X-Git-Url: https://hackdaworld.org/gitweb/?a=blobdiff_plain;f=posic%2Fthesis%2Fdefects.tex;h=4435c969b552fe668e2276504ff4ddd9602047a6;hb=5a0bd5c3262f68a13c779d098b8dfa4ff171384a;hp=774d5df283ea31ca03baba2a6e2da883092d6f3d;hpb=cf853f22a20e00004c84bfdd1b00718c527ae934;p=lectures%2Flatex.git

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 774d5df..4435c96 100644
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1321,6 +1321,8 @@ In the same way the energetically most unfavorable configuration can be explaine
 The substitutional C is located next to the lattice site shared by the \hkl<1 1 0> Si self-interstitial along the \hkl<1 -1 0> direction.
 Thus, the compressive stress along \hkl<1 1 0> of the Si \hkl<1 1 0> interstitial is not compensated but intensified by the tensile stress of the substitutional C atom, which is no longer loacted along the direction of stress.
 
+{\color{red}Todo: Erhart/Albe calc for most and less favorable configuration!}
+
 {\color{red}Todo: Mig of C-Si DB conf to or from C sub + Si 110 in progress.}
 
 \section{Migration in systems of combined defects}