\small + +\vspace{0.1cm} + +{\bf Density functional theory (DFT)} + +\scriptsize + +\begin{minipage}[t]{6cm} +\underline{Basics} +\begin{itemize} + \item Born-Oppenheimer approximation:\\ + Decouple electronic \& ionic motion + \item Hohenberg-Kohn theorem:\\ + $n_0(r) \stackrel{\text{uniquely}}{\rightarrow}$ + $V_0$ / $H$ / $\Phi_i$ / \underline{$E_0$} +\end{itemize} +\underline{Details} +\begin{itemize} +\item Code: \textsc{vasp} +\item Plane wave basis set $\{\phi_j\}$\\[0.1cm] +$\displaystyle +\Phi_i=\sum_{|G+k|